Kiʻekiʻe kiʻekiʻe a me ka corrosion pale ʻia ʻo LED Silicon Carbide etching tray (ICP etching tray)

Kiʻekiʻe wela a me ka corrosion kū'ē i LED Silicon Carbide etching tray (ICP etching tray) Featured Image

ʻO ka wehewehe pōkole:

ʻO Semicera Energy Technology Co., Ltd. kahi mea hoʻolako alakaʻi kūikawā i ka wafer a me nā mea hoʻohana semiconductor holomua.Hoʻolaʻa mākou i ka hāʻawi ʻana i nā huahana kiʻekiʻe, hilinaʻi, a me nā mea hou i ka hana semiconductor,ʻoihana photovoltaica me nā kahua ʻē aʻe e pili ana.

Loaʻa i kā mākou laina huahana nā huahana graphite i uhi ʻia ʻo SiC/TaC a me nā huahana seramika, e hoʻopuni ana i nā mea like ʻole e like me ka silicon carbide, silicon nitride, a me ka alumini oxide a me nā mea ʻē aʻe.

Ma keʻano he mea hoʻolako hilinaʻi, hoʻomaopopo mākou i ke koʻikoʻi o nā mea hoʻohana i ka hana hana, a ua kūpaʻa mākou i ka hāʻawiʻana i nā huahana i kūpono i nā kūlana kiʻekiʻe loa e hoʻokō i nā pono o kā mākou mea kūʻai.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Hōʻike huahana

Hāʻawi kā mākou hui i nā lawelawe kaʻina hana hoʻoheheʻe SiC ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe. e hana ana i ka papa pale SIC.

Nā hiʻohiʻona nui:

1. Kiʻekiʻe wela oxidation kū'ē:

ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.

2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.

3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.

4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.

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Nā kiko'ī nui o ka CVD-SIC Coating

Nā Waiwai SiC-CVD
Hoʻokumu Crystal	Māhele FCC β
ʻO ka mānoanoa	g/cm ³	3.21
ʻoʻoleʻa	ʻO ka paʻakikī o Vickers	2500
Ka nui o ka palaoa	μm	2~10
Maemae Kemika	%	99.99995
Kaha Wela	J·kg-1 ·K-1	640
Mahana Sublimation	℃	2700
Ikaika Felexural	MPa (RT 4-point)	415
ʻO Young's Modulus	Gpa (4pt piko, 1300 ℃)	430
Hoʻonui wela (CTE)	10-6K-1	4.5
ʻO ke kau wela wela	(W/mK)	300