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Hāʻawi kā mākou huiKa uhi ʻana o SiCkaʻina hana ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika ke hana i ka wela kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe, nā molekala i waiho ʻia ma ka ʻili o kauhi ʻiamea, e hana ana i ka SIC pale pale.
ʻO nā hiʻohiʻona o nā poʻo ʻauʻau SiC penei:
1. Ka pale ʻana i ka ʻino: He maikaʻi ke kūpaʻa ʻana o nā mea SiC a hiki ke kū i ka ʻino ʻana o nā wai kemika like ʻole a me nā hoʻonā, a kūpono ia no nā ʻano hana kemika a me nā kaʻina hana lapaʻau.
2. Paʻa wela kiʻekiʻe:SiC nozzleshiki ke hoʻomau i ka paʻa o ke kūkulu ʻana i nā wahi wela kiʻekiʻe a kūpono i nā noi e koi ana i ka mālama wela kiʻekiʻe.
3. Hoʻopāpā like ʻole:Nozzle SiCmaikaʻi ka hoʻolālā ʻana i ka hana hoʻoheheʻe ʻana, hiki ke hoʻokō i ka hāʻawi like ʻana o ka wai a hōʻoia i ka uhi pono ʻia o ka wai lapaʻau ma ka ʻaoʻao.
4. Ke kū'ē kū'ē kiʻekiʻe: He kiʻekiʻe ka paʻakikī o ka mea SiC a me ke kūpaʻa a hiki ke kū i ka hoʻohana lōʻihi a me ka hakakā.
Hoʻohana nui ʻia nā poʻo ʻauʻau SiC i nā kaʻina mālama wai i ka hana semiconductor, ka hana kemika, ka uhi ʻana o ka ʻili, electroplating a me nā ʻoihana ʻoihana ʻē aʻe. Hiki iā ia ke hāʻawi i nā hopena paʻa paʻa, kūlike a hilinaʻi hoʻi e hōʻoia i ka maikaʻi a me ke kūlike o ka hana a me ka mālama ʻana.
Nā hiʻohiʻona nui
1. Kiʻekiʻe wela oxidation kū'ē:
ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.
2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.
3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.
4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.
Nā kiko'ī nui o ka CVD-SIC Coating
| Nā Waiwai SiC-CVD | ||
| Hoʻokumu Crystal | Māhele FCC β | |
| ʻO ka mānoanoa | g/cm ³ | 3.21 |
| ʻoʻoleʻa | ʻO ka paʻakikī o Vickers | 2500 |
| Ka nui o ka palaoa | μm | 2~10 |
| Maemae Kemika | % | 99.99995 |
| Kaha Wela | J·kg-1 ·K-1 | 640 |
| Mahana Sublimation | ℃ | 2700 |
| Ikaika Felexural | MPa (RT 4-point) | 415 |
| ʻO Young's Modulus | Gpa (4pt piko, 1300 ℃) | 430 |
| Hoʻonui wela (CTE) | 10-6K-1 | 4.5 |
| ʻO ke kau wela wela | (W/mK) | 300 |
