E like me kā mākou e ʻike ai, ma ke kahua semiconductor, ʻo ka silika aniani hoʻokahi (Si) ka mea nui loa i hoʻohana ʻia a me ka nui o ka nui o ka semiconductor kumu kumu ma ka honua. I kēia manawa, ʻoi aku ma mua o 90% o nā huahana semiconductor i hana ʻia me ka hoʻohana ʻana i nā mea pilikika. Me ka piʻi nui ʻana o ka noi no nā mea mana kiʻekiʻe a me nā mea uila kiʻekiʻe i ke kahua o ka ikehu hou, ua kau ʻia nā koi koʻikoʻi no nā ʻāpana koʻikoʻi o nā mea semiconductor e like me ka laulā bandgap, breakdown electric field strength, electron saturation rate, and thermal conductivity. Ma lalo o kēia kūlana, hōʻike ʻia nā mea semiconductor bandgap ākea ekalapona kalapona(SiC) ua puka mai ma ke ʻano he mea aloha o nā noi kiʻekiʻe kiʻekiʻe.
Ma ke ʻano he hui semiconductor,kalapona kalaponaHe kakaikahi loa ia ma ke ʻano a ʻike ʻia ma ke ʻano o ka mineral moissanite. I kēia manawa, kokoke i nā carbide silika a pau i kūʻai ʻia ma ka honua i hoʻohui ʻia. Loaʻa i ka Silicon carbide nā mea maikaʻi o ka paʻakikī kiʻekiʻe, ka conductivity thermal kiʻekiʻe, ka paʻa wela maikaʻi, a me ke kahua uila hoʻokaʻawale koʻikoʻi. He mea kūpono ia no ka hana ʻana i nā mea hana semiconductor kiʻekiʻe a me ka mana kiʻekiʻe.
No laila, pehea e hana ʻia ai nā mea hana semiconductor silicon carbide?
He aha ka ʻokoʻa ma waena o ke kaʻina hana ʻoihana silika carbide a me ke kaʻina hana hana maʻamau? E hoʻomaka ana mai kēia pukana, "Nā mea e pili anaMea Hana Kapili SilikaʻO ka hana "e hōʻike i nā mea huna i kēlā me kēia.
I
Ke kahe kaʻina o ka hana ʻana i nā mea hana silika carbide
ʻO ke kaʻina hana o nā mea hana silicon carbide ka mea maʻamau e like me nā mea i hoʻokumu ʻia i ka silicon, ka mea nui me ka photolithography, hoʻomaʻemaʻe, doping, etching, hoʻokumu kiʻiʻoniʻoni, thinning a me nā kaʻina hana ʻē aʻe. Hiki i nā mea hana hana mana ke hoʻokō i nā pono hana o nā mea hana silicon carbide ma o ka hoʻomaikaʻi ʻana i kā lākou laina hana e pili ana i ke kaʻina hana hana silicon. Eia nō naʻe, ʻo nā waiwai kūikawā o nā mea silicon carbide e hoʻoholo ai i kekahi mau kaʻina hana i kāna hana hana pono e hilinaʻi i nā lako kikoʻī no ka hoʻomohala kūikawā e hiki ai i nā mea hana silicon carbide ke kū i ka volta kiʻekiʻe a me ka manawa kiʻekiʻe.
II
ʻO ka hoʻomaka ʻana i nā modules kaʻina hana kūikawā silicon carbide
ʻO nā modules kaʻina hana kūikawā silicon carbide e uhi nui i ka doping injection, ka hana ʻana i ka puka, etching morphology, metallization, a me nā kaʻina hana thinning.
(1) Injection doping: Ma muli o ke kiʻekiʻe o ka ikehu kalapona-silikona paʻa i loko o ka carbide silika, paʻakikī nā ʻātoma haumia e hoʻopuehu i ka carbide silika. I ka hoʻomākaukau ʻana i nā hāmeʻa silicon carbide, hiki ke hoʻokō ʻia ka doping o nā junctions PN e ka implantation ion ma ke kiʻekiʻe wela.
