Semiconductor Silicon epitaxy GaN

ʻO ka wehewehe pōkole:

ʻO Semicera Energy Technology Co., Ltd. kahi mea hoʻolako alakaʻi o nā seramika semiconductor kiʻekiʻe a ʻo ka mea hana wale nō ma Kina e hiki ke hāʻawi manawaleʻa i ka silicon carbide ceramic (ʻoi aku ka Recrystallized SiC) a me ka uhi CVD SiC. Eia kekahi, ua paʻa pū kā mākou hui i nā māla seramika e like me ke alumina, alumini nitride, zirconia, a me ka silicon nitride, etc.

 

Huahana Huahana

Huahana Huahana

Epitaxy GaN e pili ana i ka silikon

Hōʻike huahana

Hāʻawi kā mākou hui i nā lawelawe kaʻina hana hoʻoheheʻe SiC ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe. e hana ana i ka papa pale SIC.

Nā hiʻohiʻona nui:

1. Kiʻekiʻe wela oxidation kū'ē:

ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.

2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.

3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.

4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.

Nā kiko'ī nui o ka CVD-SIC Coating

Nā Waiwai SiC-CVD

Hoʻokumu Crystal

Māhele FCC β

ʻO ka mānoanoa

g/cm ³

3.21

ʻoʻoleʻa

ʻO ka paʻakikī o Vickers

2500

Ka nui o ka palaoa

μm

2~10

Maemae Kemika

%

99.99995

Kaha Wela

J·kg-1 ·K-1

640

Mahana Sublimation

2700

Ikaika Felexural

MPa (RT 4-point)

415

ʻO Young's Modulus

Gpa (4pt piko, 1300 ℃)

430

Hoʻonui wela (CTE)

10-6K-1

4.5

ʻO ke kau wela wela

(W/mK)

300

Kahi hana Semicera
Kahi hana Semicera 2
mīkini lako
ʻO ka hana CNN, hoʻomaʻemaʻe kemika, ka uhi CVD
ʻO kā mākou lawelawe

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