I ke kaʻina hana hoʻomākaukau wafer, ʻelua mau loulou kumu: ʻo ka hoʻomākaukau ʻana o ka substrate, a ʻo ka hoʻokō ʻana i ke kaʻina epitaxial. ʻO ka substrate, kahi wafer i hana pono ʻia mai ka semiconductor single crystal material, hiki ke hoʻokomo pololei ʻia i loko o ke kaʻina hana wafer ma ke ʻano he kumu e hana ai i nā mea semiconductor, a i ʻole hiki ke hoʻonui ʻia ma o nā kaʻina epitaxial.
No laila, he aha ka denotation? ʻO ka pōkole, ʻo ka epitaxy ka ulu ʻana o kahi papa hou o ka kristal hoʻokahi ma kahi substrate kristal hoʻokahi i hana maikaʻi ʻia (ʻokiʻoki, wili, polishing, etc.). Hiki ke hana ʻia kēia ʻāpana aniani hoʻokahi a me ka substrate i nā mea like a i ʻole nā mea like ʻole, i hiki ke hoʻokō ʻia ka ulu homogeneous a heteroepitaxial e like me ka mea e pono ai. No ka mea, e hoʻonui ʻia ka papa aniani hoʻokahi hou e like me ke ʻano aniani o ka substrate, ua kapa ʻia ʻo ia he papa epitaxial. He mau microns wale nō kona mānoanoa. ʻO ka lawe ʻana i ke kilika ma ke ʻano he laʻana, ʻo ka ulu ʻana o ka silicon epitaxial e ulu i kahi papa o ka silikon me ka ʻano aniani like me ka substrate, ka resistivity controllable a me ka mānoanoa, ma luna o kahi substrate kristal hoʻokahi silika me kahi ʻano aniani kikoʻī. ʻO kahi ʻāpana aniani hoʻokahi silika me ke ʻano lattice maikaʻi loa. Ke ulu ka papa epitaxial ma ka substrate, ua kapa ʻia ka mea holoʻokoʻa he wafer epitaxial.
No ka ʻoihana semiconductor silicon kuʻuna, hana ʻia nā mea hana kiʻekiʻe a me ka mana kiʻekiʻe ma luna o nā wafer silika e hālāwai me kekahi mau pilikia ʻenehana. No ka laʻana, he paʻakikī ke hoʻokō ʻana i nā koi o ka voltage breakdown kiʻekiʻe, ke kūpaʻa ʻana o ka moʻo liʻiliʻi a me ka hāʻule liʻiliʻi o ka saturation voltage ma ka ʻāpana ʻohi. ʻO ka hoʻokomo ʻana i ka ʻenehana epitaxy e hoʻoponopono i kēia mau pilikia. ʻO ka hoʻonā ka ulu ʻana i kahi papa epitaxial resistivity kiʻekiʻe ma luna o kahi substrate silicon haʻahaʻa haʻahaʻa, a laila hana i nā mea hana ma ka papa epitaxial resistivity kiʻekiʻe. Ma kēiaʻano, hāʻawi ka papa epitaxial kiʻekiʻe i ka haʻahaʻa haʻahaʻa kiʻekiʻe no ka mea, aʻo ka haʻahaʻa haʻahaʻa haʻahaʻa e ho'ēmi i ke kū'ē o ka substrate, ma laila e ho'ēmi ai i ka hāʻuleʻana o ka volta saturation, a laila e loaʻa ai i ka voltage breakdown kiʻekiʻe a me ke kaulike liʻiliʻi ma waena o ke kū'ē a me ka pale. hāʻule uila liʻiliʻi.
Eia kekahi, ua hoʻomohala nui ʻia nā ʻenehana epitaxy e like me ka epitaxy phase vapor a me ka epitaxy phase wai o GaAs a me nā mea ʻē aʻe III-V, II-VI a me nā mea semiconductor molecular compound ʻē aʻe a ua lilo i kumu no ka hapa nui o nā mīkini microwave, nā mea optoelectronic a me ka mana. nā mea hana. ʻO nā ʻenehana kaʻina hana pono no ka hana ʻana, ʻoi aku ka maikaʻi o ka noi ʻana o ka molecular beam a me ka metala-organic vapor phase epitaxy ʻenehana i nā papa lahilahi, superlattices, quantum wells, strained superlattices, a me ka atomic-level thin-layer epitaxy i lilo i kahua hou o ka noiʻi semiconductor. ʻO ka hoʻomohala ʻana o "Energy Belt Project" ua kau i kahi kumu paʻa.
E pili ana i nā mea hana semiconductor kolu o ka hanauna, kokoke i nā mea semiconductor āpau e hana ʻia ma ka papa epitaxial, a ʻo ka silicon carbide wafer ponoʻī e lawelawe wale ma ke ʻano he substrate. ʻO ka mānoanoa o nā mea epitaxial SiC, ka hoʻokele kaʻa kaʻa a me nā ʻāpana ʻē aʻe e hoʻoholo pololei i nā ʻano uila like ʻole o nā mea SiC. Hāʻawi nā ʻenehana carbide silikon no nā noi kiʻekiʻe-voltage i nā koi hou no nā ʻāpana e like me ka mānoanoa o nā mea epitaxial a me ka ʻike ʻana o ka mea lawe. No laila, he hana koʻikoʻi ka ʻenehana silicon carbide epitaxial i ka hoʻohana piha ʻana i ka hana o nā mea hana silicon carbide. Hoʻokumu ʻia ka hoʻomākaukau ʻana o nā mea mana SiC āpau i nā wafers epitaxial SiC kiʻekiʻe. ʻO ka hana ʻana o nā papa epitaxial kahi mea nui o ka ʻoihana semiconductor bandgap ākea.
Ka manawa hoʻouna: Mei-06-2024