Noiʻi hope
Koikoʻi o ka hoʻohana ʻana i ka silicon carbide (SiC): Ma ke ʻano he bandgap semiconductor material, silicon carbide i hoihoi nui ʻia ma muli o kāna mau waiwai uila maikaʻi loa (e like me ka bandgap nui, ka wikiwiki saturation electron kiʻekiʻe a me ka conductivity thermal). Hoʻohana nui ʻia kēia mau waiwai i ka hana kiʻekiʻe-frequency, kiʻekiʻe-mehana a me ka mana kiʻekiʻe, ʻoi aku hoʻi ma ke kahua o ka uila uila.
ʻO ka hopena o nā pōʻino kristal: ʻOiai kēia mau mea maikaʻi o SiC, ʻo nā hemahema i loko o nā kristal he pilikia nui e keʻakeʻa ana i ka hoʻomohala ʻana o nā mea hana kiʻekiʻe. Hiki i kēia mau hemahema ke hoʻohaʻahaʻa i ka hana a hoʻopilikia i ka hilinaʻi o ka mea hana.
ʻO ka ʻenehana kiʻi topological X-ray: I mea e hoʻonui ai i ka ulu ʻana o ke aniani a hoʻomaopopo i ka hopena o nā hemahema i ka hana ʻana o ka hāmeʻa, pono ia e ʻike a nānā i ka hoʻonohonoho hemahema i nā kristal SiC. Ua lilo ke kiʻi kiʻi topological X-ray (ʻoi aku ka hoʻohana ʻana i nā kukuna radiation synchrotron) i ʻenehana kikoʻī koʻikoʻi e hiki ke hana i nā kiʻi hoʻonā kiʻekiʻe o ke ʻano o loko o ke aniani.
Manaʻo noiʻi
Ma muli o ka ʻenehana hoʻohālikelike ray tracing: Hoʻohana ka ʻatikala i ka hoʻohana ʻana i ka ʻenehana hoʻohālikelike ray tracing ma muli o ke ʻano hana hoʻohālikelike e hoʻohālikelike i ka ʻokoʻa kīnā i ʻike ʻia ma nā kiʻi topological X-ray maoli. Ua hōʻoia ʻia kēia ʻano he ala maikaʻi loa e aʻo ai i nā waiwai o nā hemahema aniani i nā semiconductor like ʻole.
Hoʻomaikaʻi i ka ʻenehana simulation: I mea e hoʻohālikelike maikaʻi ai i nā dislocations ʻokoʻa i ʻike ʻia ma nā kristal 4H-SiC a me 6H-SiC, ua hoʻomaikaʻi nā mea noiʻi i ka ʻenehana simulation ray tracing a hoʻokomo i nā hopena o ka hoʻomaha ʻana o ka ʻili a me ka lawe ʻana i ka photoelectric.
Maikaʻi noiʻi
Ka nānā 'ana i ke 'ano o ka dislocation: 'Ike 'ia ka 'atikala i ke 'ano o nā 'ano like 'ole o ka dislocations (e like me ka screw dislocations, edge dislocations, mixed dislocations, basal plane dislocations a me Frank-type dislocations) i nā polytypes like 'ole o SiC (me 4H a me 6H) me ka ho'ohana 'ana i ka ray tracing. ʻenehana hoʻohālikelike.
Hoʻohana i ka ʻenehana simulation: ʻO ka noi ʻana o ka ʻenehana simulation ray tracing ma lalo o nā kūlana beam like ʻole e like me ka topology beam nawaliwali a me ka topology hawewe mokulele, a me pehea e hoʻoholo ai i ka hohonu o ke komo ʻana o nā dislocations ma o ka ʻenehana simulation.
Hoʻohui i nā hoʻokolohua a me nā hoʻohālikelike: Ma ka hoʻohālikelike ʻana i nā kiʻi topological X-ray i loaʻa i ka hoʻokolohua me nā kiʻi i hoʻohālikelike ʻia, ua hōʻoia ʻia ka pololei o ka ʻenehana simulation i ka hoʻoholo ʻana i ke ʻano dislocation, Burgers vector a me ka māhele spatial o nā dislocations i ke aniani.
