ʻO Semicera's 4 Inch High Purity Semi-Insulating (HPSI) SiC Double-side Polished Wafer Substrates ua hana ʻia e hoʻokō i nā koi koi o ka ʻoihana semiconductor. Hoʻolālā ʻia kēia mau substrates me ka pālahalaha ʻokoʻa a me ka maʻemaʻe, e hāʻawi ana i kahi kahua kūpono no nā mea uila ʻokiʻoki.
Hoʻokaʻawale ʻia kēia mau wafers HPSI SiC e ko lākou conductivity thermal kiʻekiʻe a me nā waiwai insulation uila, e hoʻolilo iā lākou i koho maikaʻi loa no nā noi kiʻekiʻe a me nā mana kiʻekiʻe. ʻO ke kaʻina hana polishing ʻaoʻao ʻelua e hōʻoia i ka liʻiliʻi o ka ʻili, he mea koʻikoʻi ia no ka hoʻonui ʻana i ka hana a me ka lōʻihi.
ʻO ka maʻemaʻe kiʻekiʻe o Semicera's SiC wafers e hōʻemi i nā hemahema a me nā haumia, e alakaʻi ana i nā kumukūʻai kiʻekiʻe a me ka hilinaʻi o nā mea hana. He kūpono kēia mau substrate no ka nui o nā noi, me nā polokalamu microwave, nā uila uila, a me nā ʻenehana LED, kahi e pono ai ka pololei a me ka lōʻihi.
Me ka nānā ʻana i ka hana hou a me ka maikaʻi, hoʻohana ʻo Semicera i nā ʻenehana hana kiʻekiʻe e hana i nā wafers e kū ana i nā koi koʻikoʻi o ka uila uila hou. ʻAʻole hoʻomaikaʻi wale ka polishing ʻaoʻao ʻelua i ka ikaika mechanical akā hoʻomaʻamaʻa hoʻi i ka hoʻohui maikaʻi ʻana me nā mea semiconductor ʻē aʻe.
Ma ke koho ʻana i ka Semicera's 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrates, hiki i nā mea hana ke hoʻohana i nā pōmaikaʻi o ka hoʻomaikaʻi ʻana i ka hoʻokele wela a me ka insulation uila, e wehe ana i ke ala no ka hoʻomohala ʻana i nā mea uila ʻoi aku ka maikaʻi a me ka ikaika. Ke hoʻomau nei ʻo Semicera i ke alakaʻi ʻana i ka ʻoihana me kāna kūpaʻa i ka maikaʻi a me ka holomua ʻenehana.
| Nā mea | Paahana | Ka noiʻi | Dummy |
| Nā Kūlana Crystal | |||
| Polytype | 4H | ||
| Ua hewa ka hoʻonohonoho ʻana o ka ʻili | <11-20 >4±0.15° | ||
| Nā Kūlana Uila | |||
| Dopant | n-ʻano Nitrogen | ||
| Kū'ē | 0.015-0.025ohm·cm | ||
| Nā Kūlana Mechanical | |||
| Anawaena | 150.0±0.2mm | ||
| mānoanoa | 350±25 μm | ||
| Kūlana pālahalaha mua | [1-100]±5° | ||
| Ka lōʻihi pālahalaha mua | 47.5±1.5mm | ||
| palahalaha lua | ʻAʻohe | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Kakaka | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| 'Oka (AFM) mua (Si-maka) | Ra≤0.2nm (5μm*5μm) | ||
| Hoʻolālā | |||
| Micropipe mānoanoa | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metala haumia | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| ʻAno o mua | |||
| Imua | Si | ||
| Hoʻopau ʻili | Si-maka CMP | ||
| Nā ʻāpana | ≤60ea/wafer (nui≥0.3μm) | NA | |
| Nā ʻōpala | ≤5ea/mm. Ka lōʻihi huila ≤Diameter | ʻO ka lōʻihi huila≤2*Diameter | NA |
| ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination | ʻAʻohe | NA | |
| Nā ʻāpana lihi/indents/fracture/papa hex | ʻAʻohe | ||
| Nā wahi polytype | ʻAʻohe | ʻĀpana huila≤20% | ʻĀpana huila≤30% |
| Hōʻailona laser mua | ʻAʻohe | ||
| ʻAno o hope | |||
| Hoʻopau hope | C-maka CMP | ||
| Nā ʻōpala | ≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena | NA | |
| Nā pōʻino hope (nā ʻāpana lihi/indents) | ʻAʻohe | ||
| ʻōkalakala kua | Ra≤0.2nm (5μm*5μm) | ||
| Hōʻailona laser hope | 1 mm (mai ka lihi luna) | ||
| Kaulana | |||
| Kaulana | Chamfer | ||
| Hoʻopili ʻia | |||
| Hoʻopili ʻia | Epi-mākaukau me ka hoʻopaʻa ʻumeke Puke cassette nui-wafer | ||
| *Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD. | |||
