2~6 iniha 4° o waho-koki P-type 4H-SiC substrate

ʻO Semicera's 2~6 inch 4° off-angle P-type 4H-SiC substrates ua hana ʻia e hoʻokō i nā pono ulu o ka mana hana kiʻekiʻe a me nā mea hana RF. ʻO ka 4° off-angle orientation e hōʻoia i ka ulu ʻana o ka epitaxial, e hana ana i kēia substrate i kumu kūpono no ka nui o nā mea semiconductor, me nā MOSFET, IGBT, a me nā diodes.

ʻO kēia 2 ~ 6 iniha 4 ° off-angle P-type 4H-SiC substrate he waiwai waiwai maikaʻi loa, me ka conductivity thermal kiʻekiʻe, ka hana uila maikaʻi loa, a me ke kūpaʻa mechanical. ʻO ka ʻaoʻao o waho e kōkua i ka hōʻemi ʻana i ka micropipe density a hoʻolalelale i nā papa epitaxial, he mea koʻikoʻi ia i ka hoʻomaikaʻi ʻana i ka hana a me ka hilinaʻi o ka mīkini semiconductor hope loa.

ʻO Semicera's 2~6 inch 4° off-angle P-type 4H-SiC substrates i loaʻa i nā anawaena like ʻole, mai ka 2 iniha a 6 iniha, no ka hoʻokō ʻana i nā koi hana ʻokoʻa. Hoʻonohonoho pololei ʻia kā mākou substrates e hāʻawi i nā pae doping like ʻole a me nā hiʻohiʻona kiʻekiʻe kiʻekiʻe, e hōʻoia ana i kēlā me kēia wafer e hoʻokō i nā kikoʻī koʻikoʻi i koi ʻia no nā noi uila holomua.

ʻO ka hoʻokō ʻana o Semicera i ka hana hou a me ka maikaʻi e hōʻoia i kā mākou 2~6 iniha 4 ° off-angle P-type 4H-SiC substrates e hāʻawi i ka hana maʻamau i kahi ākea o nā noi mai ka uila uila a hiki i nā hāmeʻa kiʻekiʻe. Hāʻawi kēia huahana i kahi hopena hilinaʻi no ka hanauna e hiki mai ana o ka ikehu, hana kiʻekiʻe semiconductors, kākoʻo i ka holomua ʻenehana i nā ʻoihana e like me ka automotive, telecommunications, a me ka ikehu hou.