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ʻO ka uhi CVD-SiCLoaʻa nā hiʻohiʻona o ka hoʻolālā like ʻole, nā mea paʻa, ke kūpaʻa wela kiʻekiʻe, ka pale ʻana i ka oxidation, ka maʻemaʻe kiʻekiʻe, ka pale ʻana i ka waikawa & alkali a me ka reagent organik, me nā waiwai kino a me nā kemika.
Ke hoʻohālikelike ʻia me nā mea graphite maʻemaʻe kiʻekiʻe, hoʻomaka ka graphite e oxidize ma 400C, ka mea e hoʻopau ai i ka pauka ma muli o ka oxidation, ka hopena i ka pollution kaiapuni i nā ʻaoʻao peripheral a me nā keʻena māmā, a hoʻonui i nā haumia o ke kaiapuni maʻemaʻe kiʻekiʻe.
Eia naʻe,Ka uhi ʻana o SiChiki ke mālama i ka paʻa kino a me ke kemika ma 1600 degere, hoʻohana nui ʻia i ka ʻoihana hou, ʻoi aku hoʻi i ka ʻoihana semiconductor.
Nā hiʻohiʻona nui
1 .High maemae SiC uhi graphite
2. ʻOi aku ka maikaʻi o ka wela a me ke kūlike o ka wela
3. MaikaʻiUa uhi ʻia ʻo SiC crystalno ka ili pahee
4. Kiʻekiʻe ka lōʻihi e kū'ē i ka hoʻomaʻemaʻe kemika
ʻO nā kikoʻī nui o ka CVD-SIC Coatings:
| SiC-CVD | ||
| ʻO ka mānoanoa | (g/cc) | 3.21 |
| Ka ikaika wiliwili | (Mpa) | 470 |
| Hoʻonui wela | (10-6/K) | 4 |
| ʻO ke kau wela wela | (W/mK) | 300 |
Hoʻopili a hoʻouna
Hiki ke hoolako:
10000 ʻāpana / ʻāpana i kēlā me kēia mahina
Puke a me ka lawe ʻana:
Hoʻopili: Kūʻai maʻamau & ikaika
ʻeke poli + pahu + pahu pahu + pallet
Awa:
Ningbo/Shenzhen/Shanghai
Ka manawa o waena o ka hoʻomaka a i ka wā pau:
| Nui (Nā ʻāpana) | 1 – 1000 | >1000 |
| Est. Manawa(lā) | 30 | E kūkākūkā ʻia |
