ʻO SemiceraSilicon Carbide Epitaxyua hana ʻia e hoʻokō i nā koi koʻikoʻi o nā noi semiconductor hou. Ma ka hoʻohana ʻana i nā ʻenehana ulu epitaxial holomua, hōʻoia mākou e hōʻike ana kēlā me kēia papa silicon carbide i ke ʻano crystalline maikaʻi loa, kūlike, a me ka liʻiliʻi liʻiliʻi. He mea koʻikoʻi kēia mau hiʻohiʻona no ka hoʻomohala ʻana i nā uila uila hana kiʻekiʻe, kahi i mea nui ai ka pono a me ka hoʻokele wela.
ʻO kaSilicon Carbide Epitaxykaʻina hana ma Semicera e hana i nā papa epitaxial me ka mānoanoa pololei a me ka mana doping, e hōʻoiaʻiʻo ana i ka hana maʻamau ma waena o nā ʻano mea hana. Pono kēia pae o ka pololei no nā noi i nā kaʻa uila, nā ʻōnaehana ikehu hou, a me nā kamaʻilio kiʻekiʻe, kahi e koʻikoʻi ai ka hilinaʻi a me ka pono.
Eia kekahi, ʻo SemiceraSilicon Carbide Epitaxyhāʻawi i ka hoʻonui ʻia ʻana o ka thermal conductivity a me ke kiʻekiʻe kiʻekiʻe o ka haʻihaʻi uila, e lilo ia i koho i makemake ʻia no nā mea hana e hana ana ma lalo o nā kūlana koʻikoʻi. Hāʻawi kēia mau waiwai i ka lōʻihi o ke ola ʻana o ka mīkini a me ka hoʻomaikaʻi ʻana i ka ʻōnaehana holoʻokoʻa holoʻokoʻa, ʻoi aku ka nui o ka mana kiʻekiʻe a me ka wela kiʻekiʻe.
Hāʻawi pū ʻo Semicera i nā koho hoʻoponopono noSilicon Carbide Epitaxy, e ʻae ana i nā hāʻina i hoʻopaʻa ʻia i kūpono i nā koi pono o ka mīkini. No ka noiʻi a i ʻole ka hana nui, ua hoʻolālā ʻia kā mākou papa epitaxial e kākoʻo i ka hanauna hou o nā mea hou semiconductor, e hiki ai i ka hoʻomohala ʻana i nā mea uila ʻoi aku ka ikaika, kūpono, a hilinaʻi.
Ma ka hoʻohui ʻana i ka ʻenehana ʻokiʻoki a me nā kaʻina hana hoʻomalu maikaʻi, hōʻoia ʻo Semicera i kā mākouSilicon Carbide EpitaxyʻAʻole kū wale nā huahana akā ʻoi aku i nā kūlana ʻoihana. ʻO kēia kūpaʻa i ka maikaʻi e hana i kā mākou papa epitaxial i kumu kūpono no nā noi semiconductor kiʻekiʻe, e hoʻokaʻawale i ke ala no ka holomua o ka uila uila a me ka optoelectronics.
Nā mea | Paahana | Ka noiʻi | Dummy |
Nā Kūlana Crystal | |||
Polytype | 4H | ||
Ua hewa ka hoʻonohonoho ʻana o ka ʻili | <11-20 >4±0.15° | ||
Nā Kūlana Uila | |||
Dopant | n-ʻano Nitrogen | ||
Kū'ē | 0.015-0.025ohm·cm | ||
Nā Kūlana Mechanical | |||
Anawaena | 150.0±0.2mm | ||
mānoanoa | 350±25 μm | ||
Kūlana pālahalaha mua | [1-100]±5° | ||
Ka lōʻihi pālahalaha mua | 47.5±1.5mm | ||
palahalaha lua | ʻAʻohe | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Kakaka | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
'Oka (AFM) mua (Si-maka) | Ra≤0.2nm (5μm*5μm) | ||
Hoʻolālā | |||
Micropipe mānoanoa | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Metala haumia | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
ʻAno o mua | |||
Imua | Si | ||
Hoʻopau ʻili | Si-maka CMP | ||
Nā ʻāpana | ≤60ea/wafer (nui≥0.3μm) | NA | |
Nā ʻōpala | ≤5ea/mm. Ka lōʻihi huila ≤Diameter | ʻO ka lōʻihi huila≤2*Diameter | NA |
ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination | ʻAʻohe | NA | |
Nā ʻāpana lihi/indents/fracture/papa hex | ʻAʻohe | ||
Nā wahi polytype | ʻAʻohe | ʻĀpana huila≤20% | ʻĀpana huila≤30% |
Hōʻailona laser mua | ʻAʻohe | ||
ʻAno o hope | |||
Hoʻopau hope | C-maka CMP | ||
Nā ʻōpala | ≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena | NA | |
Nā pōʻino hope (nā ʻāpana lihi/indents) | ʻAʻohe | ||
ʻōkalakala kua | Ra≤0.2nm (5μm*5μm) | ||
Hōʻailona laser hope | 1 mm (mai ka lihi luna) | ||
Kaulana | |||
Kaulana | Chamfer | ||
Hoʻopili ʻia | |||
Hoʻopili ʻia | Epi-mākaukau me ka hoʻopaʻa ʻumeke Puke cassette nui-wafer | ||
*Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD. |