Semicerahaʻaheo e hōʻike i ka30mm Aluminum Nitride Wafer Substrate, kahi mea kiʻekiʻe i hana ʻia e hoʻokō i nā koi koʻikoʻi o nā noi uila a me optoelectronic hou. Kaulana ʻia nā substrates Aluminum Nitride (AlN) no kā lākou conductivity thermal koʻikoʻi a me nā waiwai insulation uila, e hoʻolilo iā lākou i koho kūpono no nā mea hana kiʻekiʻe.
Nā mea nui:
• Kūikawā Thermal Conductivity: Ka30mm Aluminum Nitride Wafer Substratekaena i ka thermal conductivity a hiki i ka 170 W/mK, ʻoi aku ka kiʻekiʻe ma mua o nā mea substrate ʻē aʻe, e hōʻoiaʻiʻo ana i ka hoʻopau ʻana o ka wela ma nā noi mana kiʻekiʻe.
•Kiekie Uila Insulation: Me nā waiwai insulating uila maikaʻi loa, hoʻemi kēia substrate i ke kamaʻilio keʻa a me ka hoʻopili ʻana i ka hōʻailona, no ka mea kūpono ia no nā noi RF a me ka microwave.
•Ikaika Mechanical: Ka30mm Aluminum Nitride Wafer Substratehāʻawi i ka ikaika mechanical a me ka paʻa, e hōʻoia ana i ka lōʻihi a me ka hilinaʻi ʻoiai ma lalo o nā kūlana hana koʻikoʻi.
•Nā mea hoʻohana like ʻole: He kūpono kēia substrate no ka hoʻohana ʻana i nā LED mana kiʻekiʻe, laser diodes, a me nā ʻāpana RF, e hāʻawi ana i kahi kahua paʻa a hilinaʻi no kāu mau papahana koi nui.
•Hana Pono: Hoʻopaʻa ʻo Semicera i ka hana ʻana o kēlā me kēia substrate wafer me ka pololei kiʻekiʻe loa, e hāʻawi ana i ka mānoanoa like ʻole a me ka maikaʻi o ka ʻili e hoʻokō i nā kūlana kūpono o nā mea uila kiʻekiʻe.
E hoʻonui i ka pono a me ka hilinaʻi o kāu mau polokalamu me Semicera's30mm Aluminum Nitride Wafer Substrate. Hoʻolālā ʻia kā mākou substrates e hoʻopuka i ka hana ʻoi aku ka maikaʻi, e hōʻoiaʻiʻo ana i kāu ʻōnaehana uila a me optoelectronic e hana i kā lākou maikaʻi loa. E hilinaʻi iā Semicera no nā mea ʻokiʻoki e alakaʻi i ka ʻoihana i ka maikaʻi a me ka hana hou.
Nā mea | Paahana | Ka noiʻi | Dummy |
Nā Kūlana Crystal | |||
Polytype | 4H | ||
Ua hewa ka hoʻonohonoho ʻana o ka ʻili | <11-20 >4±0.15° | ||
Nā Kūlana Uila | |||
Dopant | n-ʻano Nitrogen | ||
Kū'ē | 0.015-0.025ohm·cm | ||
Nā Kūlana Mechanical | |||
Anawaena | 150.0±0.2mm | ||
mānoanoa | 350±25 μm | ||
Kūlana pālahalaha mua | [1-100]±5° | ||
Ka lōʻihi pālahalaha mua | 47.5±1.5mm | ||
palahalaha lua | ʻAʻohe | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Kakaka | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
'Oka (AFM) mua (Si-maka) | Ra≤0.2nm (5μm*5μm) | ||
Hoʻolālā | |||
Micropipe mānoanoa | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Metala haumia | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
ʻAno o mua | |||
Imua | Si | ||
Hoʻopau ʻili | Si-maka CMP | ||
Nā ʻāpana | ≤60ea/wafer (nui≥0.3μm) | NA | |
Nā ʻōpala | ≤5ea/mm. Ka lōʻihi huila ≤Diameter | ʻO ka lōʻihi huila≤2*Diameter | NA |
ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination | ʻAʻohe | NA | |
Nā ʻāpana lihi/indents/fracture/papa hex | ʻAʻohe | ||
Nā wahi polytype | ʻAʻohe | ʻĀpana huila≤20% | ʻĀpana huila≤30% |
Hōʻailona laser mua | ʻAʻohe | ||
ʻAno o hope | |||
Hoʻopau hope | C-maka CMP | ||
Nā ʻōpala | ≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena | NA | |
Nā pōʻino hope (nā ʻāpana lihi/indents) | ʻAʻohe | ||
ʻōkalakala kua | Ra≤0.2nm (5μm*5μm) | ||
Hōʻailona laser hope | 1 mm (mai ka lihi luna) | ||
Kaulana | |||
Kaulana | Chamfer | ||
Hoʻopili ʻia | |||
Hoʻopili ʻia | Epi-mākaukau me ka hoʻopaʻa ʻumeke Puke cassette nui-wafer | ||
*Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD. |