Semicera Maʻemaʻe KiʻekiʻeHoe Silicon Carbideua hana ʻia meticulously e hoʻokō i nā koi koʻikoʻi o nā kaʻina hana semiconductor hou. ʻO kēiaSiC Cantilever hoeʻoi aku ka maikaʻi ma nā wahi wela kiʻekiʻe, e hāʻawi ana i ka paʻa wela like ʻole a me ka lōʻihi mechanical. Kūkulu ʻia ka hale ʻo SiC Cantilever e kū i nā kūlana koʻikoʻi, e hōʻoiaʻiʻo ana i ka lawelawe ʻana i ka wafer hilinaʻi ma nā kaʻina hana like ʻole.
ʻO kekahi o nā mea hou nui o kaSiC hoeʻO kāna hoʻolālā māmā akā paʻa, e hiki ai ke hoʻohui maʻalahi i nā ʻōnaehana i loaʻa. ʻO kāna conductivity thermal kiʻekiʻe e kōkua i ka mālama ʻana i ke kūpaʻa wafer i nā wā koʻikoʻi e like me ka etching a me ka deposition, e hōʻemi ana i ka hopena o ka pōʻino wafer a me ka hōʻoia ʻana i nā hua kiʻekiʻe. ʻO ka hoʻohana ʻana i ka silicon carbide kiʻekiʻe i ke kūkulu ʻana i ka hoe e hoʻonui i kona kūʻē ʻana i ka ʻaʻahu a me ka waimaka, e hāʻawi ana i ke ola hana lōʻihi a me ka hoʻemi ʻana i ka pono no nā pani pinepine.
Ke kau nei ʻo Semicera i kahi manaʻo nui i ka hana hou, e hāʻawi ana i kahiSiC Cantilever hoeʻaʻole ia e hui wale akā ʻoi aku ma mua o nā kūlana ʻoihana. Hoʻolālā ʻia kēia hoe no ka hoʻohana ʻana i nā noi semiconductor like ʻole, mai ka waiho ʻana a hiki i ka etching, kahi mea koʻikoʻi ka pololei a me ka hilinaʻi. Ma ka hoʻohui ʻana i kēia ʻenehana ʻokiʻoki, hiki i nā mea hana ke manaʻo i ka hoʻomaikaʻi maikaʻi ʻana, hoʻemi ʻia nā kumukūʻai mālama, a me ka maikaʻi o ka huahana.
Nā waiwai kino o Recrystallized Silicon Carbide | |
Waiwai | Waiwai maʻamau |
Mahana hana (°C) | 1600°C (me ka oxygen), 1700°C (hoemi kaiapuni) |
maʻiʻo SiC | > 99.96% |
Maikaʻi Si manuahi | < 0.1% |
ʻAno nui | 2.60-2.70 g/cm3 |
ʻIke ʻia ka porosity | < 16% |
Ka ikaika hoʻoemi | > 600 MPa |
Ka ikaika kulou anu | 80-90 MPa (20°C) |
Ka ikaika piko wela | 90-100 MPa (1400°C) |
Hoʻonui wela @1500°C | 4.70 10-6/°C |
ʻO ka wela wela @1200°C | 23 W/m•K |
Modulus elastic | 240 GPa |
Ke kū'ē i ka ha'alulu wela | Maikaʻi loa |