Hōʻike huahana
4h-n 4 iniha 6 iniha dia100mm sic hua wafer 1mm manoanoa no ka ulu ana
Ka nui maʻamau/2ʻīniha/3ʻīniha/4ʻīniha/6ʻīniha 6H-N/4H-SEMI/ 4H-N SIC ingots/Maʻemaʻe kiʻekiʻe 4H-N 4ʻīniha 6 iniha dia 150mm silicon carbide one crystal (sic) substrates wafersS/ Customzied as-cut sic wafersProduction 4inch papa 4H-N 1.5mm SIC Wafers no ke aniani hua
E pili ana i ka Silicon Carbide (SiC)Crystal
ʻO Silicon carbide (SiC), i ʻike ʻia ʻo carborundum, he semiconductor i loaʻa ke silikoni a me ke kalapona me ke ʻano kemika SiC. Hoʻohana ʻia ʻo SiC i nā mea uila semiconductor e hana ana i nā wela kiʻekiʻe a i ʻole nā voltages kiʻekiʻe, a i ʻole nā mea ʻelua. nā LED mana.
wehewehe
| Waiwai | 4H-SiC, Hoʻokahi Crystal | 6H-SiC, Hoʻokahi Crystal |
| Nā ʻāpana Lattice | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Kakau ʻana | ABCB | ABCACB |
| Mohs Paʻakikī | ≈9.2 | ≈9.2 |
| ʻO ka mānoanoa | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Pākuʻi Hoʻonui | 4-5×10-6/K | 4-5×10-6/K |
| Papa Hoʻohālua @750nm | ʻaʻole = 2.61 | ʻaʻole = 2.60 |
| Dielectric mau | c~9.66 | c~9.66 |
| Hoʻolima wela (N-ʻano, 0.02 ohm.cm) | a~4.2 W/cm·K@298K |
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| ʻO ka hoʻoili wela (Semi-insulating) | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Kahua Uila Wehewehe | 3-5×106V/cm | 3-5×106V/cm |
| ʻO ka holo holo ʻana o ka Saturation | 2.0×105m/s | 2.0×105m/s |
