Silicon nitride i hoʻopaʻa ʻia i ka silikon carbide
ʻO Si3N4 i hoʻopaʻa ʻia ʻo SiC ceramic refractory material, ua hui pū ʻia me ka pauka maikaʻi SIC maʻemaʻe kiʻekiʻe a me ka pauka Silicon, ma hope o ka hoʻoheheʻe ʻana i ka papa, hoʻopili ʻia ka hopena ma lalo o 1400 ~ 1500 ° C.I ka wā o ka sintering, e hoʻopiha ana i ka Nitrogen maʻemaʻe kiʻekiʻe i loko o ka umu, a laila e hana ke silika me ka Nitrogen a hoʻohua iā Si3N4, No laila ʻo Si3N4 i hoʻopaʻa ʻia ʻo SiC mea i haku ʻia me ka silicon nitride (23%) a me ka silicon carbide (75%) ma ke ʻano kumu kumu. , hui pū ʻia me nā mea kūlohelohe, a hoʻohālikelike ʻia e ka hui ʻana, extrusion a ninini paha, a laila hana ʻia ma hope o ka maloʻo ʻana a me ka nitrogenization.
Nā hiʻohiʻona a me nā pono:
1.High mahana hoʻomanawanui
2.High thermal conductivity a me ka haʻalulu kū'ē
3.High ikaika mechanical a me ka abrasion
4.Excellent ikehu pono a me ka corrosion kū'ē
Hāʻawi mākou i nā ʻāpana seramika NSiC kiʻekiʻe a me ka pololei i hana ʻia e
1. Slip hoolei
2.Extruding
3.Uni Axial Pressing
4.Isostatic Pressing
Pepa ʻIke Mea
>Ka Hui Kemika | ʻO Sic | 75% |
Si3N4 | ≥23% | |
Kuokoa Si | 0% | |
ʻAno nui (g/cm3) | 2.70~2.80 | |
ʻIke ʻia ka porosity (%) | 12~15 | |
Piʻo ikaika ma 20 ℃(MPa) | 180~190 | |
Piʻo ikaika ma 1200 ℃(MPa) | 207 | |
Piʻo ikaika ma 1350 ℃(MPa) | 210 | |
Ka ikaika compressive ma 20 ℃(MPa) | 580 | |
Ka wela wela ma 1200 ℃ (w/mk) | 19.6 | |
Koefficient hoʻonui wela ma1200 ℃(x 10-6/C) | 4.70 | |
Ke kū'ē i ka ha'alulu wela | Maikaʻi | |
Max.wela (℃) | 1600 |