SiC Cantilever hoeke hoʻohana ʻia nei i loko o ka umu uhi uhi diffusion o ka ʻoihana photovoltaic no ka uhi ʻana i nā wafers silikon monocrystalline a me polycrystalline. ʻO kona hiʻohiʻona e hiki ai iā ia ke kū i ka wela kiʻekiʻe a me ka corrosion, e hāʻawi ana i ke ola lōʻihi.
ʻO kaSiC Cantilever hoehāʻawi i nā waʻa SiC / quartz waʻa e lawe ana i nā wafer silika i loko o ka pahu umu hoʻoheheʻe wela kiʻekiʻe.
ʻO ka lōʻihi o kā mākouSiC Cantilever hoemai 1,500 a 3,500 mm.ʻO SiC Cantilever hoeHiki ke hana ʻia ka nui e like me ka kikoʻī o ka mea kūʻai aku.
Nā waiwai kino o Recrystallized Silicon Carbide | |
Waiwai | Waiwai maʻamau |
Mahana hana (°C) | 1600°C (me ka oxygen), 1700°C (hoemi kaiapuni) |
maʻiʻo SiC | > 99.96% |
Maikaʻi Si manuahi | < 0.1% |
ʻAno nui | 2.60-2.70 g/cm3 |
ʻIke ʻia ka porosity | < 16% |
Ka ikaika hoʻoemi | > 600 MPa |
Ka ikaika kulou anu | 80-90 MPa (20°C) |
Ka ikaika piko wela | 90-100 MPa (1400°C) |
Hoʻonui wela @1500°C | 4.70 10-6/°C |
ʻO ka wela wela @1200°C | 23 W/m•K |
Modulus elastic | 240 GPa |
Ke kū'ē i ka ha'alulu wela | Maikaʻi loa |