6 ʻīniha N-type SiC substrate

ʻO Silicon carbide (SiC) hoʻokahi kristal mea i loaʻa i kahi ākea ākea nui (~ Si 3 mau manawa), kiʻekiʻe thermal conductivity (~ Si 3.3 mau manawa a i ʻole GaAs 10 manawa), kiʻekiʻe electron saturation migration rate (~ Si 2.5 mau manawa), kiʻekiʻe breakdown uila. kahua (~ Si 10 manawa a i ʻole GaAs 5 manawa) a me nā hiʻohiʻona ʻē aʻe.

ʻO ke kolu o ka hanauna semiconductor waiwai ka nui o ka SiC, GaN, daimana, a me nā mea ʻē aʻe, no ka mea, ʻoi aku ka nui o kona ākea ākea (Eg) ma mua a i ʻole like me 2.3 electron volts (eV), ʻike ʻia hoʻi he mau mea semiconductor ākea band gap. Ke hoʻohālikelike ʻia me nā mea semiconductor o ka hanauna mua a me ka lua, ʻo ke kolu o ka hanauna semiconductor nā mea maikaʻi o ke kiʻekiʻe thermal conductivity, kiʻekiʻe breakdown uila kahua, kiʻekiʻe saturated electron migration rate a me ka ikaika hoʻopaʻa kiʻekiʻe, hiki ke hoʻokō i nā koi hou o ka ʻenehana uila hou no ke kiʻekiʻe. ka mahana, ka mana kiʻekiʻe, ke kaomi kiʻekiʻe, ke alapine kiʻekiʻe a me ka pale radiation a me nā kūlana koʻikoʻi ʻē aʻe. Loaʻa iā ia nā manaʻo noiʻi koʻikoʻi ma nā kahua o ka pale aupuni, ka mokulele, ka aerospace, ka ʻimi ʻaila, ka mālama ʻana i ka optical, a me nā mea ʻē aʻe, a hiki ke hōʻemi i ka nalowale o ka ikehu ma mua o 50% i nā ʻoihana hoʻolālā he nui e like me ke kamaʻilio broadband, ikehu lā, hana kaʻa, ʻO nā kukui semiconductor, a me ka mākaʻikaʻi akamai, a hiki ke hōʻemi i ka nui o nā mea hana ma mua o 75%, he mea nui ia no ka hoʻomohala ʻana i ka ʻepekema kanaka a me ka ʻenehana.

Hiki i ka ikaika Semicera ke hāʻawi aku i nā mea kūʻai aku me ke kūlana kiʻekiʻe Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; Eia hou, hiki iā mākou ke hāʻawi aku i nā mea kūʻai aku me nā pepa epitaxial silicon carbide homogeneous a heterogeneous; Hiki iā mākou ke hoʻopilikino i ka pepa epitaxial e like me nā pono kikoʻī o nā mea kūʻai aku, a ʻaʻohe palena liʻiliʻi.