Me ko SemiceraInP a me CdTe substrate, hiki iā ʻoe ke manaʻo i ka maikaʻi a me ka pololei i hana ʻia e hoʻokō i nā pono kikoʻī o kāu kaʻina hana. Inā no nā noi photovoltaic a i ʻole nā mea semiconductor, ua hana ʻia kā mākou substrates e hōʻoia i ka hana maikaʻi loa, ka lōʻihi, a me ke kūlike. Ma ke ʻano he mea hoʻolako hilinaʻi, ua kūpaʻa ʻo Semicera i ka hāʻawi ʻana i nā ʻōnaehana substrate kiʻekiʻe, hiki ke hoʻoikaika i ka hana hou i ka ʻenehana uila a me nā ʻāpana ikehu hou.
Na Waiwai Crystalline a me Uila✽1
| ʻAno | Dopant | EPD(cm–2）（E nānā ma lalo o A.） | DF （Hōʻokoʻa kīnā） wahi（cm2, E nānā ma lalo B.） | c/（c kenimika–3） | Moʻa (y cm2/Vs） | Kū'ē (y Ω・cm) |
| n | Sn | ≦5×104 ≦1×104 ≦5×103 | ────── | （0.5〜6）×1018 | ────── | ────── |
| n | S | ────── | ≧ 10（59.4%） ≧ 15（87%）.4 | （2〜10）×1018 | ────── | ────── |
| p | Zn | ────── | ≧ 10（59.4%） ≧ 15（87%）. | （3〜6）×1018 | ────── | ────── |
| SI | Fe | ≦5×104 ≦1×104 | ────── | ────── | ────── | ≧ 1×106 |
| n | ʻaʻohe | ≦5×104 | ────── | ≦1×1016 | ≧ 4×103 | ────── |
✽1 Loaʻa nā kikoʻī ʻē aʻe ma ke noi.
A.13 Puka Awelika
1. Ana 'ia ka nui o ka lua etch dislocation ma 13 kiko.
2. Ua helu 'ia ka 'awelika kaumaha o ka 'āpana o ka dislocation.
Ana ʻĀpana B.DF
1. Ua helu ʻia nā mānoanoa lua etch o 69 i hōʻike ʻia ma ke ʻano he ʻākau.
2. Ua wehewehe ʻia ʻo DF he EPD ma lalo o 500cm–2
3. ʻO 17.25cm ka nui o ka ʻāpana DF i ana ʻia e kēia ʻano hana2
InP Single Crystal Substrates Nā kikoʻī maʻamau
1. Kūlana
ʻO ke ʻano o ka ʻili (100)±0.2º a i ʻole (100)±0.05º
Loaʻa ka ʻaoʻao o waho ma ke noi.
Ke kuhi o ka palahalaha OF : (011)±1º a i ʻole (011)±0.1º IF : (011)±2º
Loaʻa ka Cleaved OF ma ke noi.
2. Loaʻa ka hōʻailona laser ma muli o ke kūlana SEMI.
3. Loaʻa ka pūʻolo pākahi, a me ka pūʻolo ma ke kinoea N2.
4. Loaʻa ka Etch-and-pack i ke kinoea N2.
5. Loaʻa nā wafers rectangular.
ʻO ka mea kikoʻī ma luna o JX 'maʻamau.
Inā makemake ʻia nā kikoʻī ʻē aʻe, e ʻoluʻolu e nīnau mai iā mākou.
Kūlana
