Ka uhi ʻana o CVD SiC
Silicon carbide (SiC) epitaxy
ʻO ka pā epitaxial, e paʻa ana i ka substrate SiC no ka ulu ʻana i ka ʻāpana epitaxial SiC, waiho ʻia i loko o ke keʻena pane a hoʻopili pololei i ka wafer.
ʻO ka hapa hapalua o ka mahina he mea lawe no nā mea ʻē aʻe o ke keʻena hopena o nā lako epitaxy Sic, aʻo ka hapa haʻahaʻa haʻahaʻa e pili ana i ka quartz tube, e hoʻolauna ana i ke kinoea e hoʻohuli i ke kumu susceptor e hoʻololi.hiki ke hoʻopaʻa ʻia i ka wela a hoʻokomo ʻia i loko o ke keʻena pane me ka hoʻopili ʻole ʻana me ka wafer.
ʻO ka epitaxy
ʻO ka pā, e paʻa ana i ka substrate Si no ka ulu ʻana i ka ʻāpana epitaxial Si, waiho ʻia i loko o ke keʻena pane a pili pono i ka wafer.
Aia ke apo preheating ma ke apo o waho o ka pahu substrate Si epitaxial a hoʻohana ʻia no ka calibration a me ka wela.Hoʻokomo ʻia i loko o ke keʻena pane a ʻaʻole pili pono i ka wafer.
He susceptor epitaxial, e paʻa ana i ka substrate Si no ka ulu ʻana i kahi ʻāpana epitaxial Si, waiho ʻia i loko o ke keʻena pane a pili pono i ka wafer.
ʻO ka pahu Epitaxial nā ʻāpana koʻikoʻi i hoʻohana ʻia i nā kaʻina hana semiconductor like ʻole, hoʻohana maʻamau i nā lako MOCVD, me ke kūpaʻa wela maikaʻi loa, ke kūpaʻa kemika a me ke kūpaʻa lole, kūpono loa no ka hoʻohana ʻana i nā kaʻina wela kiʻekiʻe.Hoʻopili ia i nā wafers.
| 重结晶碳化硅物理特性 Nā waiwai kino o Recrystallized Silicon Carbide | |
| 性质 / Waiwai | 典型数值 / Waiwai maʻamau |
| 使用温度 / Mahana hana (°C) | 1600°C (me ka oxygen), 1700°C (hoemi kaiapuni) |
| SiC 含量 / maʻiʻo SiC | > 99.96% |
| 自由 Si 含量 / Maikaʻi manuahi ʻo Si | <0.1% |
| 体积密度 / Māmā nui | 2.60-2.70 g/cm3 |
| 气孔率 / ʻIke ʻia ka porosity | < 16% |
| 抗压强度 / Ka ikaika hoʻoemi | > 600 MPa |
| 常温抗弯强度 / Ka ikaika pelu anu | 80-90 MPa (20°C) |
| 高温抗弯强度 Ka ikaika piko wela | 90-100 MPa (1400°C) |
| 热膨胀系数 / Hoʻonui wela @1500°C | 4.70 10-6/°C |
| 导热系数 / ʻAha wela @1200°C | 23 W/m•K |
| 杨氏模量 / Elastic modulus | 240 GPa |
| 抗热震性 / Ke kū'ē i ka ha'alulu wela | Maikaʻi loa |
| 烧结碳化硅物理特性 Nā waiwai kino o Sintered Silicon Carbide | |
| 性质 / Waiwai | 典型数值 / Waiwai maʻamau |
| 化学成分 / Hui Kemika | SiC>95%, Si<5% |
| 体积密度 / Kū'ē nui | >3.07 g/cm³ |
| 显气孔率 / ʻIke ʻia ka porosity | <0.1% |
| 常温抗弯强度 / Modulus of rupture ma 20℃ | 270 MPa |
| 高温抗弯强度 / Modulus of rupture ma 1200℃ | 290 MPa |
| 硬度 / Paʻa ma 20 ℃ | 2400 Kg/mm² |
| 断裂韧性 / ʻO ka paakiki haʻihaʻi ma 20% | 3.3 MPa · m1/2 |
| 导热系数 / Hoʻolima wela ma 1200 ℃ | 45 w/m .K |
| 热膨胀系数 / Hoʻonui wela ma 20-1200℃ | 4.5 1 ×10 -6/℃ |
| 最高工作温度 / Max.pāhana hana | 1400 ℃ |
| 热震稳定性 / Ke kū'ē i ka ha'alulu wela ma 1200℃ | Maikaʻi loa |
| CVD SiC 薄膜基本物理性能 Nā waiwai kino kumu o nā kiʻiʻoniʻoni CVD SiC | |
| 性质 / Waiwai | 典型数值 / Waiwai maʻamau |
| 晶体结构 / Kahua Crystal | FCC β phase polycrystalline, ka mea nui (111). |
| 密度 / Density | 3.21 g/cm³ |
| 硬度 / Paʻa 2500 | 维氏硬度（500g load） |
| 晶粒大小 / Grain SiZe | 2~10μm |
| 纯度 / Maʻemaʻe Kemika | 99.99995% |
| 热容 / Kaha Wela | 640 J·kg-1·K-1 |
| 升华温度 / Kaumaha Sublimation | 2700 ℃ |
| 抗弯强度 / Ikaika Flexural | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt piko, 1300 ℃ |
| 导热系数 / Hoʻokaʻawale wela | 300W·m-1·K-1 |
| 热膨胀系数 / Hoʻonui Thermal(CTE) | 4.5×10-6 K -1 |
Pyrolytic Carbon Coating
Nā hiʻohiʻona nui
ʻO ka ʻili he ʻeleʻele a ʻaʻohe pores.
