30mm Aluminum Nitride Wafer Substrate

ʻO ka wehewehe pōkole:

30mm Aluminum Nitride Wafer Substrate- E hoʻokiʻekiʻe i ka hana o kāu mau mea uila a me optoelectronic me Semicera's 30mm Aluminum Nitride Wafer Substrate, i hoʻolālā ʻia no ka hoʻoili wela ʻokoʻa a me ka insulation uila kiʻekiʻe.


Huahana Huahana

Huahana Huahana

Semicerahaʻaheo e hōʻike i ka30mm Aluminum Nitride Wafer Substrate, kahi mea kiʻekiʻe i hana ʻia e hoʻokō i nā koi koʻikoʻi o nā noi uila a me optoelectronic hou. Kaulana ʻia nā substrates Aluminum Nitride (AlN) no kā lākou conductivity thermal koʻikoʻi a me nā waiwai insulation uila, e hoʻolilo iā lākou i koho kūpono no nā mea hana kiʻekiʻe.

 

Nā mea nui:

• Kūikawā Thermal Conductivity: Ka30mm Aluminum Nitride Wafer Substratekaena i ka thermal conductivity a hiki i ka 170 W/mK, ʻoi aku ka kiʻekiʻe ma mua o nā mea substrate ʻē aʻe, e hōʻoiaʻiʻo ana i ka hoʻopau ʻana o ka wela ma nā noi mana kiʻekiʻe.

Kiekie Uila Insulation: Me nā waiwai insulating uila maikaʻi loa, hoʻemi kēia substrate i ke kamaʻilio keʻa a me ka hoʻopili ʻana i ka hōʻailona, ​​​​no ka mea kūpono ia no nā noi RF a me ka microwave.

Ikaika Mechanical: Ka30mm Aluminum Nitride Wafer Substratehāʻawi i ka ikaika mechanical a me ka paʻa, e hōʻoia ana i ka lōʻihi a me ka hilinaʻi ʻoiai ma lalo o nā kūlana hana koʻikoʻi.

Nā mea hoʻohana like ʻole: He kūpono kēia substrate no ka hoʻohana ʻana i nā LED mana kiʻekiʻe, laser diodes, a me nā ʻāpana RF, e hāʻawi ana i kahi kahua paʻa a hilinaʻi no kāu mau papahana koi nui.

Hana Pono: Hoʻopaʻa ʻo Semicera i ka hana ʻana o kēlā me kēia substrate wafer me ka pololei kiʻekiʻe loa, e hāʻawi ana i ka mānoanoa like ʻole a me ka maikaʻi o ka ʻili e hoʻokō i nā kūlana kūpono o nā mea uila kiʻekiʻe.

 

E hoʻonui i ka pono a me ka hilinaʻi o kāu mau polokalamu me Semicera's30mm Aluminum Nitride Wafer Substrate. Hoʻolālā ʻia kā mākou substrates e hoʻopuka i ka hana ʻoi aku ka maikaʻi, e hōʻoiaʻiʻo ana i kāu ʻōnaehana uila a me optoelectronic e hana i kā lākou maikaʻi loa. E hilinaʻi iā Semicera no nā mea ʻokiʻoki e alakaʻi i ka ʻoihana i ka maikaʻi a me ka hana hou.

Nā mea

Paahana

Ka noiʻi

Dummy

Nā Kūlana Crystal

Polytype

4H

Ua hewa ka hoʻonohonoho ʻana o ka ʻili

<11-20 >4±0.15°

Nā Kūlana Uila

Dopant

n-ʻano Nitrogen

Kū'ē

0.015-0.025ohm·cm

Nā Kūlana Mechanical

Anawaena

150.0±0.2mm

mānoanoa

350±25 μm

Kūlana pālahalaha mua

[1-100]±5°

Ka lōʻihi pālahalaha mua

47.5±1.5mm

palahalaha lua

ʻAʻohe

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Kakaka

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

'Oka (AFM) mua (Si-maka)

Ra≤0.2nm (5μm*5μm)

Hoʻolālā

Micropipe mānoanoa

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metala haumia

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

ʻAno o mua

Imua

Si

Hoʻopau ʻili

Si-maka CMP

Nā ʻāpana

≤60ea/wafer (nui≥0.3μm)

NA

Nā ʻōpala

≤5ea/mm. Ka lōʻihi huila ≤Diameter

ʻO ka lōʻihi huila≤2*Diameter

NA

ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination

ʻAʻohe

NA

Nā ʻāpana lihi/indents/fracture/papa hex

ʻAʻohe

Nā wahi polytype

ʻAʻohe

ʻĀpana huila≤20%

ʻĀpana huila≤30%

Hōʻailona laser mua

ʻAʻohe

ʻAno o hope

Hoʻopau hope

C-maka CMP

Nā ʻōpala

≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena

NA

Nā pōʻino hope (nā ʻāpana lihi/indents)

ʻAʻohe

ʻōkalakala kua

Ra≤0.2nm (5μm*5μm)

Hōʻailona laser hope

1 mm (mai ka lihi luna)

Kaulana

Kaulana

Chamfer

Hoʻopili ʻia

Hoʻopili ʻia

Epi-mākaukau me ka hoʻopaʻa ʻumeke

Puke cassette nui-wafer

*Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD.

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SiC wafers

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