Semicerahoʻolauna i ka850V Mana Kiekie GaN-on-Si Epi Wafer, he holomua i ka hana hou semiconductor. Hoʻohui kēia wafer epi holomua i ka hana kiʻekiʻe o Gallium Nitride (GaN) me ke kumu kūʻai o Silicon (Si), e hana ana i kahi hopena ikaika no nā noi kiʻekiʻe-voltage.
Nā mea nui:
•Ka Hana Uila Kiʻekiʻe: Hana ʻia e kākoʻo a hiki i 850V, kūpono kēia GaN-on-Si Epi Wafer no ke koi ʻana i ka uila uila, hiki ke ʻoi aku ka maikaʻi a me ka hana.
•Hoʻonui ʻia ka Mana Mana: Me ka mobility electron kiʻekiʻe a me ka thermal conductivity, ʻae ka ʻenehana GaN i nā hoʻolālā paʻa a me ka hoʻonui ʻana i ka mana.
•Hoʻoponopono Kūʻai Kūʻai: Ma ka hoʻohana ʻana i ke silika ma ke ʻano he substrate, hāʻawi kēia epi wafer i kahi ʻano kumu kūʻai kūpono i nā wafers GaN kuʻuna, me ka ʻole o ka hoʻopaʻapaʻa ʻana i ka maikaʻi a i ʻole ka hana.
•Laulā noi ākea: Kūpono no ka hoʻohana ʻana i nā mea hoʻololi mana, nā mea hoʻonui RF, a me nā mea uila uila mana kiʻekiʻe, e hōʻoia ana i ka hilinaʻi a me ka lōʻihi.
E ʻimi i ka wā e hiki mai ana o ka ʻenehana uila kiʻekiʻe me Semicera's850V Mana Kiekie GaN-on-Si Epi Wafer. Hoʻolālā ʻia no nā noi ʻokiʻoki, hōʻoia kēia huahana i kāu mau mea uila e hana me ka ʻoi aku ka maikaʻi a me ka hilinaʻi. E koho iā Semicera no kāu mau pono semiconductor e hiki mai ana.
| Nā mea | Paahana | Ka noiʻi | Dummy |
| Nā Kūlana Crystal | |||
| Polytype | 4H | ||
| Ua hewa ka hoʻonohonoho ʻana o ka ʻili | <11-20 >4±0.15° | ||
| Nā Kūlana Uila | |||
| Dopant | n-ʻano Nitrogen | ||
| Kū'ē | 0.015-0.025ohm·cm | ||
| Nā Kūlana Mechanical | |||
| Anawaena | 150.0±0.2mm | ||
| mānoanoa | 350±25 μm | ||
| Kūlana pālahalaha mua | [1-100]±5° | ||
| Ka lōʻihi pālahalaha mua | 47.5±1.5mm | ||
| palahalaha lua | ʻAʻohe | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Kakaka | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| 'Oka (AFM) mua (Si-maka) | Ra≤0.2nm (5μm*5μm) | ||
| Hoʻolālā | |||
| Micropipe mānoanoa | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metala haumia | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| ʻAno o mua | |||
| Imua | Si | ||
| Hoʻopau ʻili | Si-maka CMP | ||
| Nā ʻāpana | ≤60ea/wafer (nui≥0.3μm) | NA | |
| Nā ʻōpala | ≤5ea/mm. Ka lōʻihi huila ≤Diameter | ʻO ka lōʻihi huila≤2*Diameter | NA |
| ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination | ʻAʻohe | NA | |
| Nā ʻāpana lihi/indents/fracture/papa hex | ʻAʻohe | ||
| Nā wahi polytype | ʻAʻohe | ʻĀpana huila≤20% | ʻĀpana huila≤30% |
| Hōʻailona laser mua | ʻAʻohe | ||
| ʻAno o hope | |||
| Hoʻopau hope | C-maka CMP | ||
| Nā ʻōpala | ≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena | NA | |
| Nā pōʻino hope (nā ʻāpana lihi/indents) | ʻAʻohe | ||
| ʻōkalakala kua | Ra≤0.2nm (5μm*5μm) | ||
| Hōʻailona laser hope | 1 mm (mai ka lihi luna) | ||
| Kaulana | |||
| Kaulana | Chamfer | ||
| Hoʻopili ʻia | |||
| Hoʻopili ʻia | Epi-mākaukau me ka hoʻopaʻa ʻumeke Puke cassette nui-wafer | ||
| *Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD. | |||
