Loaʻa nā mana mana Semiconductor i kahi kūlana koʻikoʻi i nā ʻōnaehana uila mana, ʻoi aku hoʻi i ka pōʻaiapili o ka hoʻomohala wikiwiki ʻana o nā ʻenehana e like me ke akamai artificial, nā kamaʻilio 5G a me nā kaʻa ikehu hou, ua hoʻomaikaʻi ʻia nā koi hana no lākou.
Silicon carbideUa lilo ʻo (4H-SiC) i mea kūpono no ka hana ʻana i nā mea mana semiconductor hana kiʻekiʻe ma muli o kāna mau pono e like me ka bandgap ākea, kiʻekiʻe thermal conductivity, kiʻekiʻe breakdown field ikaika, kiʻekiʻe saturation drift rate, kemika kūpaʻa a me ka pale ʻana i ka radiation. Eia nō naʻe, ʻo 4H-SiC ka paʻakikī kiʻekiʻe, ka brittleness kiʻekiʻe, ka inert kemika ikaika, a me ka paʻakikī kiʻekiʻe. He mea koʻikoʻi ka maikaʻi o ka ʻili o kāna substrate wafer no nā noi hāmeʻa nui.
No laila, ʻo ka hoʻomaikaʻi ʻana i ka maikaʻi o ka ili o 4H-SiC substrate wafers, ʻoi aku ka hoʻoneʻe ʻana i ka papa i hoʻopōʻino ʻia ma ka ʻaoʻao hana wafer, ʻo ia ke kī i ka hoʻokō pono, haʻahaʻa haʻahaʻa a me ke kūlana kiʻekiʻe 4H-SiC substrate wafer processing.
Hoao
Ke hoʻohana nei ka hoʻokolohua i kahi ingot 4-ʻano N-type 4H-SiC i ulu ʻia e ke ʻano o ka lawe ʻana i ka mahu kino, i hana ʻia ma o ka ʻoki uwea, wili, wili aʻai, wili maikaʻi a me ka polishing, a hoʻopaʻa i ka mānoanoa wehe o ka ʻili C a me ka ʻili Si. a me ka mānoanoa wafer hope loa i kēlā me kēia hana.
Kiʻi 1 kiʻi kiʻi kiʻi o 4H-SiC hana aniani
Kiʻi 2 Wehe ʻia ka mānoanoa mai ka ʻaoʻao C a me ka ʻaoʻao Si o 4H-SiC waferma hope o nā ʻanuʻu hana like ʻole a me ka mānoanoa o ka wafer ma hope o ka hana ʻana
ʻO ka mānoanoa, ka morphology o ka ʻili, ka ʻinoʻino a me nā waiwai mechanical o ka wafer i hōʻike piha ʻia e ka wafer geometry parameter tester, differential interference microscope, atomic force microscope, surface roughness ana mea a me nanoindenter. Eia kekahi, ua hoʻohana ʻia ka diffractometer X-ray kiʻekiʻe e loiloi i ka maikaʻi aniani o ka wafer.
Hāʻawi kēia mau ʻanuʻu hoʻokolohua a me nā ʻano hoʻāʻo i ke kākoʻo ʻenehana kikoʻī no ke aʻo ʻana i ka nui o ka lawe ʻana i nā mea a me ka maikaʻi o ka ʻili i ka wā o ka hana ʻana o 4H-SiC wafers.
Ma o nā hoʻokolohua, ua kālailai nā mea noiʻi i nā hoʻololi i ka helu hoʻoneʻe waiwai (MRR), ka morphology o ka ʻili a me ka ʻino, a me nā waiwai mechanical a me ka maikaʻi aniani o 4H-SiC wafersi nā ʻanuʻu hana like ʻole (ka ʻoki uea, ka wili, ka wili ʻana, ka wili maikaʻi, ka polishing).
Kiʻi 3 Laki hoʻoneʻe waiwai o C-maka a me Si-maka o 4H-SiC waferi nā ʻanuʻu hana like ʻole
Ua ʻike ʻia ka haʻawina ma muli o ka anisotropy o nā waiwai mechanical o nā maka aniani like ʻole o 4H-SiC, aia kahi ʻokoʻa ma MRR ma waena o C-maka a me Si-maka ma lalo o ka hana like, a ʻoi aku ka kiʻekiʻe o ka MRR o ka maka C ma mua o o ko Si-maka. Me ka holomua o nā ʻanuʻu kaʻina hana, ʻoi aku ka maikaʻi o ka morphology o ka ʻili a me ka roughness o 4H-SiC wafers. Ma hope o ka polishing, ʻo ka Ra o C-face he 0.24nm, a ʻo ka Ra o Si-face hiki i 0.14nm, hiki ke hoʻokō i nā pono o ka ulu epitaxial.
