1. E pili anaʻO Silicon Carbide (SiC) Epitaxial Wafers
Hoʻokumu ʻia nā wafers epitaxial Silicon Carbide (SiC) ma ka waiho ʻana i hoʻokahi papa aniani ma luna o ka wafer me ka hoʻohana ʻana i ka wafer kristal hoʻokahi silicon carbide ma ke ʻano he substrate, maʻamau e ka chemical vapor deposition (CVD). Ma waena o lākou, hoʻomākaukau ʻia ka epitaxial silicon carbide e ka ulu ʻana i ka papa epitaxial silicon carbide epitaxial ma ka substrate silicon carbide substrate, a hana hou ʻia i nā mea hana kiʻekiʻe.
2.Silicon Carbide Epitaxial WaferNā kikoʻī
Hiki iā mākou ke hāʻawi i 4, 6, 8 iniha N-type 4H-SiC epitaxial wafers. He bandwidth nui ka epitaxial wafer, kiʻekiʻe saturation electron drift speed, kiʻekiʻe kiʻekiʻe kiʻekiʻe ʻelua-dimensional electron kinoea, a kiʻekiʻe breakdown kahua ikaika. ʻO kēia mau waiwai e hana i ka mea hana i ka pale wela kiʻekiʻe, ke kūpaʻa uila kiʻekiʻe, ka wikiwiki o ka hoʻololi ʻana, haʻahaʻa i ka pale, liʻiliʻi a me ke kaumaha māmā.
3. SiC Epitaxial Applications
SiC epitaxial waferHoʻohana nui ʻia ia ma Schottky diode (SBD), metala oxide semiconductor field effect transistor (MOSFET) junction field effect transistor (JFET), bipolar junction transistor (BJT), thyristor (SCR), insulated gate bipolar transistor (IGBT), i hoʻohana ʻia. i ka haʻahaʻa-voltage, waena-voltage a me kiʻekiʻe-voltage kahua. I kēia manawa,SiC epitaxial wafersno nā noi kiʻekiʻe-voltage aia i ka pae noiʻi a me ka hoʻomohala honua.
