Silicon Carbide Epitaxy

ʻO ka wehewehe pōkole:

Silicon Carbide Epitaxy- Nā papa epitaxial kiʻekiʻe i hoʻohālikelike ʻia no nā noi semiconductor holomua, e hāʻawi ana i ka hana ʻoi aku ka maikaʻi a me ka hilinaʻi no nā uila uila a me nā mea optoelectronic.


Huahana Huahana

Huahana Huahana

ʻO SemiceraSilicon Carbide Epitaxyua hana ʻia e hoʻokō i nā koi koʻikoʻi o nā noi semiconductor hou. Ma ka hoʻohana ʻana i nā ʻenehana ulu epitaxial holomua, hōʻoia mākou e hōʻike ana kēlā me kēia papa silicon carbide i ke ʻano crystalline maikaʻi loa, kūlike, a me ka liʻiliʻi liʻiliʻi. He mea koʻikoʻi kēia mau hiʻohiʻona no ka hoʻomohala ʻana i nā uila uila hana kiʻekiʻe, kahi i mea nui ai ka pono a me ka hoʻokele wela.

ʻO kaSilicon Carbide Epitaxykaʻina hana ma Semicera e hana i nā papa epitaxial me ka mānoanoa pololei a me ka mana doping, e hōʻoiaʻiʻo ana i ka hana maʻamau ma waena o nā ʻano mea hana. Pono kēia pae o ka pololei no nā noi i nā kaʻa uila, nā ʻōnaehana ikehu hou, a me nā kamaʻilio kiʻekiʻe, kahi e koʻikoʻi ai ka hilinaʻi a me ka pono.

Eia kekahi, ʻo SemiceraSilicon Carbide Epitaxyhāʻawi i ka hoʻonui ʻia ʻana o ka thermal conductivity a me ke kiʻekiʻe kiʻekiʻe o ka haʻihaʻi uila, e lilo ia i koho i makemake ʻia no nā mea hana e hana ana ma lalo o nā kūlana koʻikoʻi. Hāʻawi kēia mau waiwai i ka lōʻihi o ke ola ʻana o ka mīkini a me ka hoʻomaikaʻi ʻana i ka ʻōnaehana holoʻokoʻa holoʻokoʻa, ʻoi aku ka nui o ka mana kiʻekiʻe a me ka wela kiʻekiʻe.

Hāʻawi pū ʻo Semicera i nā koho hoʻoponopono noSilicon Carbide Epitaxy, e ʻae ana i nā hāʻina i hoʻopaʻa ʻia i kūpono i nā koi pono o ka mīkini. No ka noiʻi a i ʻole ka hana nui, ua hoʻolālā ʻia kā mākou papa epitaxial e kākoʻo i ka hanauna hou o nā mea hou semiconductor, e hiki ai i ka hoʻomohala ʻana i nā mea uila ʻoi aku ka ikaika, kūpono, a hilinaʻi.

Ma ka hoʻohui ʻana i ka ʻenehana ʻokiʻoki a me nā kaʻina hana hoʻomalu maikaʻi, hōʻoia ʻo Semicera i kā mākouSilicon Carbide EpitaxyʻAʻole kū wale nā ​​huahana akā ʻoi aku i nā kūlana ʻoihana. ʻO kēia kūpaʻa i ka maikaʻi e hana i kā mākou papa epitaxial i kumu kūpono no nā noi semiconductor kiʻekiʻe, e hoʻokaʻawale i ke ala no ka holomua o ka uila uila a me ka optoelectronics.

Nā mea

Paahana

Ka noiʻi

Dummy

Nā Kūlana Crystal

Polytype

4H

Ua hewa ka hoʻonohonoho ʻana o ka ʻili

<11-20 >4±0.15°

Nā Kūlana Uila

Dopant

n-ʻano Nitrogen

Kū'ē

0.015-0.025ohm·cm

Nā Kūlana Mechanical

Anawaena

150.0±0.2mm

mānoanoa

350±25 μm

Kūlana pālahalaha mua

[1-100]±5°

Ka lōʻihi pālahalaha mua

47.5±1.5mm

palahalaha lua

ʻAʻohe

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Kakaka

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

'Oka (AFM) mua (Si-maka)

Ra≤0.2nm (5μm*5μm)

Hoʻolālā

Micropipe mānoanoa

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metala haumia

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

ʻAno o mua

Imua

Si

Hoʻopau ʻili

Si-maka CMP

Nā ʻāpana

≤60ea/wafer (nui≥0.3μm)

NA

Nā ʻōpala

≤5ea/mm. Ka lōʻihi huila ≤Diameter

ʻO ka lōʻihi huila≤2*Diameter

NA

ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination

ʻAʻohe

NA

Nā ʻāpana lihi/indents/fracture/papa hex

ʻAʻohe

Nā wahi polytype

ʻAʻohe

ʻĀpana huila≤20%

ʻĀpana huila≤30%

Hōʻailona laser mua

ʻAʻohe

ʻAno o hope

Hoʻopau hope

C-maka CMP

Nā ʻōpala

≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena

NA

Nā pōʻino hope (nā ʻāpana lihi/indents)

ʻAʻohe

ʻōkalakala kua

Ra≤0.2nm (5μm*5μm)

Hōʻailona laser hope

1 mm (mai ka lihi luna)

Kaulana

Kaulana

Chamfer

Hoʻopili ʻia

Hoʻopili ʻia

Epi-mākaukau me ka hoʻopaʻa ʻumeke

Puke cassette nui-wafer

*Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD.

tech_1_2_size
SiC wafers

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