ʻO Semicera's 4" 6" Semi-Insulating SiC Substrate he mea kiʻekiʻe kiʻekiʻe i hoʻolālā ʻia e hoʻokō i nā koi koʻikoʻi o RF a me nā noi mea mana. Hoʻohui ka substrate i ka conductivity thermal maikaʻi loa a me ka voltage breakdown kiʻekiʻe o ka silicon carbide me nā waiwai semi-insulating, e lilo ia i koho kūpono no ka hoʻomohala ʻana i nā polokalamu semiconductor holomua.
Hana ʻia ʻo 4" 6" Semi-Insulating SiC Substrate i mea e hōʻoia ai i nā mea maʻemaʻe kiʻekiʻe a me ka hana semi-insulating mau. Hōʻoia kēia e hāʻawi ka substrate i ka hoʻokaʻawale uila pono i nā mea RF e like me nā amplifier a me nā transistors, ʻoiai e hāʻawi pū ana i ka pono wela e pono ai no nā noi mana kiʻekiʻe. ʻO ka hopena he substrate versatile i hiki ke hoʻohana ʻia i kahi ākea o nā huahana uila kiʻekiʻe.
Hoʻomaopopo ʻo Semicera i ke koʻikoʻi o ka hāʻawi ʻana i nā substrates hilinaʻi, kīnā ʻole no nā noi semiconductor koʻikoʻi. Hoʻokumu ʻia kā mākou 4" 6" Semi-Insulating SiC Substrate me ka hoʻohana ʻana i nā ʻenehana hana kiʻekiʻe e hōʻemi i nā hemahema aniani a hoʻomaikaʻi i ka like ʻana o nā mea. Hāʻawi kēia i ka huahana e kākoʻo i ka hana ʻana i nā mea hana me ka hoʻonui ʻana i ka hana, kūpaʻa, a me ke ola.
ʻO ka hoʻokō ʻana o Semicera i ka maikaʻi e hōʻoia i kā mākou 4" 6" Semi-Insulating SiC Substrate e hāʻawi i ka hana hilinaʻi a kūpaʻa ma waena o nā ʻano noi. Inā ʻoe e hoʻomohala nei i nā hāmeʻa kiʻekiʻe a i ʻole nā hopena mana ikaika, ʻo kā mākou semi-insulating SiC substrates e hāʻawi i ke kumu no ka kūleʻa o nā mea uila e hiki mai ana.
Nā palena kumu
Nui | 6-iniha | 4-iniha |
Anawaena | 150.0mm+0mm/-0.2mm | 100.0mm+0mm/-0.5mm |
Kūlana ʻili | {0001}±0.2° | |
Kūlana Pāha mua | / | <1120>±5° |
ʻŌnaehana Paʻa lua | / | ʻO ke alo silika i luna: 90° CW mai Prime flat士5° |
Ka lōʻihi pālahalaha | / | 32.5 mm a me 2.0 mm |
Ka lōʻihi pālahalaha lua | / | 18.0 mm a i 2.0 mm |
Kūlana Notch | <1100>±1.0° | / |
Kūlana Notch | 1.0mm+0.25 mm/-0.00 mm | / |
ʻĀneki ʻAiʻa | 90°+5°/-1° | / |
mānoanoa | 500.0um士25.0um | |
ʻAno Conductive | Semi-insulating |
ʻO ka ʻike o ka maikaʻi kristal
ltem | 6-iniha | 4-iniha |
Kū'ē | ≥1E9Q·cm | |
Polytype | ʻAʻole ʻae ʻia | |
Micropipe Density | ≤0.5/cm2 | ≤0.3/cm2 |
Nā Papa Hex ma ke kukui ikaika kiʻekiʻe | ʻAʻole ʻae ʻia | |
ʻIke ʻia ʻo Carbon Inclusions ma ke kiʻekiʻe | ʻĀpana huila≤0.05% |