8 iniha n-type Conductive SiC Substrate

ʻO ka wehewehe pōkole:

8-inihi n-type SiC substrate he n-type silicon carbide (SiC) one crystal substrate me ke anawaena mai 195 a 205 mm a me ka mānoanoa mai 300 a 650 microns. Loaʻa i kēia substrate kahi manaʻo doping kiʻekiʻe a me kahi kiʻi hoʻonaʻauao i hoʻopaʻa pono ʻia, e hāʻawi ana i ka hana maikaʻi loa no nā ʻano noi semiconductor.

 


Huahana Huahana

Huahana Huahana

Hāʻawi ka 8 lnch n-type Conductive SiC Substrate i ka hana like ʻole no nā mea uila uila, e hāʻawi ana i ka conductivity thermal maikaʻi loa, ka uila haʻihaʻi kiʻekiʻe a me ka maikaʻi maikaʻi loa no nā noi semiconductor holomua. Hāʻawi ʻo Semicera i nā ʻōnaehana alakaʻi alakaʻi me kāna ʻenehana 8 lnch n-type Conductive SiC Substrate.

ʻO Semicera's 8 lnch n-type Conductive SiC Substrate he mea ʻokiʻoki i hoʻolālā ʻia e hoʻokō i nā koi ulu o ka uila uila a me nā noi semiconductor kiʻekiʻe. Hoʻohui ka substrate i nā pono o ka silicon carbide a me n-type conductivity e hāʻawi i ka hana like ʻole i nā mea pono e koi ai i ka mana kiʻekiʻe, ka wela wela, a me ka hilinaʻi.

Hana maikaʻi ʻia ʻo Semicera's 8 lnch n-type Conductive SiC Substrate e hōʻoia i ka maikaʻi a me ka kūlike. Hōʻike ia i ka conductivity thermal maikaʻi loa no ka hoʻoheheʻe ʻana i ka wela, e hana ia i mea kūpono no nā noi mana kiʻekiʻe e like me nā mana inverters, diodes, a me nā transistors. Hoʻohui hou, ʻo kēia substrate ka mea hiki ke pale i nā kūlana koi, e hāʻawi ana i kahi kahua paʻa no nā uila hana kiʻekiʻe.

ʻIke ʻo Semicera i ke kuleana koʻikoʻi a 8 lnch n-type Conductive SiC Substrate e pāʻani nei i ka holomua o ka ʻenehana semiconductor. Hana ʻia kā mākou substrates me ka hoʻohana ʻana i nā kaʻina hana hou e hōʻoia i ka liʻiliʻi o ka defect density, kahi mea koʻikoʻi i ka hoʻomohala ʻana i nā mea pono. ʻO kēia ka nānā ʻana i nā kikoʻī e hiki ai i nā huahana ke kākoʻo i ka hana ʻana o nā mea uila e hiki mai ana me ka hana kiʻekiʻe a me ka lōʻihi.

Hoʻolālā ʻia kā mākou 8 lnch n-type Conductive SiC Substrate no ka hoʻokō ʻana i nā pono o kahi ākea o nā noi mai ka automotive a hiki i ka ikehu hou. Hāʻawi ka conductivity n-type i nā waiwai uila e pono ai no ka hoʻomohala ʻana i nā mana mana kūpono, e hana ana i kēia substrate i mea koʻikoʻi i ka hoʻololi ʻana i nā ʻenehana ʻoi aku ka ikaika o ka ikehu.

Ma Semicera, ua kūpaʻa mākou i ka hāʻawi ʻana i nā substrates e hoʻokau i ka hana hou i ka hana semiconductor. ʻO ka 8 lnch n-type Conductive SiC Substrate kahi hōʻike i ko mākou hoʻolaʻa ʻana i ka maikaʻi a me ka maikaʻi, e hōʻoiaʻiʻo ana i kā mākou mea kūʻai aku e loaʻa i nā mea kūpono loa no kā lākou noi.

Nā palena kumu

Nui 8-iniha
Anawaena 200.0mm+0mm/-0.2mm
Kūlana ʻili koʻikoʻi:4° i ka <1120>士0.5°
Kūlana Notch <1100> 1°
ʻĀneki ʻAiʻa 90°+5°/-1°
Hohonu Notch 1mm+0.25mm/-0mm
Pāpā lua /
mānoanoa 500.0士25.0um/350.0±25.0um
Polytype 4H
ʻAno Conductive n-ʻano
8lnch n-type sic substrate-2
SiC wafers

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