Ka hoʻohana ʻana o Silicon Carbide Ceramics ma Semiconductor Field

Nā Semiconductors:

Ke hahai nei ka ʻoihana semiconductor i ke kānāwai ʻenehana o "hoʻokahi hanauna o ka ʻenehana, hoʻokahi hanauna o ke kaʻina hana, a me hoʻokahi hanauna o nā lako", a ʻo ka hoʻomaikaʻi ʻana a me ka hoʻololi ʻana o nā lako semiconductor e hilinaʻi nui ʻia i ka holomua ʻenehana o nā ʻāpana kikoʻī. Ma waena o lākou, ʻo nā ʻāpana ceramic precision nā mea kikoʻī semiconductor precision part material, nona nā noi koʻikoʻi i ke ʻano o nā loulou hana semiconductor nui e like me ka deposition chemical vapor, deposition kino kino, implantation ion, a me etching. E like me nā bearings, alakaʻi alakaʻi, linings, electrostatic chucks, mechanical handling arms, etc. ʻOi aku i loko o ka lua o nā lako, hoʻokani ia i ke kuleana o ke kākoʻo, pale, a me ka hoʻohuli.

Mai ka makahiki 2023, ua hoʻopuka pū ʻo Netherlands a me Iapana i nā lula hou a i ʻole nā ​​​​kālepa kālepa ʻē aʻe e pili ana i ka mana, e hoʻohui ana i nā lula laikini hoʻokuʻu aku no nā lako semiconductor me nā mīkini lithography, a ua puka mālie ke ʻano o ka semiconductor anti-globalization. ʻO ke koʻikoʻi o ka mana kūʻokoʻa o ke kaulahao lako ua lilo i mea nui. Ke alo nei i ka noi no ka localization o nā ʻāpana lako semiconductor, ke hoʻoikaika ikaika nei nā ʻoihana kūloko i ka hoʻomohala ʻana i ka ʻoihana. Ua ʻike ʻo Zhongci Electronics i ka localization o nā ʻāpana kikoʻī kiʻekiʻe e like me nā pā wela a me nā chucks electrostatic, e hoʻonā i ka pilikia "bottleneck" o ka ʻoihana semiconductor lako hale; ʻO Dezhi New Materials, kahi mea hoʻolako kūloko kūloko o nā kumu graphite i uhi ʻia ʻo SiC a me nā apo etching SiC, ua hoʻopau maikaʻi i kahi kālā o 100 miliona yuan, etc..
ʻO nā substrate seramika silicon nitride kiʻekiʻe:

Hoʻohana nui ʻia nā substrate seramika silikon nitride i nā ʻāpana mana, nā mea semiconductor a me nā mea hoʻohuli o nā kaʻa uila maʻemaʻe (EVs) a me nā kaʻa uila hybrid (HEVs), a loaʻa iā lākou ka mākeke nui a me nā manaʻo noi.

I kēia manawa, ʻo ke kiʻekiʻe thermal conductivity silika nitride ceramic substrate mea no nā noi pāʻoihana e koi i ka thermal conductivity ≥85 W / (m·K), ka ikaika kulou ≥650MPa, a me ka paʻakikī haʻihaʻi 5~7MPa·m1/2. ʻO nā hui i loaʻa maoli ka hiki ke hoʻohua nui i nā substrates silicon nitride ceramic thermal conductivity kiʻekiʻe ʻo Toshiba Group, Hitachi Metals, Japan Electric Chemical, Japan Maruwa a me Japan Fine Ceramics.

Ua holomua ka noiʻi ʻana i ka ʻāina no ka silicon nitride ceramic substrate material. He 100 W/(m·K) ka hana wela o ka silicon nitride ceramic substrate i hoʻomākaukau ʻia e ke kaʻina hoʻolele lipine o Beijing Branch o Sinoma High-Tech Nitride Ceramics Co., Ltd. Ua hoʻomākaukau maikaʻi ʻo Beijing Sinoma Artificial Crystal Research Institute Co., Ltd. i kahi silika nitride ceramic substrate me ka ikaika wili o 700-800MPa, kahi ʻokiʻoki haʻihaʻi ≥8MPa·m1/2, a me kahi conductivity thermal ≥80W/(m·K) ma ka hoʻonui ʻana i ke ʻano a me ke kaʻina hana sintering.