Hāʻawi ʻo Semicera i ka hana maʻamau kiʻekiʻenā hoe hoʻoheheʻe kalapona silikahana ʻia e hoʻokiʻekiʻe i nā kaʻina hana semiconductor. ʻO ka mea houhoe SiCʻO ka hoʻolālā e hōʻoia i ka lōʻihi a me ke kūpaʻa wela kiʻekiʻe, e lilo ia i mea koʻikoʻi no ka lawelawe ʻana i ka wafer i nā kaiapuni wela kiʻekiʻe.
ʻO kaʻO ka hoe silikoniua kūkulu ʻia e pale i nā pōʻai wela loa i ka wā e mālama ana i ka kūpaʻa o ke kūkulu ʻana, e hōʻoiaʻiʻo ana i ka halihali wafer hilinaʻi i nā wā koʻikoʻi o ka hana semiconductor. Me ka ikaika mechanical oi, keiawaʻa waʻae hōʻemi i ka pōʻino o nā wafers, e alakaʻi ana i nā hua kiʻekiʻe a me ka maikaʻi o ka hana ʻana.
ʻO kekahi o nā mea hou nui i ka hoe SiC o Semicera aia i kāna mau koho hoʻolālā maʻamau. Hoʻopili ʻia e hoʻokō i nā pono hana kikoʻī, hāʻawi ka hoe i ka maʻalahi i ka hoʻohui ʻana me nā hoʻonohonoho lako like ʻole, e lilo ia i hopena kūpono no nā kaʻina hana hana hou. Hiki i ka hana maʻalahi a paʻa i ka maʻalahi a hoʻemi i ka downtime hana, e hāʻawi ana i ka hoʻomaikaʻi ʻana i ka hana semiconductor.
Ma waho aʻe o kāna mau mea wela a me ka mechanical, kaʻO ka hoe silikonihāʻawi i ke kūpaʻa kemika maikaʻi loa, hiki iā ia ke hana me ka hilinaʻi ʻoiai ma nā wahi kemika paʻakikī. He mea kūpono kēia no ka hoʻohana ʻana i nā kaʻina hana e pili ana i ka etching, deposition, a me ka mālama wela kiʻekiʻe, kahi e mālama ai i ka pono o ka wafer waʻa he mea koʻikoʻi no ka hōʻoia ʻana i nā huahana kiʻekiʻe.
| Nā waiwai kino o Recrystallized Silicon Carbide | |
| Waiwai | Waiwai maʻamau |
| Mahana hana (°C) | 1600°C (me ka oxygen), 1700°C (hoemi kaiapuni) |
| maʻiʻo SiC | > 99.96% |
| Maikaʻi Si manuahi | < 0.1% |
| ʻAno nui | 2.60-2.70 g/cm3 |
| ʻIke ʻia ka porosity | < 16% |
| Ka ikaika hoʻoemi | > 600 MPa |
| Ka ikaika kulou anu | 80-90 MPa (20°C) |
| Ka ikaika piko wela | 90-100 MPa (1400°C) |
| Hoʻonui wela @1500°C | 4.70 10-6/°C |
| ʻO ka wela wela @1200°C | 23 W/m•K |
| Modulus elastic | 240 GPa |
| Ke kū'ē i ka ha'alulu wela | Maikaʻi loa |
