Maikaʻi ʻia a unuhi ʻia ma ka Silicon Carbide Epitaxial Growth Equipment

ʻO nā substrate Silicon carbide (SiC) he nui nā hemahema e pale ai i ka hana pololei. No ka hana ʻana i nā wafers chip, pono e hoʻoulu ʻia kahi kiʻi ʻoniʻoni hoʻokahi-crystal ma ka substrate SiC ma o kahi kaʻina epitaxial. ʻIke ʻia kēia kiʻiʻoniʻoni ʻo ka papa epitaxial. Ma kahi kokoke i nā mea SiC āpau e ʻike ʻia ma nā mea epitaxial, a ʻo nā mea homoepitaxial SiC kiʻekiʻe kiʻekiʻe e hoʻokumu i ke kumu no ka hoʻomohala ʻana i nā hāmeʻa SiC. ʻO ka hana o nā mea epitaxial e hoʻoholo pololei i ka hana o nā polokalamu SiC.

ʻO nā mea SiC kiʻekiʻe a hilinaʻi kiʻekiʻe e hoʻokau i nā koi koʻikoʻi ma luna o ka morphology o ka ʻili, ka defect density, doping uniformity, a me ka mānoanoa like ʻole.epitaxialmea waiwai. ʻO ka loaʻa ʻana o ka nui nui, haʻahaʻa haʻahaʻa haʻahaʻa, a me ka ʻano like ʻole ʻo SiC epitaxy ua lilo i mea koʻikoʻi no ka hoʻomohala ʻana i ka ʻoihana SiC.

Ke hilinaʻi nei ka hana ʻana i ka epitaxy SiC kiʻekiʻe i nā kaʻina hana a me nā mea hana. I kēia manawa, ʻo ke ala i hoʻohana nui ʻia no ka ulu ʻana o ka epitaxial SiCʻO ka waiho ʻana o ka mahu (CVD).Hāʻawi ʻo CVD i ka mana pololei ma luna o ka mānoanoa kiʻiʻoniʻoni epitaxial a me ka neʻe ʻana o ka doping, haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa, haʻahaʻa o ka ulu ʻana, a me ka mana kaʻina hana automated, e lilo ia i ʻenehana hilinaʻi no nā noi kālepa kūleʻa.

SiC CVD epitaxyhoʻohana maʻamau i nā lako CVD pā wela a i ʻole pā mahana. ʻO nā mahana ulu kiʻekiʻe (1500-1700 ° C) e hōʻoia i ka hoʻomauʻana o ka 4H-SiC crystalline form. Ma muli o ka pilina ma waena o ke kahe kahe o ke kinoea a me ka ʻili o ka substrate, hiki ke hoʻokaʻawale ʻia nā keʻena pane o kēia mau ʻōnaehana CVD i nā hoʻolālā ākea a me ke kūpaʻa.

Hoʻoholo nui ʻia ka maikaʻi o nā kapuahi epitaxial SiC ma nā ʻano ʻekolu: ka ulu ʻana o ka epitaxial (me ka like ʻana o ka mānoanoa, ka like ʻana o ka doping, ka helu defect, a me ka ulu ʻana o ka ulu ʻana), ka hana ʻana o ka mahana o nā mea hana (me nā helu hoʻomehana / hoʻoluʻu, ka wela kiʻekiʻe, a me ka kūlike o ka mahana. ), a me ka maikaʻi o ke kumu kūʻai (me ke kumu kūʻai ʻāpana a me ka hiki ke hana).

Nā ʻokoʻa ma waena o ʻekolu ʻano o SiC Epitaxial Growth Furnaces

1. ʻO nā Pūnaehana CVD Horizontal Pā wela:

-Nā hiʻohiʻona:Hōʻike maʻamau nā ʻōnaehana ulu nui-nui hoʻokahi-wafer i alakaʻi ʻia e ka hoʻololi ʻana o ke kinoea, e loaʻa ana nā metric intra-wafer maikaʻi loa.

-Kōkohu Lunamakaʻāinana:ʻO ka Pe1O6 o LPE, hiki ke hoʻouka a hoʻoiho i ka wafer ma 900°C. ʻIke ʻia no ka ulu kiʻekiʻe o ka ulu ʻana, nā pōkole epitaxial pōkole, a me ka hana maʻamau intra-wafer a me waena.

-hana:No ka 4-6 'īniha 4H-SiC epitaxial wafers me ka mānoanoa ≤30μm, loaʻa iā ia ka mānoanoa intra-wafer non-uniformity ≤2%, doping concentrate non-uniformity ≤5%, ʻili ʻili kīnā ≤1 cm-², a me ke kīnā ʻole. ili ili (2mm×2mm pūnaewele) ≥90%.

