Ke kumu o ka inoa "Epitaxial Wafer"
ʻO ka hoʻomākaukau ʻana i ka wafer he ʻelua mau ʻanuʻu nui: ka hoʻomākaukau substrate a me ke kaʻina epitaxial. Hana ʻia ka substrate me ka semiconductor single crystal material a hana maʻamau e hana i nā mea semiconductor. Hiki iā ia ke hana i ka hana epitaxial e hana i kahi wafer epitaxial. ʻO ka Epitaxy e pili ana i ke kaʻina hana o ka ulu ʻana i kahi papa aniani hou ma kahi substrate aniani hoʻokahi i mālama pono ʻia. Hiki i ke aniani hoʻokahi hou ke ʻano like me ka substrate (homogeneous epitaxy) a i ʻole kekahi mea ʻokoʻa (heterogeneous epitaxy). No ka ulu ʻana o ka papa aniani hou e like me ke ʻano aniani o ka substrate, ua kapa ʻia ʻo ia he papa epitaxial. ʻO ka wafer me ka papa epitaxial i kapa ʻia he wafer epitaxial (epitaxial wafer = epitaxial layer + substrate). ʻO nā mea hana i hana ʻia ma ka papa epitaxial ua kapa ʻia ʻo "forward epitaxy," aʻo nā mea hana i hana ʻia ma ka substrate i kapa ʻia ʻo "reverse epitaxy," kahi e lawelawe ai ka papa epitaxial ma ke ʻano he kākoʻo.
Homogeneous a me Heterogeneous Epitaxy
▪Homogeneous Epitaxy:Hana ʻia ka papa epitaxial a me ka substrate o ka mea like: e laʻa, Si / Si, GaAs / GaAs, GaP / GaP.
▪Heterogeneous Epitaxy:Hana ʻia ka papa epitaxial a me ka substrate i nā mea like ʻole: e laʻa, Si / Al₂O₃, GaS / Si, GaAlAs / GaAs, GaN / SiC, etc.
Na Wafera Poni
He aha nā pilikia e hoʻoponopono ai ʻo Epitaxy?
ʻAʻole lawa nā lako aniani hoʻokahi wale nō e hoʻokō i nā koi paʻakikī o ka hana ʻana i nā mea hana semiconductor. No laila, i ka hopena o ka makahiki 1959, ua hoʻomohala ʻia ka ʻenehana ulu ʻana o nā mea aniani hoʻokahi i kapa ʻia ʻo epitaxy. Akā pehea i kōkua pono ai ka ʻenehana epitaxial i ka holomua o nā mea? No ke silika, ua hana ʻia ka hoʻomohala ʻana o ka epitaxy silicon i kahi manawa koʻikoʻi i ka wā i kū ai ka hana ʻana o nā transistors kiʻekiʻe kiʻekiʻe kiʻekiʻe i nā pilikia nui. Mai ka hiʻohiʻona o nā loina transistor, ʻo ka loaʻa ʻana o ke alapine kiʻekiʻe a me ka mana e pono ai ke kiʻekiʻe o ka puʻupuʻu haʻihaʻi o ka ʻāina ʻohi, a haʻahaʻa ke kūpaʻa o ka series, ʻo ia hoʻi ka liʻiliʻi o ka volta saturation. Pono ka mea mua i ka resistivity kiʻekiʻe i ka mea hōʻiliʻili, aʻo ka mea hope e koi i ka resistivity haʻahaʻa, kahi e hana ai i kahi kue. ʻO ka hōʻemi ʻana i ka mānoanoa o ka ʻāina ʻohi e hōʻemi i ke kūʻē ʻana i ka moʻo e hana i ka wafer silika i lahilahi a palupalu no ka hana ʻana, a ʻo ka hoʻohaʻahaʻa ʻana i ka resistivity e kūʻē me ka koi mua. ʻO ka hoʻomohala ʻana i ka ʻenehana epitaxial i hoʻoholo maikaʻi i kēia pilikia. ʻO ka hoʻonā ka ulu ʻana i kahi papa epitaxial resistivity kiʻekiʻe ma kahi substrate haʻahaʻa haʻahaʻa. Hana ʻia ka mea hana ma ka papa epitaxial, e hōʻoiaʻiʻo ana i ka voltage breakdown kiʻekiʻe o ka transistor, ʻoiai ka haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa e hoʻemi i ke kūpaʻa kumu a hoʻohaʻahaʻa i ka volta saturation, e hoʻonā i ka kuee ma waena o nā koi ʻelua.
