Nā waiwai semiconductor seramika

Nā hiʻohiʻona:

ʻO ka resistivity o nā seramika me nā waiwai semiconductor e pili ana i 10-5 ~ 107ω.cm, a hiki ke loaʻa nā waiwai semiconductor o nā mea seramika ma o ka doping a i ʻole ka hana ʻana i nā hemahema lattice ma muli o ka deviation stoichiometric. ʻO nā seramika e hoʻohana ana i kēia ʻano me TiO2,

ZnO, CdS, BaTiO3, Fe2O3, Cr2O3 a me SiC. ʻO nā ʻano like ʻole osemiconductor keramikaʻo ia ka hoʻololi ʻana o kā lākou conductivity uila me ke kaiapuni, hiki ke hoʻohana ʻia e hana i nā ʻano mea like ʻole o nā ʻano mea hana seramika.

E like me ka wela, ke kinoea, ka haʻahaʻa haʻahaʻa, ka puʻe, ka māmā a me nā mea ʻē aʻe. Hoʻohui ʻia nā mea spinel semiconductor, e like me Fe3O4, me nā mea spinel non-conductor spinel, e like me MgAl2O4, i nā hoʻonā paʻa paʻa.

Hiki ke hoʻohana ʻia ʻo MgCr2O4, a me Zr2TiO4, e like me nā thermistors, kahi i mālama pono ʻia i nā mea pale pale e ʻokoʻa me ka mahana. Hiki ke hoʻololi ʻia ka ZnO ma ka hoʻohui ʻana i nā oxides e like me Bi, Mn, Co a me Cr.

ʻO ka hapa nui o kēia mau oxides ʻaʻole i hoʻoheheʻe paʻa ʻia i ZnO, akā ʻo ka deflection ma ka palena o ka palaoa e hana i kahi papa pale, no ka loaʻa ʻana o ZnO varistor ceramic material, a he ʻano mea me ka hana maikaʻi loa i nā seramika varistor.

Hiki iā SiC doping (e like me ke kalapona ʻeleʻele kanaka, ka pauka graphite) hiki ke hoʻomākaukaumea semiconductorme ke kūpaʻa wela kiʻekiʻe, hoʻohana ʻia e like me nā mea hoʻomehana kūʻē kūʻē, ʻo ia hoʻi, nā koʻokoʻo kalapona silika i nā umu uila wela wela. E hoʻomalu i ka resistivity a me ka ʻāpana keʻa o SiC e hoʻokō i nā mea āpau i makemake ʻia

ʻO nā kūlana hana (a hiki i 1500 ° C), e hoʻonui i kona resistivity a me ka hoʻohaʻahaʻa ʻana i ka ʻāpana keʻa o ka mea hoʻomehana e hoʻonui i ka wela i hana ʻia. ʻO ke koʻokoʻo kalapona silikoni i ka lewa e loaʻa i ka hopena oxidation, ʻo ka hoʻohana ʻana i ka mahana i kaupalena ʻia i 1600 ° C ma lalo, ʻo ke ʻano maʻamau o ka lāʻau kalapona silika.

ʻO ka mahana hana palekana he 1350°C. I loko o SiC, ua pani ʻia kahi ʻātoma Si e kahi N atom, no ka mea, ʻoi aku ka nui o nā electrons, aia nā electrons keu, a ua kokoke kona pae ikehu i ka hui haʻahaʻa haʻahaʻa a ua maʻalahi ke hoʻokiʻekiʻe i ka hui conduction, no laila ke kūlana ikehu. kapa ʻia ʻo ka pae hāʻawi, ʻo kēia hapalua

ʻO nā mea hoʻokele he N-type semiconductor a i ʻole e hoʻokele uila i nā semiconductors. Inā hoʻohana ʻia kahi ʻātoma Al ma SiC e pani i kahi ʻātoma Si, ma muli o ka nele o kahi electron, ua kokoke ke kūlana ikehu mea i kūkulu ʻia i ka pahu electron valence ma luna, ua maʻalahi ka ʻae ʻana i nā electrons, a no laila ua kapa ʻia ʻo ia ka ʻae.

ʻO ka pae ikehu koʻikoʻi, e waiho ana i kahi hakahaka i loko o ka puʻu valence e hiki ke alakaʻi i nā electrons no ka mea ʻo ke kūlana hakahaka e hana like me ka mea lawe ukana maikaʻi, ua kapa ʻia ʻo P-type semiconductor a i ʻole semiconductor puka (H. Sarman,1989).