GaN Epitaxy

ʻO ka wehewehe pōkole:

ʻO GaN Epitaxy kahi pōhaku kihi i ka hana ʻana i nā mea hana semiconductor kiʻekiʻe, e hāʻawi ana i ka maikaʻi maikaʻi loa, ke kūpaʻa wela, a me ka hilinaʻi. Hoʻopili ʻia nā ʻōnaehana GaN Epitaxy o Semicera e hoʻokō i nā koi o nā noi ʻokiʻoki, e hōʻoia ana i ka maikaʻi a me ka kūlike i kēlā me kēia papa.


Huahana Huahana

Huahana Huahana

Semicerahaʻaheo e hōʻike i kona ʻokiʻokiGaN Epitaxynā lawelawe, i hoʻolālā ʻia e hoʻokō i nā pono e ulu mau ana o ka ʻoihana semiconductor. ʻO Gallium nitride (GaN) kahi mea i ʻike ʻia no kāna mau waiwai kūʻokoʻa, a ʻo kā mākou kaʻina ulu epitaxial e hōʻoia i ka hoʻokō piha ʻana o kēia mau pono i kāu mau polokalamu.

Nā Layer GaN Hana Kiʻekiʻe Semiceraloea i ka hana ʻana i nā mea kiʻekiʻeGaN Epitaxynā papa, e hāʻawi ana i ka hoʻomaʻemaʻe waiwai ʻole a me ka pololei o ke kūkulu ʻana. He mea koʻikoʻi kēia mau papa no nā noi like ʻole, mai ka uila uila a hiki i ka optoelectronics, kahi e pono ai ka hana ʻoi aku ka maikaʻi a me ka hilinaʻi. ʻO kā mākou ʻenehana ulu pololei e hōʻoia i kēlā me kēia papa GaN e hoʻokō i nā kūlana kūpono i koi ʻia no nā mea ʻoki ʻoki.

Hoʻonui ʻia no ka ponoʻO kaGaN Epitaxyhāʻawi ʻia e Semicera i hoʻonohonoho pono ʻia e hoʻomaikaʻi i ka pono o kāu mau mea uila. Ma ka hāʻawi ʻana i nā papa GaN haʻahaʻa haʻahaʻa, hoʻomaʻemaʻe kiʻekiʻe, hiki iā mākou ke hana i nā mea hana i nā alapine kiʻekiʻe a me nā voltages, me ka emi ʻana o ka mana. He kī kēia no nā noi e like me nā transistors high-electron-mobility (HEMTs) a me nā diodes light-emitting (LEDs), kahi i ʻoi aku ka maikaʻi.

Loaʻa i nā mea hoʻohana nui Semicera'sGaN Epitaxyhe mea maʻalahi, e mālama ana i kahi ākea o nā ʻoihana a me nā noi. Inā ʻoe e hoʻomohala nei i nā mea hoʻonui mana, nā ʻāpana RF, a i ʻole nā ​​diodes laser, hāʻawi kā mākou GaN epitaxial layer i ke kumu e pono ai no nā mea hana kiʻekiʻe a hilinaʻi. Hiki ke hoʻopili ʻia kā mākou kaʻina hana e hoʻokō i nā koi kikoʻī, e hōʻoia i ka loaʻa ʻana o kāu huahana i nā hopena maikaʻi loa.

Hoʻoholo i ka maikaʻiʻO ka maikaʻi ka pōhaku kihi oSemicera'o ka hookokoke ana maiGaN Epitaxy. Hoʻohana mākou i nā ʻenehana ulu epitaxial kiʻekiʻe a me nā kaʻina hoʻomalu maikaʻi e hana i nā papa GaN e hōʻike ana i ka kūlike maikaʻi loa, nā haʻahaʻa haʻahaʻa haʻahaʻa, a me nā waiwai waiwai. ʻO kēia kūpaʻa i ka maikaʻi e hōʻoiaʻiʻo ʻaʻole i hui wale kāu mau hāmeʻa akā ʻoi aku i nā kūlana ʻoihana.

Nā ʻenehana ulu hou Semiceraaia ma ke alo o ka hana hou ma ke kahua oGaN Epitaxy. Ke ʻimi mau nei kā mākou hui i nā ʻano a me nā ʻenehana hou e hoʻomaikaʻi ai i ke kaʻina ulu, e hāʻawi ana i nā papa GaN me nā hiʻohiʻona uila a me ka wela. Hoʻololi kēia mau mea hou i nā mea hana ʻoi aku ka maikaʻi, hiki ke hoʻokō i nā koi o nā noi o nā hanauna e hiki mai ana.

Nā Hoʻoponopono Hoʻopilikino no kāu mau papahanaʻO ka ʻike ʻana he pono kūʻokoʻa kēlā me kēia papahana,Semicerahāʻawi maʻamauGaN Epitaxynā hoʻonā. Inā makemake ʻoe i nā kikoʻī doping kikoʻī, ka mānoanoa o ka papa, a i ʻole ka hoʻopau ʻana i ka ʻili, hana pū mākou me ʻoe e hoʻomohala i kahi kaʻina e kūpono i kāu mau pono. ʻO kā mākou pahuhopu ka hāʻawi ʻana iā ʻoe i nā papa GaN i hoʻonohonoho pono ʻia e kākoʻo i ka hana a me ka hilinaʻi o kāu hāmeʻa.

Nā mea

Paahana

Ka noiʻi

Dummy

Nā Kūlana Crystal

Polytype

4H

Ua hewa ka hoʻonohonoho ʻana o ka ʻili

<11-20 >4±0.15°

Nā Kūlana Uila

Dopant

n-ʻano Nitrogen

Kū'ē

0.015-0.025ohm·cm

Nā Kūlana Mechanical

Anawaena

150.0±0.2mm

mānoanoa

350±25 μm

Kūlana pālahalaha mua

[1-100]±5°

Ka lōʻihi pālahalaha mua

47.5±1.5mm

palahalaha lua

ʻAʻohe

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Kakaka

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

'Oka (AFM) mua (Si-maka)

Ra≤0.2nm (5μm*5μm)

Hoʻolālā

Micropipe mānoanoa

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metala haumia

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

ʻAno o mua

Imua

Si

Hoʻopau ʻili

Si-maka CMP

Nā ʻāpana

≤60ea/wafer (nui≥0.3μm)

NA

Nā ʻōpala

≤5ea/mm. Ka lōʻihi huila ≤Diameter

ʻO ka lōʻihi huila≤2*Diameter

NA

ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination

ʻAʻohe

NA

Nā ʻāpana lihi/indents/fracture/papa hex

ʻAʻohe

Nā wahi polytype

ʻAʻohe

ʻĀpana huila≤20%

ʻĀpana huila≤30%

Hōʻailona laser mua

ʻAʻohe

ʻAno o hope

Hoʻopau hope

C-maka CMP

Nā ʻōpala

≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena

NA

Nā hemahema o hope (nā ʻāpana lihi/indents)

ʻAʻohe

ʻōkalakala kua

Ra≤0.2nm (5μm*5μm)

Hōʻailona laser hope

1 mm (mai ka lihi luna)

Kaulana

Kaulana

Chamfer

Hoʻopili ʻia

Hoʻopili ʻia

Epi-mākaukau me ka hoʻopaʻa ʻumeke

Puke cassette nui-wafer

*Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD.

tech_1_2_size
SiC wafers

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