4 Iniha SiC substrate N-ano

4 'īniha SiC Substrate N-type Kiʻi Hōʻike ʻia

ʻO ka wehewehe pōkole:

Hāʻawi ʻo Semicera i kahi ākea o nā wafers 4H-8H SiC. No nā makahiki he nui, he mea hana mākou a me ka mea hoʻolako i nā huahana i ka semiconductor a me nā ʻoihana photovoltaic. ʻO kā mākou huahana nui, ʻo ia nā: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer boats (PV & Semiconductor), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide beams, a me CVD SiC coatings a ʻO nā pale TaC. E uhi ana i ka hapa nui o nā mākeke ʻEulopa a me ʻAmelika. Manaʻo mākou e lilo i hoa pili lōʻihi ma Kina.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

ʻO Silicon carbide (SiC) hoʻokahi kristal mea i loaʻa i kahi ākea ākea nui (~ Si 3 mau manawa), kiʻekiʻe thermal conductivity (~ Si 3.3 mau manawa a i ʻole GaAs 10 manawa), kiʻekiʻe electron saturation migration rate (~ Si 2.5 mau manawa), kiʻekiʻe breakdown uila. kahua (~ Si 10 manawa a i ʻole GaAs 5 manawa) a me nā hiʻohiʻona ʻē aʻe.

Hiki i ka ikaika Semicera ke hāʻawi aku i nā mea kūʻai aku me ke kūlana kiʻekiʻe Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; Eia hou, hiki iā mākou ke hāʻawi aku i nā mea kūʻai aku me nā pepa epitaxial silicon carbide homogeneous a heterogeneous; Hiki iā mākou ke hoʻopilikino i ka pepa epitaxial e like me nā pono kikoʻī o nā mea kūʻai aku, a ʻaʻohe palena liʻiliʻi.

Nā mea	Paahana	Ka noiʻi	Dummy
Nā Kūlana Crystal
Polytype	4H
Ua hewa ka hoʻonohonoho ʻana o ka ʻili	<11-20 >4±0.15°
Nā Kūlana Uila
Dopant	n-ʻano Nitrogen
Kū'ē	0.015-0.025ohm·cm
Nā Kūlana Mechanical
Anawaena	99.5 - 100mm
mānoanoa	350±25 μm
Kūlana pālahalaha mua	[1-100]±5°
Ka lōʻihi pālahalaha mua	32.5±1.5mm
Kūlana palahalaha lua	90° CW mai ka papahele mua ±5°. ke alo kilika i luna
Ka lōʻihi pālahalaha lua	18±1.5mm
TTV	≤5 μm	≤10 μm	≤20 μm
LTV	≤2 μm(5mm*5mm)	≤5 μm(5mm*5mm)	NA
Kakaka	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
Warp	≤20 μm	≤45 μm	≤50 μm
'Oka (AFM) mua (Si-maka)	Ra≤0.2nm (5μm*5μm)
Hoʻolālā
Micropipe mānoanoa	≤1 ea/cm2	≤5 ea/cm2	≤10 ea/cm2
Metala haumia	≤5E10atoms/cm2		NA
BPD	≤1500 ea/cm2	≤3000 ea/cm2	NA
TSD	≤500 ea/cm2	≤1000 ea/cm2	NA
ʻAno o mua
Imua	Si
Hoʻopau ʻili	Si-maka CMP
Nā ʻāpana	≤60ea/wafer (nui≥0.3μm)	NA
Nā ʻōpala	≤2ea/mm. Ka lōʻihi huila ≤Diameter	ʻO ka lōʻihi huila≤2*Diameter	NA
ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination	ʻAʻohe		NA
Nā ʻāpana lihi/indents/fracture/papa hex	ʻAʻohe		NA
Nā wahi polytype	ʻAʻohe	ʻĀpana huila≤20%	ʻĀpana huila≤30%
Hōʻailona laser mua	ʻAʻohe
ʻAno o hope
Hoʻopau hope	C-maka CMP
Nā ʻōpala	≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena	NA
Nā pōʻino hope (nā ʻāpana lihi/indents)	ʻAʻohe
ʻōkalakala kua	Ra≤0.2nm (5μm*5μm)
Hōʻailona laser hope	1 mm (mai ka lihi luna)
Kaulana
Kaulana	Chamfer
Hoʻopili ʻia
Hoʻopili ʻia	Hoʻopiha ʻia ka ʻeke i loko me ka nitrogen a hoʻomaʻemaʻe ʻia ka ʻeke o waho. ʻO ka cassette nui-wafer, epi-mākaukau.
*Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD.