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SiC-Coated Semiconductor Epitaxial Reactor no ka Epitaxial Reactor Chamber

ʻO SiC-Coated Semiconductor Epitaxial Reactor no ka Epitaxial Reactor Chamber i hōʻike ʻia
  • SiC-Coated Semiconductor Epitaxial Reactor no ka Epitaxial Reactor Chamber

ʻO ka wehewehe pōkole:

Hāʻawi ʻo Semicera i kahi ākea o nā susceptors a me nā ʻāpana graphite i hoʻolālā ʻia no nā reactors epitaxy like ʻole.

Ma o ka launa pū ʻana me nā OEM alakaʻi i ka ʻoihana, ka ʻike loea nui, a me ka hiki ke hana kiʻekiʻe, hāʻawi ʻo Semicera i nā hoʻolālā kūpono e hoʻokō i nā koi kikoʻī o kāu noi. ʻO kā mākou kūpaʻa i ka maikaʻi e hōʻoia e loaʻa iā ʻoe nā hopena maikaʻi loa no kāu epitaxy reactor pono.

 

 


Huahana Huahana

Huahana Huahana

Hāʻawi kā mākou huiKa uhi ʻana o SiCkaʻina hana ma ka ʻili o ka graphite, keramika a me nā mea ʻē aʻe ma ke ʻano CVD, i hiki i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika ke hana i ka wela kiʻekiʻe e loaʻa ai nā molekala Sic maʻemaʻe kiʻekiʻe, hiki ke waiho ʻia ma ka ʻili o nā mea i uhi ʻia e hana i kahiSiC pale paleno ka epitaxy barrel type hy pnotic.

 

Nā hiʻohiʻona nui:

1 .High maemae SiC uhi graphite

2. ʻOi aku ka maikaʻi o ka wela a me ke kūlike o ka wela

3. MaikaʻiUa uhi ʻia ʻo SiC crystalno ka ili pahee

4. Kiʻekiʻe ka lōʻihi e kū'ē i ka hoʻomaʻemaʻe kemika

 
Barrel Susceptor (6)

Nā kikoʻī nui oKa uhi ʻana o CVD-SIC

Nā Waiwai SiC-CVD
Hoʻokumu Crystal Māhele FCC β
ʻO ka mānoanoa g/cm ³ 3.21
ʻoʻoleʻa ʻO ka paʻakikī o Vickers 2500
Ka nui o ka palaoa μm 2~10
Maemae Kemika % 99.99995
Kaha Wela J·kg-1 ·K-1 640
Mahana Sublimation ℃ 2700
Ikaika Felexural MPa (RT 4-point) 415
ʻO Young's Modulus Gpa (4pt piko, 1300 ℃) 430
Hoʻonui wela (CTE) 10-6K-1 4.5
ʻO ke kau wela wela (W/mK) 300

 

 
2--cvd-sic-maʻemaʻe---99-99995-_60366
5----sic-crystal_242127
Kahi hana Semicera
Kahi hana Semicera 2
mīkini lako
ʻO ka hana CNN, hoʻomaʻemaʻe kemika, ka uhi CVD
ʻO kā mākou lawelawe
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