Ka SemiceraSiC Cantilever Wafer hoeua hoʻolālā ʻia e hoʻokō i nā koi o ka hana semiconductor hou. ʻO kēiahoe waferhāʻawi i ka ikaika mechanical maikaʻi a me ke kūpaʻa wela, he mea koʻikoʻi no ka lawelawe ʻana i nā wafers i nā wahi wela kiʻekiʻe.
Hiki i ka hoʻolālā cantilever SiC ke hoʻokomo pono i ka wafer, e hōʻemi ana i ka pōʻino i ka wā o ka lawelawe ʻana. ʻO kāna conductivity thermal kiʻekiʻe e hōʻoia i ka paʻa o ka wafer ma lalo o nā kūlana koʻikoʻi, he mea koʻikoʻi no ka mālama pono ʻana i ka hana.
Ma waho aʻe o kāna mau pono hana, ʻo Semicera'sSiC Cantilever Wafer hoehāʻawi pū kekahi i nā pono i ke kaumaha a me ka lōʻihi. ʻO ka hana maʻalahi ka mea maʻalahi i ka lawelawe a hoʻohui i nā ʻōnaehana i loaʻa, ʻoiai ʻo ka mea kiʻekiʻe kiʻekiʻe SiC e hōʻoiaʻiʻo i ka lōʻihi mau loa ma lalo o nā kūlana koi.
| Nā waiwai kino o Recrystallized Silicon Carbide | |
| Waiwai | Waiwai maʻamau |
| Mahana hana (°C) | 1600°C (me ka oxygen), 1700°C (hoemi kaiapuni) |
| maʻiʻo SiC | > 99.96% |
| Maikaʻi Si manuahi | < 0.1% |
| ʻAno nui | 2.60-2.70 g/cm3 |
| ʻIke ʻia ka porosity | < 16% |
| Ka ikaika hoʻoemi | > 600 MPa |
| Ka ikaika kulou anu | 80-90 MPa (20°C) |
| Ka ikaika piko wela | 90-100 MPa (1400°C) |
| Hoʻonui wela @1500°C | 4.70 10-6/°C |
| ʻO ka wela wela @1200°C | 23 W/m•K |
| Modulus elastic | 240 GPa |
| Ke kū'ē i ka ha'alulu wela | Maikaʻi loa |
