4″ 6″ Maʻemaʻe Kiʻekiʻe Semi-Insulating SiC Ingot

ʻO ka wehewehe pōkole:

ʻO Semicera's 4"6" High Purity Semi-Insulating SiC Ingots i hana meticulously no nā polokalamu uila a me optoelectronic kiʻekiʻe. E hōʻike ana i ka conductivity thermal maikaʻi a me ka resistivity uila, hāʻawi kēia mau ingots i kumu paʻa no nā mea hana kiʻekiʻe. Mālama ʻo Semicera i ka maikaʻi a me ka hilinaʻi i kēlā me kēia huahana.


Huahana Huahana

Huahana Huahana

ʻO Semicera's 4"6" High Purity Semi-Insulating SiC Ingots i hoʻolālā ʻia e hoʻokō i nā kūlana kūpono o ka ʻoihana semiconductor. Hana ʻia kēia mau ingots me ka nānā ʻana i ka maʻemaʻe a me ke kūpaʻa, e hoʻolilo iā lākou i koho maikaʻi loa no nā noi kiʻekiʻe a me nā alapine kiʻekiʻe kahi mea nui ka hana.

ʻO nā waiwai kūʻokoʻa o kēia mau SiC ingots, me ka conductivity thermal kiʻekiʻe a me ka resistivity uila maikaʻi loa, e kūpono iā lākou no ka hoʻohana ʻana i nā uila uila a me nā polokalamu microwave. ʻO kā lākou ʻano semi-insulating hiki ke hoʻopau i ka wela a me ka liʻiliʻi o ka uila uila, e alakaʻi ana i nā ʻāpana ʻoi aku ka maikaʻi a hilinaʻi.

Hoʻohana ʻo Semicera i nā kaʻina hana hou no ka hana ʻana i nā ingots me ka maikaʻi o ke aniani a me ke kūlike. Hōʻoia kēia kikoʻī e hiki ke hoʻohana pono ʻia kēlā me kēia ingot i nā noi koʻikoʻi, e like me nā amplifier kiʻekiʻe-frequency, laser diodes, a me nā mea hana optoelectronic ʻē aʻe.

Loaʻa i ka nui 4-inch a me 6-inch, Semicera's SiC ingots e hāʻawi i ka maʻalahi e pono ai no nā unahi hana like ʻole a me nā koi ʻenehana. Inā no ka noiʻi a me ka hoʻomohala ʻana a i ʻole ka hana nui, hāʻawi kēia mau ingots i ka hana a me ka lōʻihi i koi ʻia e nā ʻōnaehana uila hou.

Ma ke koho ʻana i ka High Purity Semi-Insulating SiC Ingots o Semicera, ke hoʻopukapuka nei ʻoe i kahi huahana e hoʻohui i ka ʻepekema waiwai kiʻekiʻe me ka ʻike hana hana like ʻole. Hoʻolaʻa ʻia ʻo Semicera i ke kākoʻo ʻana i ka hana hou a me ka ulu ʻana o ka ʻoihana semiconductor, e hāʻawi ana i nā mea e hiki ai i ka hoʻomohala ʻana i nā mea uila uila.

Nā mea

Paahana

Ka noiʻi

Dummy

Nā Kūlana Crystal

Polytype

4H

Ua hewa ka hoʻonohonoho ʻana o ka ʻili

<11-20 >4±0.15°

Nā Kūlana Uila

Dopant

n-ʻano Nitrogen

Kū'ē

0.015-0.025ohm·cm

Nā Kūlana Mechanical

Anawaena

150.0±0.2mm

mānoanoa

350±25 μm

Kūlana pālahalaha mua

[1-100]±5°

Ka lōʻihi pālahalaha mua

47.5±1.5mm

palahalaha lua

ʻAʻohe

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Kakaka

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

'Oka (AFM) mua (Si-maka)

Ra≤0.2nm (5μm*5μm)

Hoʻolālā

Micropipe mānoanoa

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metala haumia

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

ʻAno o mua

Imua

Si

Hoʻopau ʻili

Si-maka CMP

Nā ʻāpana

≤60ea/wafer (nui≥0.3μm)

NA

Nā ʻōpala

≤5ea/mm. Ka lōʻihi huila ≤Diameter

ʻO ka lōʻihi huila≤2*Diameter

NA

ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination

ʻAʻohe

NA

Nā ʻāpana lihi/indents/fracture/papa hex

ʻAʻohe

Nā wahi polytype

ʻAʻohe

ʻĀpana huila≤20%

ʻĀpana huila≤30%

Hōʻailona laser mua

ʻAʻohe

ʻAno o hope

Hoʻopau hope

C-maka CMP

Nā ʻōpala

≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena

NA

Nā hemahema o hope (nā ʻāpana lihi/indents)

ʻAʻohe

ʻōkalakala kua

Ra≤0.2nm (5μm*5μm)

Hōʻailona laser hope

1 mm (mai ka lihi luna)

Kaulana

Kaulana

Chamfer

Hoʻopili ʻia

Hoʻopili ʻia

Epi-mākaukau me ka hoʻopaʻa ʻumeke

Puke cassette nui-wafer

*Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD.

tech_1_2_size
SiC wafers

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