Nā hopena noiʻi
ʻO ka maikaʻi o ka ʻenehana hoʻohālikelike: Hōʻike ka haʻawina ʻo ka ʻenehana hoʻohālikelike ray tracing he ala maʻalahi, ʻaʻole luku a ʻike ʻole e hōʻike i nā waiwai o nā ʻano like ʻole o nā dislocations ma SiC a hiki ke hoʻohālikelike pono i ka hohonu komo pono o nā dislocations.
3D dislocation configuration analysis: Ma o ka ʻenehana simulation, hiki ke hana ʻia ka nānā ʻana i ka hoʻonohonoho hoʻonohonoho dislocation 3D a me ke ana ʻana, he mea koʻikoʻi ia no ka hoʻomaopopo ʻana i ke ʻano a me ka ulu ʻana o nā dislocations i ka wā o ka ulu aniani.
Nā noi i ka wā e hiki mai ana: Manaʻo ʻia e hoʻohana hou ʻia ka ʻenehana simulation ray tracing i ka topology high-energy a me ka topology X-ray-based topology. Eia kekahi, hiki ke hoʻonui ʻia kēia ʻenehana i ka simulation o nā ʻano hemahema o nā polytypes ʻē aʻe (e like me 15R-SiC) a i ʻole nā mea semiconductor ʻē aʻe.
Nānā Kiʻi
Fig. 1: Hoʻonohonoho kiʻi kiʻi kiʻi kiʻi topological synchrotron radiation, me ka hoʻouna ʻana (Laue) geometry, hoʻohuli hoʻohuli (Bragg) geometry, a me ka geometry hanana ʻai. Hoʻohana nui ʻia kēia mau geometries e hoʻopaʻa i nā kiʻi topological X-ray.
Fig. 2: Kiʻi kiʻi kiʻi o ka ʻokoʻa X-ray o ka wahi ʻino a puni ka wehe ʻana. Hōʻike kēia kiʻi i ka pilina ma waena o ke kukuna hanana (s0) a me ke kukuna ʻokoʻa (sg) me ka mokulele ʻokoʻa kūloko maʻamau (n) a me ka huina Bragg kūloko (θB).
Kiʻi 3: Nā kiʻi topography X-ray noʻonoʻo hope o nā micropipes (MPs) ma kahi wafer 6H-SiC a me ka ʻokoʻa o kahi dislocation i hoʻohālikelike ʻia (b = 6c) ma lalo o nā kūlana diffraction like.
Kiʻi 4: ʻO nā hui micropipe i kahi kiʻi topography hoʻohālikelike hope o kahi wafer 6H-SiC. Hōʻike ʻia nā kiʻi o nā MP like ʻole me nā spacing like ʻole a me nā MP ma nā ʻaoʻao ʻē aʻe e nā hoʻohālikelike ray tracing.
Fig. 5: Hōʻike ʻia nā kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi o nā dislocations pani pani (TSD) ma kahi wafer 4H-SiC. Hōʻike nā kiʻi i ka ʻokoʻa lihi i hoʻonui ʻia.
Kiʻi 6: Hōʻike ʻia nā kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi kiʻi o ka lima hema a me ka lima ʻākau 1c TSD ma kahi wafer 4H-SiC.
Fig. 7: Hōʻike ʻia nā hoʻohālikelike ray tracing o TSD ma 4H-SiC a me 6H-SiC, e hōʻike ana i nā dislocations me nā vectors Burgers like ʻole a me nā polytypes.
Kiʻi 8: Hōʻike i nā kiʻi topological X-ray o nā ʻano ʻano like ʻole o nā hiʻohiʻona o nā lihi lihi (TED) ma nā wafers 4H-SiC, a me nā kiʻi topological TED i hoʻohālikelike ʻia me ka hoʻohana ʻana i ke ʻano hihihihi.