Hoʻohana pinepine ʻia ka doping me nā ion impurity e like me ka boron a me ka phosphorus, a ʻo ka hohonu o ka doping he 0.1μm ~ 3μm. ʻO ka hoʻokomo ʻana i ka ion kiʻekiʻe e hoʻopau i ke ʻano lattice o ka mea carbide silicon ponoʻī. Pono ka annealing kiʻekiʻe e hoʻoponopono i ka pōʻino o ka lattice i hoʻokumu ʻia e ka implantation ion a hoʻopaʻa i ka hopena o ka annealing ma luna o ka ʻili. ʻO nā kaʻina hana koʻikoʻi ka implantation ion kiʻekiʻe a me ka annealing kiʻekiʻe.
Kiʻi 1 Schematic diagram o ka implantation ion a me nā hopena annealing kiʻekiʻe
(2) Ke kūkulu ʻia ʻana o ka puka puka: He mana nui ka maikaʻi o ka interface SiC/SiO2 i ka neʻe ʻana o ke kahawai a me ka hilinaʻi o ka puka o MOSFET. Pono e hoʻomohala i nā kaʻina hana annealing puka puka a me ka post-oxidation annealing no ka uku ʻana i nā paʻa e pili ana i ka interface SiC/SiO2 me nā ʻātoma kūikawā (e like me nā atom nitrogen) e hoʻokō i nā koi hana o ka interface SiC/SiO2 kiʻekiʻe a kiʻekiʻe. ka neʻe ʻana o nā mea hana. ʻO nā kaʻina hana koʻikoʻi, ʻo ia ka gate oxide high-temperature oxidation, LPCVD, a me PECVD.
Kiʻi 2 Kiʻi kiʻi kiʻi o ka hoʻoheheʻe kiʻi ʻoniʻoni maʻamau a me ka hoʻonā wela kiʻekiʻe
(3) Morphology etching: ʻAʻole inert nā mea silicone carbide i loko o nā mea hoʻoheheʻe kemika, a hiki ke hoʻokō pono ʻia ka mana morphology ma o nā ʻano etching maloʻo; pono e hoʻomohala ʻia e like me nā hiʻohiʻona o nā mea carbide silicon, nā mea huna, nā koho etching mask, nā kinoea hui ʻia, ka mana o ka ʻaoʻao, etching rate, sidewall roughness, etc. ʻO nā kaʻina hana koʻikoʻi, ʻo ia ka deposition kiʻiʻoniʻoni lahilahi, photolithography, dielectric film corrosion, a me nā kaʻina etching maloʻo.
Kiʻi 3 kiʻi kiʻi kiʻi o ke kaʻina hili kalapona silika
(4) Metallization: Pono ka electrode kumu o ka mea metala e hana i kahi pilina ohmic haʻahaʻa haʻahaʻa me ka carbide silicon. ʻAʻole wale kēia e koi i ka hoʻoponopono ʻana i ke kaʻina hana hoʻopaʻa metala a me ka hoʻomalu ʻana i ke kūlana interface o ka hoʻopili metala-semiconductor, akā pono pū kekahi i ka annealing wela kiʻekiʻe e hōʻemi i ke kiʻekiʻe o ka pale Schottky a hoʻokō i ka pilina metala-silicon carbide ohmic. ʻO nā kaʻina hana koʻikoʻi, ʻo ia ka metala magnetron sputtering, electron beam evaporation, a me ka hoʻopili wela wikiwiki.
Kiʻi 4 Schematic diagram of magnetron sputtering principle and metallization effect
(5) Thinning kaʻina: Silicon carbide mea i nā hiʻohiʻona o ke kiʻekiʻe paʻakikī, kiʻekiʻe brittleness a me ka haʻahaʻa haʻihaʻi paʻakikī. ʻO kāna kaʻina wili e hoʻopōʻino i ka ʻili wafer a me lalo o ka ʻili. Pono e hoʻomohala ʻia nā kaʻina hana wili hou no ka hoʻokō ʻana i nā pono hana o nā mīkini carbide silika. ʻO nā kaʻina hana koʻikoʻi ka thinning o ka wili discs, film sticking and peeling, etc.
Kiʻi 5 kiʻi kiʻi ʻoniʻoni o ka loina wafer grinding/ thinning
Ka manawa hoʻouna: Oct-22-2024