-Nā mea hana hale: Ua hoʻomohala nā hui e like me Jingsheng Mechatronics, CETC 48, North Huachuang, a me Nasset Intelligent i nā lako epitaxial single-wafer SiC epitaxial me ka hana hoʻonui ʻia.

2. Nā Pūnaehana CVD Planetary Wall Pumehana:

-Nā hiʻohiʻona:E hoʻohana i nā kumu hoʻonohonoho honua no ka ulu nui-wafer i kēlā me kēia pūʻulu, e hoʻomaikaʻi nui ana i ka hoʻopukapuka.

-Nā Hoʻohālike Lunamakaʻāinana:ʻO Aixtron's AIXG5WWC (8x150mm) a me G10-SiC (9x150mm a i ʻole 6x200mm) moʻo.

-hana:No ka 6-'īniha 4H-SiC epitaxial wafers me ka mānoanoa ≤10μm, loaʻa ia ma waena-wafer mānoanoa deviation ± 2.5%, intra-wafer mānoanoa non-uniformity 2%, inter-wafer doping kuʻina deviation ± 5%, a intra-wafer doping ʻano like ʻole o ka hoʻopaʻa ʻana <2%.

-Nā pilikia:Hoʻopaʻa ʻia i nā mākeke kūloko ma muli o ka nele o ka ʻikepili hana pūʻulu, nā pale ʻenehana i ka mahana a me ka hoʻokele kahua kahe, a me ka hoʻomau ʻana i ka R&D me ka hoʻokō nui ʻole.

3. Nā Pūnaehana CVD Kūʻai-wela-wela:

- Nā hiʻohiʻona:E hoʻohana i ke kōkua mechanical waho no ka hoʻololi ʻana o ka substrate kiʻekiʻe, e hōʻemi ana i ka mānoanoa o ka palena palena a me ka hoʻomaikaʻi ʻana i ka ulu ulu epitaxial, me nā pono kūlohelohe i ka mana kīnā.

- Nā Hoʻohālike Lunamakaʻāinana:Nuflare's single-wafer EPIREVOS6 a me EPIREVOS8.

-hana:Loaʻa i ka nui o ka ulu ʻana ma luna o 50μm/h, ka hoʻomalu ʻana o ka defect density ma lalo o 0.1 cm-², a me ka mānoanoa intra-wafer a me ka neʻe ʻana o ka doping non-uniformity o 1% a me 2.6%, kēlā me kēia.

-Hoʻomohala ʻĀina:Ua hoʻolālā nā hui e like me Xingsandai a me Jingsheng Mechatronics i nā mea hana like akā ʻaʻole i hoʻokō i ka hoʻohana nui.

Hōʻuluʻulu manaʻo

Loaʻa i kēlā me kēia ʻano ʻano ʻekolu o ka SiC epitaxial ulu ulu nā hiʻohiʻona ʻokoʻa a noho i nā ʻāpana mākeke kikoʻī e pili ana i nā koi noi. Hāʻawi ka CVD horizontal horizontal wela i ka ulu wikiwiki a me ka maikaʻi kaulike a me ka like ʻole akā he haʻahaʻa haʻahaʻa ka hana ma muli o ka hoʻoili ʻana o ka wafer hoʻokahi. Hoʻonui nui ʻia ka CVD honua pā wela wela i ka hana pono akā ke alo nei i nā pilikia i ka hoʻomalu like ʻana o nā wafer. ʻOi aku ka maikaʻi o Quasi-hot-wall vertical CVD i ka mana kīnā me ka hana paʻakikī a koi i ka mālama nui a me ka ʻike hana.

Ke ulu nei ka ʻoihana, ʻo ka hoʻonui ʻana a me ka hoʻonui ʻana i kēia mau mea hana e alakaʻi i nā hoʻonohonoho hoʻomaʻemaʻe hou ʻia, e pāʻani ana i nā kuleana koʻikoʻi i ka hālāwai ʻana i nā kikoʻī wafer epitaxial like ʻole no ka mānoanoa a me nā koi hemahema.

ʻO nā pono a me nā pōʻino o nā SiC Epitaxial Growth Furnaces

Me ka hoʻomohala mau ʻana o ka ʻoihana, e hoʻokō ʻia kēia mau ʻano mea hana ʻekolu i ka iterative structural optimization a me ka hoʻomaikaʻi ʻana, e alakaʻi ana i nā hoʻonohonoho hoʻomaʻemaʻe hoʻomaʻemaʻe e pili ana i nā kikoʻī wafer epitaxial no ka mānoanoa a me nā hemahema.