4″ 6″ Semi-Insulating SiC substrate

ʻO ka wehewehe pōkole:

ʻO nā substrate Semi-insulating SiC kahi mea semiconductor me ke kū'ē kiʻekiʻe, me ka pale ʻana ma mua o 100,000Ω·cm. Hoʻohana nui ʻia nā substrate Semi-insulating SiC no ka hana ʻana i nā polokalamu RF microwave e like me nā mea gallium nitride microwave RF a me nā transistors mobility electron kiʻekiʻe (HEMTs). Hoʻohana nui ʻia kēia mau mea i nā kamaʻilio 5G, nā kamaʻilio satellite, nā radar a me nā kahua ʻē aʻe.

 

 


Huahana Huahana

Huahana Huahana

ʻO Semicera's 4" 6" Semi-Insulating SiC Substrate he mea kiʻekiʻe kiʻekiʻe i hoʻolālā ʻia e hoʻokō i nā koi koʻikoʻi o RF a me nā noi mea mana. Hoʻohui ka substrate i ka conductivity thermal maikaʻi loa a me ka voltage breakdown kiʻekiʻe o ka silicon carbide me nā waiwai semi-insulating, e lilo ia i koho kūpono no ka hoʻomohala ʻana i nā polokalamu semiconductor holomua.

Hana ʻia ʻo 4" 6" Semi-Insulating SiC Substrate i mea e hōʻoia ai i nā mea maʻemaʻe kiʻekiʻe a me ka hana semi-insulating mau. Hōʻoia kēia e hāʻawi ka substrate i ka hoʻokaʻawale uila pono i nā mea RF e like me nā amplifier a me nā transistors, ʻoiai e hāʻawi pū ana i ka pono wela e pono ai no nā noi mana kiʻekiʻe. ʻO ka hopena he substrate versatile i hiki ke hoʻohana ʻia i kahi ākea o nā huahana uila kiʻekiʻe.

Hoʻomaopopo ʻo Semicera i ke koʻikoʻi o ka hāʻawi ʻana i nā substrates hilinaʻi, kīnā ʻole no nā noi semiconductor koʻikoʻi. Hoʻokumu ʻia kā mākou 4" 6" Semi-Insulating SiC Substrate me ka hoʻohana ʻana i nā ʻenehana hana kiʻekiʻe e hōʻemi i nā hemahema aniani a hoʻomaikaʻi i ka like ʻana o nā mea. Hāʻawi kēia i ka huahana e kākoʻo i ka hana ʻana i nā mea hana me ka hoʻonui ʻana i ka hana, kūpaʻa, a me ke ola.

ʻO ka hoʻokō ʻana o Semicera i ka maikaʻi e hōʻoia i kā mākou 4" 6" Semi-Insulating SiC Substrate e hāʻawi i ka hana hilinaʻi a kūpaʻa ma waena o nā ʻano noi. Inā ʻoe e hoʻomohala nei i nā hāmeʻa kiʻekiʻe a i ʻole nā ​​hopena mana ikaika, ʻo kā mākou semi-insulating SiC substrates e hāʻawi i ke kumu no ka kūleʻa o nā mea uila e hiki mai ana.

Nā palena kumu

Nui

6-iniha 4-iniha
Anawaena 150.0mm+0mm/-0.2mm 100.0mm+0mm/-0.5mm
Kūlana ʻili {0001}±0.2°
Kūlana Pāha mua / <1120>±5°
ʻŌnaehana Paʻa lua / ʻO ke alo silika i luna: 90° CW mai Prime flat士5°
Ka lōʻihi pālahalaha / 32.5 mm a me 2.0 mm
Ka lōʻihi pālahalaha lua / 18.0 mm a i 2.0 mm
Kūlana Notch <1100>±1.0° /
Kūlana Notch 1.0mm+0.25 mm/-0.00 mm /
ʻĀneki ʻAiʻa 90°+5°/-1° /
mānoanoa 500.0um士25.0um
ʻAno Conductive Semi-insulating

ʻO ka ʻike o ka maikaʻi kristal

ltem 6-iniha 4-iniha
Kū'ē ≥1E9Q·cm
Polytype ʻAʻole ʻae ʻia
Micropipe Density ≤0.5/cm2 ≤0.3/cm2
Nā Papa Hex ma ke kukui ikaika kiʻekiʻe ʻAʻole ʻae ʻia
ʻIke ʻia ʻo Carbon Inclusions ma ke kiʻekiʻe ʻĀpana huila≤0.05%
4 6 Semi-Insulating SiC Substrate-2

Resistivity-Hoʻāʻo ʻia e ke kūʻē pepa non-contact.

4 6 Semi-Insulating SiC Substrate-3

Micropipe Density

4 6 Semi-Insulating SiC substrate-4
SiC wafers

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