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MOCVD Substrate Heater, Mea Pumehana No MOCVD
Mea hoʻomehana graphite:
Hoʻohana ʻia nā mea hoʻomehana graphite i ka umu wela wela me ka mahana i hiki i ka 2200 degere ma ke kaiapuni vacuum a me 3000 degere i loko o ka deoxidized a hoʻokomo ʻia ke kinoea.
ʻO nā hiʻohiʻona nui o ka graphite heater
1. kūlike o ka hoʻolālā hoʻomehana.
2. maikaʻi uila conductivity a kiʻekiʻe uila ukana.
3. pale ʻana i ka corrosion.
4. inoxidizability.
5. kiʻekiʻe kemika maemae.
6. ikaika mechanical kiʻekiʻe.
ʻO ka pōmaikaʻi, ʻoi aku ka maikaʻi o ka ikehu, ka waiwai kiʻekiʻe a me ka mālama haʻahaʻa.
Hiki iā mākou ke hana i ka anti-oxidation a me ke ola lōʻihi o ka graphite crucible, graphite mold a me nā ʻāpana āpau o ka graphite heater.
Pākuʻi Kimia
Pōmaikaʻi: Pale wela kiʻekiʻe
Hoʻohana: MOCVD/Ihi hoʻoheheʻe/Wāna wela
ʻOi aku ka nui: 1.68-1.91g/cm3
Ka ikaika wiliwili: 30-46Mpa
Kū'ē: 7-12μΩm
Nā palena nui o ka mea hoʻomehana graphite
| Hōʻike ʻenehana | VET-M3 |
| ʻAiʻi Nui (g/cm3) | ≥1.85 |
| Maʻiʻo Lehu (PPM) | ≤500 |
| Kahakai ʻoʻoleʻa | ≥45 |
| Kū'ē Kūikawā (μ.Ω.m) | ≤12 |
| ʻO ka ikaika ʻoluʻolu (Mpa) | ≥40 |
| Ka ikaika hoʻoemi (Mpa) | ≥70 |
| Max. Ka nui o ka palaoa (μm) | ≤43 |
| Coefficient o ka hoonui wela Mm/°C | ≤4.4*10-6 |
ʻO ka mea hoʻomehana graphite no ka umu uila he mau waiwai o ka pale ʻana i ka wela, ke kū ʻana o ka oxidation, ka conductivity uila maikaʻi a me ka ʻoi aku o ka ikaika mechanical. Hiki iā mākou ke mīkini i nā ʻano mea hoʻomehana graphite e like me nā hoʻolālā o nā mea kūʻai aku.
ʻIkepili Hui
ʻO WeiTai Energy Technology Co., Ltd. kahi mea hoʻolako alakaʻi o nā seramika semiconductor kiʻekiʻe a ʻo ka mea hana wale nō ma Kina e hiki ke hāʻawi like i ka silicon carbide ceramic maʻemaʻe kiʻekiʻe (ʻoi aku ka Recrystallized SiC) a me ka uhi CVD SiC. Eia kekahi, ua paʻa pū kā mākou hui i nā māla seramika e like me ke alumina, alumini nitride, zirconia, a me ka silicon nitride, etc.
ʻO kā mākou huahana nui e like me: silicon carbide etching disc, silicon carbide boat tow, silicon carbide wafer boat (Photovoltaic & Semiconductor), silicon carbide furnace tube, silicon carbide cantilever hoe, silicon carbide chucks, silicon carbide beam, a me ka CVD SiC coating a me TaC ka uhi ʻana. ʻO nā huahana i hoʻohana nui ʻia i ka semiconductor a me nā ʻoihana photovoltaic, e like me nā mea hana no ka ulu kristal, epitaxy, etching, packaging, coating and diffusion furnaces, etc.
Loaʻa i kā mākou hui nā lako hana piha e like me ka molding, sintering, processing, coating equipment, etc., hiki ke hoʻopau i nā loulou pono āpau o ka hana huahana a loaʻa ka mana kiʻekiʻe o ka maikaʻi o ka huahana; Hiki ke kohoʻia ka papahana hoʻolālā maikaʻi e like me nā pono o ka huahana, e hopena i ka uku haʻahaʻa a me ka hāʻawiʻana i nā mea kūʻai i nā huahana hoʻokūkū; Hiki iā mākou ke hoʻonohonoho maʻalahi a maikaʻi hoʻi i ka hana e pili ana i nā koi hoʻouna kauoha a me ka hui pū me nā ʻōnaehana hoʻokele kauoha pūnaewele, e hāʻawi ana i nā mea kūʻai aku me ka wikiwiki a me ka hōʻoia ʻana i ka manawa hoʻouna.
