Semicerahaʻaheo e hōʻike i kona ʻokiʻokiGaN Epitaxynā lawelawe, i hoʻolālā ʻia e hoʻokō i nā pono e ulu mau ana o ka ʻoihana semiconductor. ʻO Gallium nitride (GaN) kahi mea i ʻike ʻia no kāna mau waiwai kūʻokoʻa, a ʻo kā mākou kaʻina ulu epitaxial e hōʻoia i ka hoʻokō piha ʻana o kēia mau pono i kāu mau polokalamu.
Nā Layer GaN Hana Kiʻekiʻe Semicerakūikawā i ka hana ʻana i nā mea kiʻekiʻeGaN Epitaxynā papa, e hāʻawi ana i ka hoʻomaʻemaʻe waiwai ʻole a me ka pololei o ke kūkulu ʻana. He mea koʻikoʻi kēia mau papa no nā noi like ʻole, mai ka uila uila a hiki i ka optoelectronics, kahi e pono ai ka hana ʻoi aku ka maikaʻi a me ka hilinaʻi. ʻO kā mākou ʻenehana ulu pololei e hōʻoia i kēlā me kēia papa GaN e hoʻokō i nā kūlana kūpono i koi ʻia no nā mea ʻoki ʻoki.
Hoʻonui ʻia no ka ponoʻO kaGaN Epitaxyhāʻawi ʻia e Semicera i hoʻonohonoho pono ʻia e hoʻomaikaʻi i ka pono o kāu mau mea uila. Ma ka hāʻawi ʻana i nā papa GaN haʻahaʻa haʻahaʻa, hoʻomaʻemaʻe kiʻekiʻe, hiki iā mākou ke hana i nā mea hana i nā alapine kiʻekiʻe a me nā voltages, me ka emi ʻana o ka mana. He kī kēia no nā noi e like me nā transistors high-electron-mobility (HEMTs) a me nā diodes light-emitting (LEDs), kahi i ʻoi aku ka maikaʻi.
Loaʻa i nā mea hoʻohana nui Semicera'sGaN Epitaxyhe mea maʻalahi, e mālama ana i kahi ākea o nā ʻoihana a me nā noi. Ke hoʻomohala nei ʻoe i nā mea hoʻonui mana, nā ʻāpana RF, a i ʻole nā diodes laser, hāʻawi kā mākou GaN epitaxial layers i ke kumu e pono ai no nā mea hana kiʻekiʻe a hilinaʻi. Hiki ke hoʻopili ʻia kā mākou kaʻina hana e hoʻokō i nā koi kikoʻī, e hōʻoia i ka loaʻa ʻana o kāu huahana i nā hopena maikaʻi loa.
Hoʻoholo i ka maikaʻiʻO ka maikaʻi ka pōhaku kihi oSemicera'o ka hookokoke ana maiGaN Epitaxy. Hoʻohana mākou i nā ʻenehana ulu epitaxial kiʻekiʻe a me nā kaʻina hoʻomalu maikaʻi e hana i nā papa GaN e hōʻike ana i ka kūlike maikaʻi loa, nā haʻahaʻa haʻahaʻa haʻahaʻa, a me nā waiwai waiwai. ʻO kēia kūpaʻa i ka maikaʻi e hōʻoiaʻiʻo ʻaʻole i hui wale kāu mau hāmeʻa akā ʻoi aku i nā kūlana ʻoihana.
Nā ʻenehana ulu hou Semiceraaia ma ke alo o ka hana hou ma ke kahua oGaN Epitaxy. Ke ʻimi mau nei kā mākou hui i nā ʻano a me nā ʻenehana hou e hoʻomaikaʻi ai i ke kaʻina ulu, e hāʻawi ana i nā papa GaN me nā hiʻohiʻona uila a me ka wela. Hoʻololi kēia mau mea hou i nā mea hana ʻoi aku ka maikaʻi, hiki ke hoʻokō i nā koi o nā noi o nā hanauna e hiki mai ana.
Nā Hoʻoponopono Hoʻopilikino no kāu mau papahanaʻO ka ʻike ʻana he pono kūʻokoʻa kēlā me kēia papahana,Semicerahāʻawi maʻamauGaN Epitaxynā hoʻonā. Inā makemake ʻoe i nā kikoʻī doping kikoʻī, ka mānoanoa o ka papa, a i ʻole ka hoʻopau ʻana i ka ʻili, hana pū mākou me ʻoe e hoʻomohala i kahi kaʻina e kūpono i kāu mau pono. ʻO kā mākou pahuhopu ka hāʻawi ʻana iā ʻoe i nā papa GaN i hoʻonohonoho pono ʻia e kākoʻo i ka hana a me ka hilinaʻi o kāu hāmeʻa.
Nā mea | Paahana | Ka noiʻi | Dummy |
Nā Kūlana Crystal | |||
Polytype | 4H | ||
Ua hewa ka hoʻonohonoho ʻana o ka ʻili | <11-20 >4±0.15° | ||
Nā Kūlana Uila | |||
Dopant | n-ʻano Nitrogen | ||
Kū'ē | 0.015-0.025ohm·cm | ||
Nā Kūlana Mechanical | |||
Anawaena | 150.0±0.2mm | ||
mānoanoa | 350±25 μm | ||
Kūlana pālahalaha mua | [1-100]±5° | ||
Ka lōʻihi pālahalaha mua | 47.5±1.5mm | ||
palahalaha lua | ʻAʻohe | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Kakaka | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
'Oka (AFM) mua (Si-maka) | Ra≤0.2nm (5μm*5μm) | ||
Hoʻolālā | |||
Micropipe mānoanoa | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Metala haumia | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
ʻAno o mua | |||
Imua | Si | ||
Hoʻopau ʻili | Si-maka CMP | ||
Nā ʻāpana | ≤60ea/wafer (nui≥0.3μm) | NA | |
Nā ʻōpala | ≤5ea/mm. Ka lōʻihi huila ≤Diameter | ʻO ka lōʻihi huila≤2*Diameter | NA |
ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination | ʻAʻohe | NA | |
Nā ʻāpana lihi/indents/fracture/papa hex | ʻAʻohe | ||
Nā wahi polytype | ʻAʻohe | ʻĀpana huila≤20% | ʻĀpana huila≤30% |
Hōʻailona laser mua | ʻAʻohe | ||
ʻAno o hope | |||
Hoʻopau hope | C-maka CMP | ||
Nā ʻōpala | ≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena | NA | |
Nā pōʻino hope (nā ʻāpana lihi/indents) | ʻAʻohe | ||
ʻōkalakala kua | Ra≤0.2nm (5μm*5μm) | ||
Hōʻailona laser hope | 1 mm (mai ka lihi luna) | ||
Kaulana | |||
Kaulana | Chamfer | ||
Hoʻopili ʻia | |||
Hoʻopili ʻia | Epi-mākaukau me ka hoʻopaʻa ʻumeke Puke cassette nui-wafer | ||
*Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD. |