ʻO SiC Carrier/Susceptor maʻemaʻe kiʻekiʻe

ʻO ka wehewehe pōkole:

Ua ʻike ʻia ʻo SIC tray, silicon carbide etching disc, ICP etching disc. Silicon carbide tray for LED etching (SiC tray) φ600mm he mea kōkua kūikawā no ka hohonu silicon etching (ICP etching machine).

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

wehewehe

Loaʻa i ka silikon carbide ceramics nā waiwai mechanical maikaʻi loa i ka lumi lumi, e like me ka ikaika kiʻekiʻe, ka paʻakikī kiʻekiʻe, ka modulus elastic kiʻekiʻe, a me nā mea ʻē aʻe, he kūlana paʻa kiʻekiʻe kiʻekiʻe e like me ke kiʻekiʻe thermal conductivity, haʻahaʻa thermal expansion coefficient, a me ka ʻoʻoleʻa kikoʻī a me ka optical. hana hana.
He kūpono loa ia no ka hana ʻana i nā ʻāpana seramika pololei no nā mea hana kaapuni i hoʻohui ʻia e like me nā mīkini lithography, i hoʻohana nui ʻia no ka hana ʻana i ka mea lawe / susceptor SiC, wafer wafer SiC, ka ʻū ʻana disc, ka pā wai hoʻoheheʻe wai, ke ana ʻana i ka mea hoʻohālikelike, ka grating a me nā ʻāpana hana seramika.

lawe lawe2

lawe lawe3

lawe lawe4

Nā pono

Palena wela kiʻekiʻe: hoʻohana maʻamau ma 1800 ℃
ʻO ke kau wela wela kiʻekiʻe: e like me ka mea graphite
ʻO ka paʻakikī kiʻekiʻe: ʻo ka ʻoi aku ka lua ma mua o ke daimana, boron nitride
ʻO ke kūpaʻa ʻana: ʻoi aku ka maikaʻi o ka ʻakika ikaika a me ka alkali, ʻoi aku ka maikaʻi o ka pale ʻana ma mua o ka tungsten carbide a me ka alumina.
Kaumaha māmā: haʻahaʻa haʻahaʻa, kokoke i ka alumini
ʻAʻohe deformation: ka helu haʻahaʻa o ka hoʻonui wela
ʻO ke kūpaʻa haʻalulu wela: hiki iā ia ke pale i nā loli wela ʻoi, pale i ka haʻalulu wela, a paʻa ka hana
Hoʻohana nui ʻia ka mea lawe kalapona silika e like me ka sic etching carrier, ICP etching susceptor, i ka semiconductor CVD, vacuum sputtering etc. Hiki iā mākou ke hāʻawi i nā mea kūʻai aku i nā mea lawe wafer maʻamau o nā mea silika a me nā mea carbide silicon e hālāwai me nā noi like ʻole.

Nā pono

Waiwai	Waiwai	ʻano hana
ʻO ka mānoanoa	3.21 g/cc	Piko-lele a me ke ana
wela kūikawā	0.66 J/g °K	Pulsed laser flash
Ka ikaika wiliwili	450 MPa560 MPa	4 piko piko, RT4 piko piko, 1300°
ʻOoleʻa haʻihaʻi	2.94 MPa m1/2	Microindentation
ʻoʻoleʻa	2800	ʻO Vicker, 500g ukana
Elastic ModulusYoung's Modulus	450 GPa430 GPa	4 pt piko, RT4 pt piko, 1300 °C
Ka nui o ka palaoa	2 – 10 µm	SEM

ʻIkepili Hui

ʻO WeiTai Energy Technology Co., Ltd. kahi mea hoʻolako alakaʻi o nā seramika semiconductor kiʻekiʻe a ʻo ka mea hana wale nō ma Kina e hiki ke hāʻawi like i ka silicon carbide ceramic maʻemaʻe kiʻekiʻe (ʻoi aku ka Recrystallized SiC) a me ka uhi CVD SiC. Eia kekahi, ua paʻa pū kā mākou hui i nā māla seramika e like me ke alumina, alumini nitride, zirconia, a me ka silicon nitride, etc.

ʻO kā mākou huahana nui e like me: silicon carbide etching disc, silicon carbide boat tow, silicon carbide wafer boat (Photovoltaic & Semiconductor), silicon carbide furnace tube, silicon carbide cantilever hoe, silicon carbide chucks, silicon carbide beam, a me ka CVD SiC coating a me TaC ka uhi ʻana. ʻO nā huahana i hoʻohana nui ʻia i ka semiconductor a me nā ʻoihana photovoltaic, e like me nā mea hana no ka ulu kristal, epitaxy, etching, packaging, coating and diffusion furnaces, etc.
e pili ana i (2)