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ʻO kaʻO Silicon Carbide (SiC) Wafer Susceptorsno ka MOCVD mai semicera ua hoʻolālā ʻia no nā kaʻina hana epitaxial holomua, e hāʻawi ana i ka hana maikaʻi loa no nā mea ʻeluaʻO EpitaxyaSiC Epitaxynā noi. ʻO ke ala hou o Semicera e hōʻoiaʻiʻo ai i kēia mau susceptors i ka lōʻihi a me ka maikaʻi, e hāʻawi ana i ka paʻa a me ka pololei no nā hana hana koʻikoʻi.
Hana ʻia e kākoʻo i nā pono paʻakikī oMOCVD Susceptorʻōnaehana, he versatile kēia mau huahana, kūpono me nā mea lawe e like me PSS Etching Carrier, ICP Etching Carrier, a me RTP Carrier. ʻO kā lākou maʻalahi e kūpono iā lākou no nā ʻoihana ʻenehana kiʻekiʻe, me ka poʻe e hana pū anaLED EpitaxialSusceptor a me Monocrystalline Silicon.
Me nā hoʻonohonoho he nui, e komo pū me Barrel Susceptor a me Pancake Susceptor, he mea nui kēia mau wafer susceptors i ka ʻāpana photovoltaic, e kākoʻo ana i ka hana ʻana o Photovoltaic Parts. No nā mea hana semiconductor, ʻo ka hiki ke mālama i ka GaN ma nā kaʻina hana SiC Epitaxy i mea waiwai nui kēia mau susceptors no ka hōʻoia ʻana i nā huahana kiʻekiʻe ma waena o nā ʻano noi.
Nā hiʻohiʻona nui
1 .High maemae SiC uhi graphite
2. ʻOi aku ka maikaʻi o ka wela a me ke kūlike o ka wela
3. MaikaʻiUa uhi ʻia ʻo SiC crystalno ka ili pahee
4. Kiʻekiʻe ka lōʻihi e kū'ē i ka hoʻomaʻemaʻe kemika
ʻO nā kikoʻī nui o ka CVD-SIC Coatings:
SiC-CVD | ||
ʻO ka mānoanoa | (g/cc) | 3.21 |
Ka ikaika wiliwili | (Mpa) | 470 |
Hoʻonui wela | (10-6/K) | 4 |
ʻO ke kau wela wela | (W/mK) | 300 |
Hoʻopili a hoʻouna
Hiki ke hoolako:
10000 ʻāpana / ʻāpana i kēlā me kēia mahina
Puke a me ka lawe ʻana:
Hoʻopili: Kūʻai maʻamau & ikaika
ʻeke poli + pahu + pahu pahu + pallet
Awa:
Ningbo/Shenzhen/Shanghai
Ka manawa o waena o ka hoʻomaka a i ka wā pau:
Nui (Nā ʻāpana) | 1-1000 | >1000 |
Est. Manawa(lā) | 30 | E kūkākūkā ʻia |