Silicon nitride i hoʻopaʻa ʻia i ka silikon carbide
ʻO Si3N4 i hoʻopaʻa ʻia ʻo SiC ceramic refractory material, ua hui pū ʻia me ka pauka maikaʻi SIC maʻemaʻe kiʻekiʻe a me ka pauka Silicon, ma hope o ka hoʻoheheʻe ʻana i ka papa, hoʻopili ʻia ka hopena ma lalo o 1400 ~ 1500 ° C.I ka wā o ka sintering, e hoʻopiha ana i ka Nitrogen maʻemaʻe kiʻekiʻe i loko o ka umu, a laila e hana ke silika me ka Nitrogen a hoʻohua iā Si3N4, No laila ʻo Si3N4 i hoʻopaʻa ʻia ʻo SiC mea i haku ʻia me ka silicon nitride (23%) a me ka silicon carbide (75%) ma ke ʻano kumu kumu. , hui pū ʻia me nā mea kūlohelohe, a hoʻohālikelike ʻia e ka hui ʻana, extrusion a ninini paha, a laila hana ʻia ma hope o ka maloʻo ʻana a me ka nitrogenization.
Nā hiʻohiʻona a me nā pono:
1.High mahana hoʻomanawanui
2.High thermal conductivity a me ka haʻalulu kū'ē
3.High ikaika mechanical a me ka abrasion
4.Excellent ikehu pono a me ka corrosion kū'ē
Hāʻawi mākou i nā ʻāpana seramika NSiC kiʻekiʻe a me ka pololei i hana ʻia e
1. Slip hoolei
2.Extruding
3.Uni Axial Pressing
4.Isostatic Pressing
Pepa ʻIke Mea
| >Ka Hui Kemika | ʻO Sic | 75% |
| Si3N4 | ≥23% | |
| Kuokoa Si | 0% | |
| ʻAno nui (g/cm3) | 2.70～2.80 | |
| ʻIke ʻia ka porosity (%) | 12～15 | |
| Piʻo ikaika ma 20 ℃(MPa) | 180～190 | |
| Piʻo ikaika ma 1200 ℃(MPa) | 207 | |
| Piʻo ikaika ma 1350 ℃(MPa) | 210 | |
| Ka ikaika compressive ma 20 ℃(MPa) | 580 | |
| Ka wela wela ma 1200 ℃ (w/mk) | 19.6 | |
| Koefficient hoʻonui wela ma1200 ℃(x 10-6/C) | 4.70 | |
| Ke kū'ē i ka ha'alulu wela | Maikaʻi | |
| Max.wela (℃) | 1600 | |
ʻO WeiTai Energy Technology Co., Ltd. kahi mea hoʻolako alakaʻi o nā seramika semiconductor kiʻekiʻe a ʻo ka mea hana wale nō ma Kina e hiki ke hāʻawi like i ka silicon carbide ceramic maʻemaʻe kiʻekiʻe (ʻoi aku ka Recrystallized SiC) a me ka uhi CVD SiC.Eia kekahi, ua paʻa pū kā mākou hui i nā māla seramika e like me ke alumina, alumini nitride, zirconia, a me ka silicon nitride, etc.
ʻO kā mākou huahana nui e like me: silicon carbide etching disc, silicon carbide boat tow, silicon carbide wafer boat (Photovoltaic & Semiconductor), silicon carbide furnace tube, silicon carbide cantilever hoe, silicon carbide chucks, silicon carbide beam, a me ka CVD SiC coating a me TaC ka uhi ʻana.ʻO nā huahana i hoʻohana nui ʻia i ka semiconductor a me nā ʻoihana photovoltaic, e like me nā mea hana no ka ulu kristal, epitaxy, etching, packaging, coating and diffusion furnaces, etc.
Loaʻa i kā mākou hui nā lako hana piha e like me ka molding, sintering, processing, coating equipment, etc., hiki ke hoʻopau i nā loulou pono āpau o ka hana huahana a loaʻa ka mana kiʻekiʻe o ka maikaʻi o ka huahana;Hiki ke kohoʻia ka papahana hoʻolālā maikaʻi e like me nā pono o ka huahana, e hopena i ka uku haʻahaʻa a me ka hāʻawiʻana i nā mea kūʻai i nā huahana hoʻokūkū;Hiki iā mākou ke hoʻonohonoho maʻalahi a maikaʻi hoʻi i ka hana e pili ana i nā koi hoʻouna kauoha a me ka hui pū me nā ʻōnaehana hoʻokele kauoha pūnaewele, e hāʻawi ana i nā mea kūʻai aku me ka wikiwiki a me ka hōʻoia ʻana i ka manawa hoʻouna.
