SemiceraʻO Silicon Carbide i uhi ʻiahe pale pale hana kiʻekiʻe i hana ʻia me ka mea paʻakikī paʻakikī loa a me ka ʻaʻahu-kūpono silicon carbide (SiC). Hoʻokomo pinepine ʻia ka uhi ʻana ma ka ʻili o ka substrate e ka CVD a i ʻole PVD kaʻina meʻāpana kalapona silika, hāʻawi maikaʻi loa i ke kūʻai ʻana i ka corrosion a me ke kūpaʻa wela kiʻekiʻe. No laila, hoʻohana nui ʻia ka Silicon Carbide Ceramic Coating i nā mea nui o nā lako hana semiconductor.
I ka hana semiconductor,Ka uhi ʻana o SiChiki ke pale i nā wela kiʻekiʻe loa a hiki i ka 1600 ° C, no laila ua hoʻohana pinepine ʻia ʻo Silicon Carbide Ceramic Coating ma ke ʻano he pale pale no nā mea hana a i ʻole nā mea hana e pale ai i ka pōʻino i ka wela kiʻekiʻe a i ʻole nā kino corrosive.
I ka manawa like,ka uhi ʻia ʻana o ka silika carbidehiki ke pale i ka erosion o nā waikawa, alkalis, oxides a me nā reagents kemika ʻē aʻe, a he kiʻekiʻe ke kūpaʻa corrosion i nā ʻano mea kemika. No laila, kūpono kēia huahana no nā wahi corrosive like ʻole i ka ʻoihana semiconductor.
Eia kekahi, ke hoʻohālikelike ʻia me nā mea seramika ʻē aʻe, ʻoi aku ka kiʻekiʻe o ka conductivity thermal o SiC a hiki ke hoʻokō pono i ka wela. Hoʻoholo kēia hiʻohiʻona i nā kaʻina semiconductor e koi ai i ka mana wela pololei, ka conductivity thermal kiʻekiʻe oʻO Silicon Carbide i uhi ʻiakōkua i ka hoʻopuehu like ʻana i ka wela, pale i ka wela nui kūloko, a hōʻoia i ka hana ʻana o ka hāmeʻa i ka wela maikaʻi loa.
| Nā waiwai kino kumu o ka CVD sic coating | |
| Waiwai | Waiwai maʻamau |
| Hoʻokumu Crystal | FCC β phase polycrystalline, ka mea nui (111). |
| ʻO ka mānoanoa | 3.21 g/cm³ |
| ʻoʻoleʻa | 2500 Vickers paakiki（500g haawe） |
| ʻOiʻi palaoa | 2~10μm |
| Maemae Kemika | 99.99995% |
| Kaha Wela | 640 J·kg-1·K-1 |
| Mahana Sublimation | 2700 ℃ |
| Ikaika Flexural | 415 MPa RT 4-point |
| ʻO Young's Modulus | 430 Gpa 4pt piko, 1300 ℃ |
| ʻO ka hoʻoili wela | 300W·m-1·K-1 |
| Hoʻonui wela (CTE) | 4.5×10-6K-1 |
