4″6″ 8″ N-ʻano SiC Ingot

ʻO ka wehewehe pōkole:

ʻO Semicera's 4″, 6″, a me 8″ N-type SiC Ingots ka pōhaku kihi no nā mea hana semiconductor kiʻekiʻe a me nā alapine kiʻekiʻe. Ke hāʻawi nei i nā waiwai uila kiʻekiʻe a me ka conductivity thermal, ua hana ʻia kēia mau ingots e kākoʻo i ka hana ʻana o nā mea uila hilinaʻi a maikaʻi. E hilinaʻi iā Semicera no ka maikaʻi ʻole a me ka hana.


Huahana Huahana

Huahana Huahana

ʻO Semicera's 4", 6", a me 8" N-type SiC Ingots e hōʻike ana i kahi holomua i nā mea semiconductor, i hoʻolālā ʻia e hoʻokō i nā koi nui o nā ʻōnaehana uila a me nā mana. ka hana a me ka lōʻihi.

Hoʻokumu ʻia kā mākou N-type SiC ingots me ka hoʻohana ʻana i nā kaʻina hana kiʻekiʻe e hoʻonui ai i kā lākou conductivity uila a me ke kūpaʻa wela. ʻO kēia ka mea i kūpono iā lākou no nā noi kiʻekiʻe a me nā alapine kiʻekiʻe, e like me nā inverters, transistors, a me nā mea uila uila ʻē aʻe kahi e pono ai ka pono a me ka hilinaʻi.

ʻO ka doping pololei o kēia mau ingots e hōʻoia i ka hāʻawi ʻana i ka hana paʻa a me ka hana hou. He mea koʻikoʻi kēia kūlike no nā mea hoʻomohala a me nā mea hana e koi nei i nā palena o ka ʻenehana i nā kula e like me ka aerospace, automotive, a me ke kelepona. Hiki i ka Semicera's SiC ingots ke hana i nā mea hana e hana pono ana ma lalo o nā kūlana koʻikoʻi.

ʻO ke koho ʻana i kā Semicera N-type SiC Ingots ʻo ia hoʻi ka hoʻohui ʻana i nā mea hiki ke mālama i nā wela kiʻekiʻe a me nā ukana uila kiʻekiʻe me ka maʻalahi. Ua kūpono kēia mau ingots no ka hana ʻana i nā ʻāpana e pono ai ka hoʻokele wela maikaʻi a me ka hana kiʻekiʻe, e like me nā RF amplifier a me nā modula mana.

Ma ke koho ʻana iā Semicera's 4", 6", a me 8" N-type SiC Ingots, ke kālele nei ʻoe i kahi huahana e hoʻohui i nā waiwai waiwai kūʻokoʻa me ka pololei a me ka hilinaʻi i koi ʻia e nā ʻenehana semiconductor ʻokiʻoki. Ke hoʻomau nei ʻo Semicera i ke alakaʻi ʻana i ka ʻoihana e hāʻawi ʻana i nā hāʻina hou e alakaʻi i ka holomua o ka hana ʻana i nā mea uila.

Nā mea

Paahana

Ka noiʻi

Dummy

Nā Kūlana Crystal

Polytype

4H

Ua hewa ka hoʻonohonoho ʻana o ka ʻili

<11-20 >4±0.15°

Nā Kūlana Uila

Dopant

n-ʻano Nitrogen

Kū'ē

0.015-0.025ohm·cm

Nā Kūlana Mechanical

Anawaena

150.0±0.2mm

mānoanoa

350±25 μm

Kūlana pālahalaha mua

[1-100]±5°

Ka lōʻihi pālahalaha mua

47.5±1.5mm

palahalaha lua

ʻAʻohe

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Kakaka

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

'Oka (AFM) mua (Si-maka)

Ra≤0.2nm (5μm*5μm)

Hoʻolālā

Micropipe mānoanoa

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metala haumia

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

ʻAno o mua

Imua

Si

Hoʻopau ʻili

Si-maka CMP

Nā ʻāpana

≤60ea/wafer (nui≥0.3μm)

NA

Nā ʻōpala

≤5ea/mm. Ka lōʻihi huila ≤Diameter

ʻO ka lōʻihi huila≤2*Diameter

NA

ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination

ʻAʻohe

NA

Nā ʻāpana lihi/indents/fracture/papa hex

ʻAʻohe

Nā wahi polytype

ʻAʻohe

ʻĀpana huila≤20%

ʻĀpana huila≤30%

Hōʻailona laser mua

ʻAʻohe

ʻAno o hope

Hoʻopau hope

C-maka CMP

Nā ʻōpala

≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena

NA

Nā hemahema o hope (nā ʻāpana lihi/indents)

ʻAʻohe

ʻōkalakala kua

Ra≤0.2nm (5μm*5μm)

Hōʻailona laser hope

1 mm (mai ka lihi luna)

Kaulana

Kaulana

Chamfer

Hoʻopili ʻia

Hoʻopili ʻia

Epi-mākaukau me ka hoʻopaʻa ʻumeke

Puke cassette nui-wafer

*Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD.

tech_1_2_size
SiC wafers

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