Hoʻolālā ʻia nā Semicera 3C-SiC Wafer Substrates e hāʻawi i kahi kahua paʻa no nā uila uila a me nā mea uila kiʻekiʻe. Me nā waiwai wela a me nā hiʻohiʻona uila, ua hoʻolālā ʻia kēia mau substrate e hoʻokō i nā koi koi o ka ʻenehana hou.
Hāʻawi ka 3C-SiC (Cubic Silicon Carbide) o Semicera Wafer Substrates i nā pono kūʻokoʻa, e komo pū ana me ka conductivity thermal kiʻekiʻe a me ka coefficient hoʻonui haʻahaʻa haʻahaʻa i hoʻohālikelike ʻia me nā mea semiconductor ʻē aʻe. ʻO kēia ka mea i koho maikaʻi loa no nā polokalamu e hana ana ma lalo o nā mahana wela a me nā kūlana mana kiʻekiʻe.
Me ka uila hoʻohaʻahaʻa uila kiʻekiʻe a me ke kūpaʻa kemika kiʻekiʻe, Semicera 3C-SiC Wafer Substrates e hōʻoia i ka hana lōʻihi a me ka hilinaʻi. He mea koʻikoʻi kēia mau waiwai no nā noi e like me ka radar kiʻekiʻe, nā kukui paʻa, a me nā mea hoʻohuli mana, kahi e pono ai ka pono a me ka lōʻihi.
Hōʻike ʻia ka hoʻokō ʻana o Semicera i ka maikaʻi ma ke kaʻina hana hana o kā lākou 3C-SiC Wafer Substrates, e hōʻoiaʻiʻo ana i ka lokahi a me ka paʻa i kēlā me kēia pūʻulu. Hāʻawi kēia pololei i ka hana holoʻokoʻa a me ka lōʻihi o nā mea uila i kūkulu ʻia ma luna o lākou.
Ma ke koho ʻana i Semicera 3C-SiC Wafer Substrates, loaʻa i nā mea hana ke komo i kahi mea ʻokiʻoki e hiki ai i ka hoʻomohala ʻana i nā mea uila liʻiliʻi, wikiwiki, a ʻoi aku ka maikaʻi. Ke hoʻomau nei ʻo Semicera i ke kākoʻo ʻana i ka ʻenehana ʻenehana ma o ka hāʻawi ʻana i nā hopena hilinaʻi e kū ana i nā koi e ulu nei o ka ʻoihana semiconductor.
| Nā mea | Paahana | Ka noiʻi | Dummy |
| Nā Kūlana Crystal | |||
| Polytype | 4H | ||
| Ua hewa ka hoʻonohonoho ʻana o ka ʻili | <11-20 >4±0.15° | ||
| Nā Kūlana Uila | |||
| Dopant | n-ʻano Nitrogen | ||
| Kū'ē | 0.015-0.025ohm·cm | ||
| Nā Kūlana Mechanical | |||
| Anawaena | 150.0±0.2mm | ||
| mānoanoa | 350±25 μm | ||
| Kūlana pālahalaha mua | [1-100]±5° | ||
| Ka lōʻihi pālahalaha mua | 47.5±1.5mm | ||
| palahalaha lua | ʻAʻohe | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Kakaka | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| 'Oka (AFM) mua (Si-maka) | Ra≤0.2nm (5μm*5μm) | ||
| Hoʻolālā | |||
| Micropipe mānoanoa | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metala haumia | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| ʻAno o mua | |||
| Imua | Si | ||
| Hoʻopau ʻili | Si-maka CMP | ||
| Nā ʻāpana | ≤60ea/wafer (nui≥0.3μm) | NA | |
| Nā ʻōpala | ≤5ea/mm. Ka lōʻihi huila ≤Diameter | ʻO ka lōʻihi huila≤2*Diameter | NA |
| ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination | ʻAʻohe | NA | |
| Nā ʻāpana lihi/indents/fracture/papa hex | ʻAʻohe | ||
| Nā wahi polytype | ʻAʻohe | ʻĀpana huila≤20% | ʻĀpana huila≤30% |
| Hōʻailona laser mua | ʻAʻohe | ||
| ʻAno o hope | |||
| Hoʻopau hope | C-maka CMP | ||
| Nā ʻōpala | ≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena | NA | |
| Nā hemahema o hope (nā ʻāpana lihi/indents) | ʻAʻohe | ||
| ʻōkalakala kua | Ra≤0.2nm (5μm*5μm) | ||
| Hōʻailona laser hope | 1 mm (mai ka lihi luna) | ||
| Kaulana | |||
| Kaulana | Chamfer | ||
| Hoʻopili ʻia | |||
| Hoʻopili ʻia | Epi-mākaukau me ka hoʻopaʻa ʻumeke Puke cassette nui-wafer | ||
| *Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD. | |||
