ʻO Silicon carbide kahi ʻano carbide synthetic me ka mole SiC. Ke hoʻoulu ʻia, hana maʻamau ka silica a me ke kalapona i nā wela kiʻekiʻe ma luna o 2000°C. Silicon carbide he theoretical density o 3.18g/cm3, he Mohs paakiki e hahai daimana, a me ka microhardness o 3300kg/mm3 ma waena o 9.2 a me 9.8. Ma muli o kona paʻakikī kiʻekiʻe a me ke kūpaʻa kiʻekiʻe, loaʻa iā ia nā hiʻohiʻona o ke kūpaʻa wela kiʻekiʻe a hoʻohana ʻia no nā ʻano ʻāpana like ʻole o ka ʻaʻahu, corrosion-resistant a me ka wela wela. He ʻano hou o ka ʻenehana seramika ʻaʻahu.
1、 Waiwai kemika.
(1) Palekana oxidation: Ke hoʻomehana ʻia ka mea silicon carbide i 1300 ° C i ka lewa, hoʻomaka ka papa pale silicon dioxide e hana ʻia ma ka ʻili o kāna aniani carbide silicon. Me ka mānoanoa o ka papa pale, ke hoʻomau nei ka carbide silicon kūloko i ka oxidize, i loaʻa i ka silicon carbide ke kūpaʻa oxidation maikaʻi. Ke piʻi ka mahana ma mua o 1900K (1627 ° C), hoʻomaka ka pōʻino o ke kiʻi pale silicon dioxide, a hoʻonui ʻia ka oxidation o ka silicon carbide, no laila ʻo 1900K ka mahana hana o ka silicon carbide i loko o kahi ea oxidizing.
(2) Acid a alkali resistance: ma muli o ke kuleana o ke kiʻiʻoniʻoni pale silicon dioxide, loaʻa i ka silicon carbide nā waiwai i ka hana o ke kiʻi pale silicon dioxide.
2、Ka waiwai kino a me ka mechanical.
(1) Density: Ua kokoke loa ka nui o nā kristal carbide like ʻole, i manaʻo ʻia he 3.20g / mm3, a ʻo ka nui o ka paʻi ʻana o ka silicon carbide abrasives ma waena o 1.2-1.6g / mm3, ma muli o ka nui o ka nui. hoʻohui ʻia ka nui o nā ʻāpana a me ke ʻano nui o nā ʻāpana.
(2) Paʻakikī: ʻO ka paʻakikī Mohs o ka silicon carbide he 9.2, ka micro-density o Wessler he 3000-3300kg / mm2, ʻo ka paʻakikī o Knopp he 2670-2815kg / mm, ʻoi aku ka kiʻekiʻe o ka abrasive ma mua o corundum, kokoke i ke daimana, cubic boron nitride a me ka boron carbide.
(3) Ka hoʻoili wela: ʻO nā huahana silicon carbide he kiʻekiʻe ka wela wela, ka liʻiliʻi hoʻonui wela wela, ke kūpaʻa haʻalulu kiʻekiʻe, a he mau mea refractory kiʻekiʻe.
3、 Nā waiwai uila.
| 'ikamu | Unite | ʻIkepili | ʻIkepili | ʻIkepili | ʻIkepili | ʻIkepili |
| RBsic(sic) | NBSiC | SSiC | RSiC | OSiC | ||
| maʻiʻo SiC | % | 85 | 76 | 99 | ≥99 | ≥90 |
| Maʻiʻo silika manuahi | % | 15 | 0 | 0 | 0 | 0 |
| Max wela lawelawe | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| ʻO ka mānoanoa | g/cm^3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| ʻO ka porosity wehe | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| ʻO ka ikaika piʻi 20 ℃ | Mpa | 250 | 160 | 380 | 100 | / |
| Ka ikaika kulou 1200 ℃ | Mpa | 280 | 180 | 400 | 120 | / |
| Modulus o ka elasticity 20 ℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus o ka elasticity 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Ka wela wela 1200 ℃ | W/mk | 45 | 19.6 | 100-120 | 36.6 | / |
| Coefficient o ka hoonui wela | K^-lx10^-8 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | kg/m^m2 | 2115 | / | 2800 | / | / |
