ʻO Semicera's 4", 6", a me 8" N-type SiC Ingots e hōʻike ana i kahi holomua i nā mea semiconductor, i hoʻolālā ʻia e hoʻokō i nā koi nui o nā ʻōnaehana uila a me nā mana. ka hana a me ka lōʻihi.
Hoʻokumu ʻia kā mākou N-type SiC ingots me ka hoʻohana ʻana i nā kaʻina hana kiʻekiʻe e hoʻonui ai i kā lākou conductivity uila a me ke kūpaʻa wela. ʻO kēia ka mea i kūpono iā lākou no nā noi mana kiʻekiʻe a me nā alapine kiʻekiʻe, e like me nā inverters, transistors, a me nā mea uila uila ʻē aʻe kahi i koʻikoʻi ai ka pono a me ka hilinaʻi.
ʻO ka doping pololei o kēia mau ingots e hōʻoia i ka hāʻawi ʻana i ka hana paʻa a me ka hana hou. He mea koʻikoʻi kēia kūlike no nā mea hoʻomohala a me nā mea hana e koi nei i nā palena o ka ʻenehana i nā kula e like me ka aerospace, automotive, a me ke kelepona. Hiki i ka Semicera's SiC ingots ke hana i nā mea hana e hana pono ana ma lalo o nā kūlana koʻikoʻi.
ʻO ke koho ʻana i kā Semicera N-type SiC Ingots ʻo ia hoʻi ka hoʻohui ʻana i nā mea hiki ke mālama i nā wela kiʻekiʻe a me nā ukana uila kiʻekiʻe me ka maʻalahi. Ua kūpono kēia mau ingots no ka hana ʻana i nā ʻāpana e pono ai ka hoʻokele wela maikaʻi a me ka hana kiʻekiʻe, e like me nā RF amplifier a me nā modula mana.
Ma ke koho ʻana iā Semicera's 4", 6", a me 8" N-type SiC Ingots, ke kālele nei ʻoe i kahi huahana e hoʻohui i nā waiwai waiwai kūʻokoʻa me ka pololei a me ka hilinaʻi i koi ʻia e nā ʻenehana semiconductor ʻokiʻoki. Ke hoʻomau nei ʻo Semicera i ke alakaʻi ʻana i ka ʻoihana e ka hāʻawi ʻana i nā hāʻina hou e hoʻoikaika i ka holomua o ka hana ʻana i nā mea uila.
| Nā mea | Paahana | Ka noiʻi | Dummy |
| Nā Kūlana Crystal | |||
| Polytype | 4H | ||
| Ua hewa ka hoʻonohonoho ʻana o ka ʻili | <11-20 >4±0.15° | ||
| Nā Kūlana Uila | |||
| Dopant | n-ʻano Nitrogen | ||
| Kū'ē | 0.015-0.025ohm·cm | ||
| Nā Kūlana Mechanical | |||
| Anawaena | 150.0±0.2mm | ||
| mānoanoa | 350±25 μm | ||
| Kūlana pālahalaha mua | [1-100]±5° | ||
| Ka lōʻihi pālahalaha mua | 47.5±1.5mm | ||
| palahalaha lua | ʻAʻohe | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Kakaka | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| 'Oka (AFM) mua (Si-maka) | Ra≤0.2nm (5μm*5μm) | ||
| Hoʻolālā | |||
| Micropipe mānoanoa | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metala haumia | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| ʻAno o mua | |||
| Imua | Si | ||
| Hoʻopau ʻili | Si-maka CMP | ||
| Nā ʻāpana | ≤60ea/wafer (nui≥0.3μm) | NA | |
| Nā ʻōpala | ≤5ea/mm. Ka lōʻihi huila ≤Diameter | ʻO ka lōʻihi huila≤2*Diameter | NA |
| ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination | ʻAʻohe | NA | |
| Nā ʻāpana lihi/indents/fracture/papa hex | ʻAʻohe | ||
| Nā wahi polytype | ʻAʻohe | ʻĀpana huila≤20% | ʻĀpana huila≤30% |
| Hōʻailona laser mua | ʻAʻohe | ||
| ʻAno o hope | |||
| Hoʻopau hope | C-maka CMP | ||
| Nā ʻōpala | ≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena | NA | |
| Nā pōʻino hope (nā ʻāpana lihi/indents) | ʻAʻohe | ||
| ʻōkalakala kua | Ra≤0.2nm (5μm*5μm) | ||
| Hōʻailona laser hope | 1 mm (mai ka lihi luna) | ||
| Kaulana | |||
| Kaulana | Chamfer | ||
| Hoʻopili ʻia | |||
| Hoʻopili ʻia | Epi-mākaukau me ka hoʻopaʻa ʻumeke Puke cassette nui-wafer | ||
| *Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD. | |||