Kiʻi 4 Nā kiʻi microscope Optical o ka ʻili C (a~e) a me ka ʻili Si (f~j) o ka wafer 4H-SiC ma hope o nā kaʻina hana like ʻole.
Kiʻi 5 Nā kiʻi microscope ikaika Atomic o ka ʻili C (a~c) a me ka ʻili Si (d~f) o ka wafer 4H-SiC ma hope o nā kaʻina hana CLP, FLP a me CMP.
Kiʻi 6 (a) elastic modulus a me (b) paʻakikī o ka ʻili C a me ka ʻili Si o 4H-SiC wafer ma hope o nā kaʻina hana like ʻole.
Hōʻike ka hoʻāʻo waiwai mechanical i ka ʻili C o ka wafer i ʻoi aku ka paʻakikī ma mua o ka mea ʻili Si, ʻoi aku ka nui o ka haki ʻana i ka wā o ka hana ʻana, ʻoi aku ka wikiwiki o ka wehe ʻana i nā mea, a me ka morphology o ka ʻili maikaʻi ʻole. ʻO ka wehe ʻana i ka papa i hoʻopōʻino ʻia ma ka ʻili i hana ʻia ke kī i ka hoʻomaikaʻi ʻana i ka maikaʻi o ka ʻili o ka wafer. Hiki ke hoʻohana ʻia ka hapalua kiʻekiʻe o ka 4H-SiC (0004) i ka ʻōniʻoniʻo haʻalulu no ka ʻike a me ka pololei o ke ʻano a me ka nānā ʻana i ka papa pōʻino o ka ʻili o ka wafer.
Kiʻi 7 (0004) ka ʻaʻa haʻalulu hapa-ākea o ka C-face a me ka Si-face o 4H-SiC wafer ma hope o nā kaʻina hana like ʻole.
Hōʻike nā hopena noiʻi e hiki ke hoʻoneʻe mālie ʻia ka papa pōʻino o ka wafer ma hope o ka hana ʻana o ka wafer 4H-SiC, kahi e hoʻomaikaʻi maikaʻi ai i ka maikaʻi o ka ʻili o ka wafer a hāʻawi i kahi ʻike loea no ka hana kiʻekiʻe, haʻahaʻa haʻahaʻa a kiʻekiʻe. o 4H-SiC substrate wafers.
Ua hana nā mea noiʻi i nā wafers 4H-SiC ma o nā kaʻina hana like ʻole e like me ke ʻoki uea, ka wili, ka wili ʻana, ka wili maikaʻi a me ka polishing, a ua aʻo i nā hopena o kēia mau kaʻina ma ka maikaʻi o ka ʻili o ka wafer.
Hōʻike nā hualoaʻa me ka holomua o nā ʻanuʻu hana, ʻoi aku ka maikaʻi o ka morphology o ka ʻili a me ka ʻawaʻawa o ka wafer. Ma hope o ka polishing, hiki i ka roughness o ka C-face a me ka Si-face i 0.24nm a me 0.14nm i kēlā me kēia, e kū ana i nā koi o ka ulu epitaxial. ʻOi aku ka paʻakikī o ka maka C o ka wafer ma mua o ka mea Si-face, a ʻoi aku ka maʻalahi i ka haki ʻana i ka wā o ka hana ʻana, ka hopena o ka morphology o ka ʻili a me ka roughness. ʻO ka wehe ʻana i ka papa pōʻino o ka ʻili o ka ʻili i hana ʻia ke kī e hoʻomaikaʻi ai i ka maikaʻi o ka ʻili o ka wafer. Hiki i ka hapalua-ākea o ka 4H-SiC (0004) kaʻa pōhaku ke hōʻike pololei a pololei hoʻi i ka papa pōʻino o ka ʻili o ka wafer.
Hōʻike ka noiʻi e hiki ke hoʻoneʻe mālie ʻia ka papa i hōʻino ʻia ma ka ʻili o nā wafers 4H-SiC ma o ka hana ʻana o ka wafer 4H-SiC, me ka hoʻomaikaʻi maikaʻi ʻana i ka maikaʻi o ka ʻili o ka wafer, e hāʻawi ana i kahi ʻike loea no ka hana kiʻekiʻe, haʻahaʻa haʻahaʻa, a kiʻekiʻe- ka hana maikaʻi o 4H-SiC substrate wafers.
Ka manawa hoʻouna: Jul-08-2024