Kiʻi 9: Hōʻike i nā X-ray back-reflection topological kiʻi o nā ʻano TED like ʻole ma nā wafers 4H-SiC, a me ka hoʻohālikelike TED hoʻohālikelike.
Fig. 10: Hōʻike i nā kiʻi hoʻohālike ray tracing simulation o nā dislocations threading mixed (TMDs) me nā vectors Burgers kikoʻī, a me nā kiʻi topological hoʻokolohua.
Fig. 11: Hōʻike i nā kiʻi topological back-reflection o basal plane dislocations (BPDs) ma 4H-SiC wafers, a me ka schematic diagram of the simulated edge dislocation contrast formation.
Kiʻi 12: Hōʻike i nā kiʻi hoʻohālike hihihihi o nā BPD helical lima ʻākau ma nā hohonu like ʻole e noʻonoʻo ana i ka hoʻomaha ʻana o ka ʻili a me nā hopena hoʻoemi photoelectric.
Fig. 13: Hōʻike i nā kiʻi hoʻohālikelike o nā BPD helical lima ʻākau ma nā hohonu like ʻole, a me nā kiʻi topological X-ray ulu ʻana.
Fig. 14: Hōʻike i ka schematic diagram o basal plane dislocations ma kekahi ʻaoʻao ma 4H-SiC wafers, a pehea e hoʻoholo ai i ka hohonu komo ma ke ana ʻana i ka lōʻihi o ka projection.
Kiʻi 15: ʻO ka ʻokoʻa o nā BPD me nā vectors Burgers ʻokoʻa a me nā kuhikuhi laina i nā kiʻi topological X-ray ulu ʻana, a me nā hopena hoʻohālike e pili ana i nā hihi.
Fig. 16: ʻO ke kiʻi hoʻohālike ray tracing simulation o ka TSD deflected lima ʻākau ma ka wafer 4H-SiC, a hōʻike ʻia ke kiʻi topological X-ray incidence.
Kiʻi 17: Hōʻike ʻia ke kiʻi hoʻohālikelike hihi a me ke kiʻi hoʻokolohua o ka TSD i hoʻohuli ʻia ma ka 8° offset 4H-SiC wafer.
Kiʻi 18: ʻO nā kiʻi hoʻohālikelike ray tracing o nā TSD a me nā TMD i hoʻohuli ʻia me nā vectors Burgers ʻokoʻa akā ua hōʻike ʻia ke kuhikuhi laina like.
Fig. 19: Hōʻike ʻia ke kiʻi hoʻohālikelike ray tracing simulation o nā dislocations ʻano Frank, a me ke kiʻi topological X-ray like ʻole.
Fig. 20: ʻO ke kiʻi topological X-ray beam keʻokeʻo i hoʻoili ʻia o ka micropipe ma ka wafer 6H-SiC, a hōʻike ʻia ke kiʻi hoʻohālikelike ray tracing.
Kiʻi 21: ʻO ke kiʻi topological X-ray monochromatic o ka hāpana ʻoki axially o 6H-SiC, a hōʻike ʻia ke kiʻi hoʻohālikelike ray tracing o nā BPD.
Kiʻi 22: hōʻike i nā kiʻi hoʻohālike e huli ana i nā hihi o nā BPD ma 6H-SiC i ʻoki axially i nā laʻana ma nā kihi hanana like ʻole.
Fig. 23: hōʻike i nā kiʻi hoʻohālike ray tracing o TED, TSD a me TMD ma 6H-SiC axially ʻoki ʻia ma lalo o ka grazing incidence geometry.
Fig. 24: hōʻike i nā kiʻi topological X-ray o nā TSD i hoʻohuli ʻia ma nā ʻaoʻao like ʻole o ka laina isoclinic ma ka wafer 4H-SiC, a me nā kiʻi simulation ray tracing.
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Ka manawa hoʻouna: Jun-18-2024