ʻO ka maʻemaʻe kiʻekiʻe, ka nui o ka haumia maʻiʻo <20ppm, maikaʻi ka airtightness.
ʻO ka pale wela kiʻekiʻe, piʻi ka ikaika me ka hoʻonui ʻana i ka mahana hoʻohana, hiki i ka waiwai kiʻekiʻe ma 2750 ℃, sublimation ma 3600 ℃.
Haʻahaʻa elastic modulus, kiʻekiʻe thermal conductivity, haʻahaʻa haʻahaʻa hoʻonui hoʻonui ʻana, a me ka maikaʻi o ke kūʻē ʻana i ka haʻalulu wela.
ʻO ke kūpaʻa kemika maikaʻi, kū i ka waika, alkali, paʻakai, a me nā mea hoʻokalakupua, ʻaʻohe hopena i nā metala hoʻoheheʻe, slag, a me nā mea hoʻoheheʻe ʻē aʻe.ʻAʻole ia e oxidize nui i ka lewa ma lalo o 400 C, a piʻi nui ka oxidation rate ma 800 ℃.
Me ka hoʻokuʻu ʻole ʻana i kekahi kinoea ma nā wela kiʻekiʻe, hiki iā ia ke mālama i kahi ʻūhā o 10-7mmHg ma kahi o 1800°C.
noi huahana
Hoʻoheheʻe ʻia no ka hoʻoheheʻe ʻana i ka ʻoihana semiconductor.
ʻīpuka paipu uila mana kiʻekiʻe.
Palaki e pili ana i ka mea hoʻoponopono voltage.
graphite monochromator no ka X-ray a me ka neutron.
Nā ʻano ʻano like ʻole o nā substrates graphite a me ka uhi ʻana o ka paipu hoʻoheheʻe atomika.
Pyrolytic carbon coating hopena ma lalo o kahi microscope 500X, me ka ʻili paʻa a sila.
ʻO CVD Tantalum Carbide Coating
ʻO ka uhi ʻana ʻo TaC ka hanauna hou o nā mea wela kiʻekiʻe, me ka ʻoi aku ka maikaʻi o ka wela kiʻekiʻe ma mua o SiC.E like me ka corrosion-kūʻokoʻa uhi, anti-oxidation ka uhi a me ka lole-pale pale, hiki ke hoʻohana 'ia i loko o ke kaiapuni ma luna o 2000C, nui hoʻohana 'ia ma ka aerospace ultra-kiʻekiʻe wela wela wela wela, ke kolu o ka hanauna semiconductor hoʻokahi kristal ulu ulu.
| 碳化钽涂层物理特性物理特性 Nā waiwai kino o ka uhi TaC | |
| 密度/ Density | 14.3 (g/cm3) |
| 比辐射率 /Specific emissivity | 0.3 |
| 热膨胀系数/ Ka helu hoʻonui wela | 6.3 10/K |
| 努氏硬度 /Hardness (HK) | 2000 HK |
| 电阻/ Kūʻē | 1x10-5 Ohm*cm |
| 热稳定性 /Paʻa wela | <2500 ℃ |
| 石墨尺寸变化/Graphite loli nui | -10~-20um |
| 涂层厚度/Ka mānoanoa uhi | ≥220um waiwai maʻamau (35um±10um) |
Paʻa Silicon Carbide (CVD SiC)
ʻIke ʻia nā ʻāpana paʻa CVD SILICON CARBIDE ma ke ʻano he koho mua no nā apo RTP/EPI a me nā kumu a me nā ʻāpana etch cavity plasma e hana ana ma nā ʻōnaehana kiʻekiʻe e koi ʻia ana nā mahana hana (> 1500 ° C), ʻoi aku ka kiʻekiʻe o nā koi no ka maʻemaʻe (> 99.9995%). a ʻoi aku ka maikaʻi o ka hana inā kiʻekiʻe ke kiʻekiʻe o nā kemika tol.ʻAʻole i loaʻa i kēia mau mea nā ʻāpana lua ma ka ʻaoʻao o ka palaoa, no laila e liʻiliʻi nā ʻāpana i nā ʻāpana ma mua o nā mea ʻē aʻe.Eia hou, hiki ke hoʻomaʻemaʻe ʻia kēia mau ʻāpana me ka HF/HCI wela me ka liʻiliʻi o ka hoʻohaʻahaʻa ʻana, e hopena i nā mea liʻiliʻi a me ke ola o ka lawelawe ʻana.