Eia kekahi, ʻo nā ʻenehana epitaxial no III-V a me II-VI pūhui semiconductor e like me GaAs, GaN, a me nā mea ʻē aʻe, me ka vapor phase a me ka wai wai epitaxy, ua ʻike i nā holomua nui. Ua lilo kēia mau ʻenehana i mea nui no ka hana ʻana i nā microwave he nui, optoelectronic, a me nā mea mana. ʻO ka mea nui, ua hoʻohana maikaʻi ʻia nā ʻenehana e like me ka molecular beam epitaxy (MBE) a me ka metala-organic chemical vapor deposition (MOCVD) i nā papa lahilahi, superlattices, quantum wells, strained superlattices, a me nā ʻāpana epitaxial lahilahi atomic-scale, e kau ana i kumu paʻa no ka. ka hoʻomohala ʻana i nā kahua semiconductor hou e like me "band engineering."
Ma nā noi kūpono, hana ʻia ka hapa nui o nā hāmeʻa semiconductor ākea-bandgap ma nā papa epitaxial, me nā mea e like me ka silicon carbide (SiC) i hoʻohana wale ʻia ma ke ʻano he substrates. No laila, ʻo ka mālama ʻana i ka papa epitaxial kahi mea koʻikoʻi i ka ʻoihana semiconductor wide-bandgap.
ʻenehana Epitaxy: ʻEhiku mau hiʻohiʻona nui
1. Hiki i ka Epitaxy ke ulu i kahi papa pale pale kiʻekiʻe (a haʻahaʻa paha) ma kahi substrate resistivity haʻahaʻa (a kiʻekiʻe).
2. ʻAe ka Epitaxy i ka ulu ʻana o nā papa epitaxial ʻano N (a i ʻole P) ma luna o nā substrates ʻano P (a i ʻole N), e hana pololei i kahi hui PN me ka ʻole o nā pilikia uku e kū mai ana i ka wā e hoʻohana ai i ka diffusion e hana i kahi hui PN ma kahi substrate kristal hoʻokahi.
3. Ke hui pū ʻia me ka ʻenehana mask, hiki ke hoʻokō ʻia ka ulu ʻana epitaxial koho i nā wahi kikoʻī, e hiki ai i ka hana ʻana o nā kaapuni i hoʻohui ʻia a me nā mea hana me nā hale kūikawā.
4. ʻO ka ulu ʻana o ka epitaxial e hiki ai ke hoʻomalu i nā ʻano doping a me nā ʻano hoʻohālikelike, me ka hiki ke hoʻokō i nā loli abrupt a i ʻole ka hoʻololi ʻana i ka noʻonoʻo.
5. Hiki i ka Epitaxy ke ulu i nā pūhui heterogeneous, multi-layered, multi-component me nā haku mele like ʻole, me nā ʻāpana ultra-thin.
6. Hiki ke ulu ka epitaxial ma nā mahana ma lalo o ka helu heheʻe o ka mea, me ka hiki ke hoʻomalu ʻia ka ulu ʻana, e ʻae ai i ka pololei o ka pae atomic i ka mānoanoa papa.
7. Hiki i ka Epitaxy ke ulu i nā ʻāpana aniani hoʻokahi o nā mea hiki ʻole ke huki ʻia i loko o nā kristal, e like me GaN a me ternary/quaternary compound semiconductor.
Nā Papa Epitaxial like ʻole a me nā kaʻina hana Epitaxial
I ka hōʻuluʻulu ʻana, hāʻawi nā papa epitaxial i kahi hoʻolālā kristal ʻoi aku ka maʻalahi a maʻalahi hoʻi ma mua o nā substrates bulk, he mea pono ia no ka hoʻomohala ʻana i nā mea holomua.
Ka manawa hoʻouna: Dec-24-2024