Ke ʻimi nei i nā diski epitaxial silicon carbide semiconductor: Nā pono hana a me nā manaʻo noi

Ma ke kahua o ka ʻenehana uila i kēia lā, pāʻani koʻikoʻi nā mea semiconductor. Iwaena o lakou,kalapona kalapona (SiC)ma ke ʻano he mea semiconductor ākea ākea, me kāna mau hana maikaʻi loa, e like me ke kahua uila breakdown kiʻekiʻe, ka wikiwiki saturation kiʻekiʻe, ka conductivity thermal kiʻekiʻe, etc. ʻO kakākika kalapona epitaxial disk, ma ke ʻano he mea nui o ia mea, ua hōʻike i ka hiki ke hoʻohana nui.

ICP刻蚀托盘 ICP Etching Tray
一、epitaxial disk hana: piha pono
1. Ultra-kiʻekiʻe breakdown uila kahua: hoʻohālikelike me kuʻuna silikona mea, ka breakdown uila kahua okalapona kalaponaʻoi aku ma mua o 10 mau manawa. 'O ia hoʻi, ma lalo o nā kūlana voltage like, e hoʻohana ana nā mea uilanā ʻāpana epitaxial silicon carbidehiki ke pale i nā au kiʻekiʻe, ma laila e hana ai i nā mea uila uila kiʻekiʻe, kiʻekiʻe-frequency, kiʻekiʻe.
2. High-wikiwiki saturation māmā holo: ka saturation māmā holo okalapona kalaponaʻoi aku ma mua o 2 mau manawa o ka silika. Ke hana nei ma ke kiʻekiʻe wela a me ka wikiwiki kiʻekiʻe, kakākika kalapona epitaxial diskʻoi aku ka maikaʻi, kahi e hoʻomaikaʻi nui ai i ka paʻa a me ka hilinaʻi o nā mea uila.
3. High efficiency thermal conductivity: ka thermal conductivity o silicon carbide ua oi aku mamua o 3 manawa o ke silika. Hāʻawi kēia hiʻohiʻona i nā mea uila e hoʻopau maikaʻi i ka wela i ka wā e hana mau ai ka mana kiʻekiʻe, a laila e pale ai i ka wela a hoʻomaikaʻi i ka palekana o ka mīkini.
4. Paʻa kemika maikaʻi loa: ma nā wahi koʻikoʻi e like me ke kiʻekiʻe o ka wela, ke kiʻekiʻe kiʻekiʻe a me ka pāhawewe ikaika, paʻa mau ka hana o ka silicon carbide e like me ka wā ma mua. ʻO kēia hiʻohiʻona hiki i ka silicon carbide epitaxial disk e mālama i ka hana maikaʻi loa i mua o nā kaiapuni paʻakikī.
二、 kaʻina hana: kālai pono ʻia
ʻO nā kaʻina hana nui no ka hana ʻana i ka SIC epitaxial disk e pili ana i ka hoʻoheheʻe kino kino (PVD), ka hoʻoheheʻe ʻana o ke kino (CVD) a me ka ulu epitaxial. Loaʻa i kēlā me kēia kaʻina hana kona mau hiʻohiʻona ponoʻī a koi i ka mana pololei o nā ʻāpana like ʻole e loaʻa ai nā hopena maikaʻi loa.
1. Kaʻina hana PVD: Ma ka evaporation a sputtering a me nā ʻano hana ʻē aʻe, waiho ʻia ka pahuhopu SiC ma luna o ka substrate e hana i kahi kiʻiʻoniʻoni. ʻO ke kiʻi i hoʻomākaukau ʻia e kēia ʻano he maʻemaʻe kiʻekiʻe a me ka crystallinity maikaʻi, akā lohi ka wikiwiki o ka hana.
2. ʻO ke kaʻina hana CVD: Ma ka haki ʻana i ke kinoea kumu carbide silicon i ka wela kiʻekiʻe, waiho ʻia ma ka substrate e hana i kahi kiʻiʻoniʻoni lahilahi. Hiki ke hoʻomaluʻia ka mānoanoa a me ka likeʻole o ke kiʻi i hoʻomākaukauʻia e kēiaʻano, akā maikaʻiʻole ka maʻemaʻe a me ka crystallinity.
3. Ka ulu ʻana o ka epitaxial: ka ulu ʻana o ka papa epitaxial SiC ma luna o ke silikoni monocrystalline a i ʻole nā ​​mea monocrystalline ʻē aʻe ma ke ʻano hoʻoheheʻe mahu. ʻO ka papa epitaxial i hoʻomākaukau ʻia e kēia ʻano hana hoʻohālikelike maikaʻi a maikaʻi loa me ka mea substrate, akā ʻoi aku ka kiʻekiʻe o ke kumukūʻai.
三、Manaʻo noi: E hoʻomālamalama i ka wā e hiki mai ana
Me ka hoʻomau mau ʻana o ka ʻenehana uila uila a me ka piʻi nui ʻana o ka noi no ka hana kiʻekiʻe a me nā pono uila hilinaʻi kiʻekiʻe, ʻo ka silicon carbide epitaxial disk ka loaʻa ʻana o kahi noi ākea i ka hana ʻana i nā mea hana semiconductor. Hoʻohana nui ʻia ia i ka hana ʻana i nā mīkini semiconductor kiʻekiʻe kiʻekiʻe, e like me nā hoʻololi uila uila, inverters, rectifiers, etc.
Me kāna mau pono hana kūʻokoʻa a me ka hoʻomaikaʻi mau ʻana o ke kaʻina hana, ke hōʻike mālie nei ka silicon carbide epitaxial disk i kona mana nui i ke kahua semiconductor. Loaʻa iā mākou ke kumu e manaʻoʻiʻo ai i ka wā e hiki mai ana o ka ʻepekema a me ka ʻenehana, ʻoi aku ka nui o ka hana.

 

Ka manawa hoʻouna: Nov-28-2023