ʻO CVD Bulk Silicon Carbide (SiC)
Nānā nui:CVDcarbide silika nui (SiC)he mea i ʻimi nui ʻia i loko o nā lako etching plasma, nā noi hoʻoili wela wikiwiki (RTP), a me nā kaʻina hana semiconductor ʻē aʻe. ʻO kona ʻano mechanical, kemikala, a me nā mea wela e lilo ia i mea kūpono no nā noi ʻenehana holomua e koi ana i ka pololei kiʻekiʻe a me ka lōʻihi.
Nā noi o CVD Bulk SiC:He mea koʻikoʻi ʻo Bulk SiC i ka ʻoihana semiconductor, ʻoi aku hoʻi i nā ʻōnaehana etching plasma, kahi e loaʻa ai nā ʻāpana e like me nā apo kikoʻī, nā ʻauʻau hau, nā apo lihi, a me nā platens e pōmaikaʻi mai ka SiC kūʻokoʻa i ka corrosion a me ka thermal conductivity. Hoʻonui ʻia kona hoʻohana ʻana iRTPnā ʻōnaehana ma muli o ka hiki iā SiC ke kū i ka piʻi ʻana o ka wela me ka ʻole o ka hōʻino nui ʻana.
Ma kahi o nā mea hana etching, CVDnui SiCmakemake ʻia i nā umu diffusion a me nā kaʻina ulu kristal, kahi e koi ʻia ai ke kūpaʻa wela kiʻekiʻe a me ke kūʻē ʻana i nā wahi kemika paʻakikī. Hoʻolilo kēia mau ʻano iā SiC i mea koho no nā noi koi nui e pili ana i nā wela kiʻekiʻe a me nā kinoea corrosive, e like me nā mea i loaʻa ka chlorine a me ka fluorine.
ʻO nā mea maikaʻi o ka CVD Bulk SiC Components:
•Kiʻekiʻe kiʻekiʻe:Me ka mānoanoa o 3.2 g/cm³,CVD nui SiCpaʻa loa nā ʻāpana i ka ʻaʻahu a me ka hopena mechanical.
•ʻOi aku ka maikaʻi o ka wela wela:Hāʻawi i ka conductivity wela o 300 W/m·K, hoʻokele maikaʻi ʻo SiC nui i ka wela, i mea kūpono no nā ʻāpana i ʻike ʻia i nā pōʻai wela.
•Kū'ē Kemika Kūikawā:ʻO ka haʻahaʻa haʻahaʻa o SiC me nā kinoea etching, me ka chlorine a me ka fluorine-based chemical, e hōʻoia i ka lōʻihi o ke ola o nā mea.
•Hiki ke hoʻololi i ke kū'ē: ʻO nā SiC nui CVDhiki ke hoʻopilikino ʻia ka resistivity i loko o ka laulā o 10⁻²–10⁴ Ω-cm, hiki ke hoʻololi ʻia i nā pono hana etching a me semiconductor.
•Koefficient Hoʻonui Thermal:Me ka helu hoʻonui wela o 4.8 x 10⁻⁶/°C (25–1000°C), pale ʻo CVD bulk SiC i ka haʻalulu wela, e mālama ana i ke kūpaʻa dimensional ʻoiai i ka wā o ka hoʻomehana wikiwiki a me ka hoʻoilo.
•Ka lōʻihi i loko o ka plasma:ʻAʻole hiki ke ʻike i ka plasma a me nā kinoea reactive i nā kaʻina semiconductor, akāCVD nui SiChāʻawi i ke kūpaʻa kiʻekiʻe i ka corrosion a me ka hoʻohaʻahaʻa ʻana, e hōʻemi ana i ke alapine hoʻololi a me nā kumukūʻai mālama holoʻokoʻa.
Nā kikoʻī kikoʻī:
•anawaena:ʻOi aku ma mua o 305 mm
•Kū'ē:Hiki ke hoʻololi i loko o 10⁻²–10⁴ Ω-cm
•ʻO ka mānoanoa:3.2 g/cm³
•ʻO ka wela wela:300 W/m·K
•Koefficient Hoʻonui Thermal:4.8 x 10⁻⁶/°C (25–1000°C)
Hoʻopilikino a me ka hikiwawe:Ma kaSemicera Semiconductor, hoʻomaopopo mākou e koi ana kēlā me kēia noi semiconductor i nā kikoʻī like ʻole. ʻO ia ke kumu i hoʻonohonoho pono ʻia ai kā mākou ʻāpana SiC nui CVD, me ka resistivity hiki ke hoʻololi ʻia a me nā ana i hoʻohālikelike ʻia e kūpono i kāu pono lako. Inā ʻoe e ʻimi nei i kāu ʻōnaehana etching plasma a i ʻole e ʻimi ana i nā mea paʻa i ka RTP a i ʻole nā kaʻina diffusion, hāʻawi kā mākou CVD bulk SiC i ka hana like ʻole.
