ʻO CVD silikon carbide uhi-2

ʻO ka uhi ʻana o ka carbide silikon CVD

1. No ke aha he aka uhi ʻana o ka carbide silika

ʻO ka papa epitaxial kahi kiʻi ʻoniʻoni aniani kikoʻī kikoʻī i ulu ma ke kumu o ka wafer ma o ke kaʻina epitaxial. ʻO ka wafer substrate a me ka epitaxial thin film i hui pū ʻia he epitaxial wafers. Ma waena o lākou, kaepitaxial silikon carbideUa ulu ʻia ka papa ma luna o ka substrate silicon carbide conductive e kiʻi i kahi wafer epitaxial homogeneous carbide, hiki ke hana hou ʻia i nā mana mana e like me Schottky diodes, MOSFET, a me IGBT. I waena o lākou, ʻo ka mea i hoʻohana nui ʻia ka substrate 4H-SiC.

No ka mea ʻike maoli ʻia nā mea hana āpau ma ka epitaxy, ʻo ka maikaʻi oepitaxyLoaʻa ka hopena nui i ka hana o ka mea hana, akā pili ka maikaʻi o ka epitaxy e ka hana ʻana o nā kristal a me nā substrates. Aia ia ma ka loulou waena o kahi ʻoihana a he hana koʻikoʻi loa ia i ka hoʻomohala ʻana i ka ʻoihana.

ʻO nā ala nui no ka hoʻomākaukau ʻana i nā papa epitaxial silicon carbide: ke ʻano ulu evaporation; epitaxy pae wai (LPE); molecular beam epitaxy (MBE); ka waiho ʻana o ka mahu (CVD).

Ma waena o lākou, ʻo ka chemical vapor deposition (CVD) ka mea kaulana loa 4H-SiC homoepitaxial. Hoʻohana maʻamau ka epitaxy 4-H-SiC-CVD i nā lako CVD, hiki ke hōʻoia i ka hoʻomau ʻana o ka papa epitaxial 4H crystal SiC ma lalo o nā kūlana wela ulu.

I nā lako CVD, ʻaʻole hiki ke kau pololei ʻia ka substrate ma luna o ka metala a i ʻole ke kau wale ʻia ma kahi kumu no ka epitaxial deposition, no ka mea e pili ana i nā ʻano like ʻole e like me ke kuhikuhi holo ʻana o ke kinoea (horizontal, vertical), wela, kaomi, hoʻoponopono, a hāʻule nā ​​mea haumia. No laila, pono kahi kumu, a laila kau ʻia ka substrate ma ka disk, a laila hana ʻia ka epitaxial deposition ma ka substrate me ka hoʻohana ʻana i ka ʻenehana CVD. ʻO kēia kumu ke kumu graphite i uhi ʻia ʻo SiC.

Ma ke ʻano he kumu nui, loaʻa i ka graphite base nā hiʻohiʻona o ka ikaika kikoʻī kiʻekiʻe a me ka modulus kikoʻī, ke kū ʻana o ka haʻalulu wela maikaʻi a me ka pale ʻana i ka corrosion, akā i ka wā o ke kaʻina hana, e ʻino ʻia ka graphite a pauka ma muli o ke koena o nā kinoea corrosive a me nā mea metala. mea, a e hoʻemi nui ʻia ke ola lawelawe o ka waihona graphite.

I ka manawa like, ʻo ka pauka graphite hāʻule e hoʻohaumia i ka chip. I ke kaʻina hana o ka silicon carbide epitaxial wafers, he mea paʻakikī ke hoʻokō i nā koi ikaika o ka poʻe no ka hoʻohana ʻana i nā mea graphite, kahi mea e kaupalena ʻia ai kona hoʻomohala ʻana a me ka hoʻohana pono ʻana. No laila, ua hoʻomaka ka ʻenehana uhi.

2. Pono oKa uhi ʻana o SiC

Loaʻa i nā waiwai kino a me nā kemika o ka uhi ʻana i nā koi koʻikoʻi no ke kūpaʻa wela kiʻekiʻe a me ke kūpaʻa corrosion, e pili pono ana i ka hua a me ke ola o ka huahana. Loaʻa ka ikaika kiʻekiʻe o ka mea SiC, ka paʻakikī kiʻekiʻe, ka coefficient hoʻonui wela haʻahaʻa a me ka conductivity thermal maikaʻi. He mea koʻikoʻi ka wela wela a me nā mea semiconductor wela kiʻekiʻe. Hoʻohana ʻia ia i ke kumu graphite. ʻO kāna mau pōmaikaʻi:

-ʻAʻole hiki ke hoʻopaʻa ʻia ʻo SiC a hiki ke hoʻopili piha i ka waihona graphite, a loaʻa iā ia ka paʻa maikaʻi e pale aku i ka pōʻino e ke kinoea corrosive.

-He kiʻekiʻe ka conductivity thermal o SiC a me ka ikaika hoʻopaʻa kiʻekiʻe me ke kumu graphite, e hōʻoia ana ʻaʻole maʻalahi ka hāʻule ʻana o ka uhi ma hope o nā pōʻai kiʻekiʻe a me nā haʻahaʻa haʻahaʻa.

-He kūpaʻa kemika maikaʻi ʻo SiC e pale ai i ka hāʻule ʻana o ka uhi ʻana i kahi ea wela a me ka corrosive.

Eia kekahi, pono nā kapuahi epitaxial o nā mea like ʻole i nā pā graphite me nā hōʻailona hana like ʻole. Pono ka hoʻopili ʻana o ka hoʻonui wela o nā mea graphite e hoʻololi i ka mahana ulu o ka umu epitaxial. No ka laʻana, he kiʻekiʻe ka wela o ka ulu ʻana o ka silicon carbide epitaxial, a pono kahi pā me ka hoʻonui ʻana o ka wela kiʻekiʻe. Kokoke loa ka coefficient hoʻonui wela o SiC i ka graphite, no laila kūpono ia e like me ka mea i makemake ʻia no ka uhi ʻana o ke kumu graphite.
Loaʻa i nā mea SiC nā ʻano aniani like ʻole, a ʻo nā mea maʻamau ʻo 3C, 4H a me 6H. He ʻokoʻa ka hoʻohana ʻana o nā ʻano kristal like ʻole o SiC. No ka laʻana, hiki ke hoʻohana ʻia ka 4H-SiC e hana i nā mea mana kiʻekiʻe; ʻO 6H-SiC ka mea paʻa loa a hiki ke hoʻohana ʻia e hana i nā mea hana optoelectronic; Hiki ke hoʻohana ʻia ʻo 3C-SiC e hana i nā papa epitaxial GaN a hana i nā polokalamu SiC-GaN RF ma muli o kona ʻano like me GaN. ʻO 3C-SiC ka mea maʻamau i kapa ʻia ʻo β-SiC. ʻO kahi hoʻohana koʻikoʻi o ka β-SiC ma ke ʻano he kiʻi ʻoniʻoni a me nā mea uhi. No laila, ʻo β-SiC ka mea nui no ka uhi ʻana.
Hoʻohana pinepine ʻia nā uhi SiC i ka hana semiconductor. Hoʻohana nui ʻia lākou i nā substrates, epitaxy, oxidation diffusion, etching a me implantation ion. ʻO nā waiwai kino a me nā kemika o ka uhi ʻana he koi koʻikoʻi i ke kūpaʻa wela kiʻekiʻe a me ke kūpaʻa corrosion, e pili pono ana i ka hua a me ke ola o ka huahana. No laila, he mea koʻikoʻi ka hoʻomākaukau ʻana i ka uhi SiC.