ʻO Silicon-Impregnated Silicon Carbide (SiC) hoe a me ka mea lawe Wafer

Kiʻi Hōʻike ʻia ʻo Silicon-Impregnated Silicon Carbide (SiC) hoe a me ka Wafer Carrier

ʻO ka wehewehe pōkole:

ʻO Silicon-Impregnated Silicon Carbide (SiC) Paddle a me ka Wafer Carrier he mea hana kiʻekiʻe i hoʻokumu ʻia e ka hoʻokomo ʻana i ka silika i loko o kahi matrix carbide silicon recrystallized a me ka mālama kūikawā. Hoʻohui kēia mea i ka ikaika kiʻekiʻe a me ke kiʻekiʻe o ka mahana wela o ka recrystallized silicon carbide me ka hoʻonui ʻana i ka hana o ka infiltration silicon, a hōʻike i ka hana maikaʻi loa ma lalo o nā kūlana koʻikoʻi. Hoʻohana nui ʻia ia ma ke kahua o ka mālama wela semiconductor, ʻoi aku hoʻi i nā kaiapuni e koi ana i ka wela kiʻekiʻe, ke kiʻekiʻe kiʻekiʻe a me ke kūpaʻa ʻaʻahu kiʻekiʻe, a he mea kūpono no ka hana ʻana i nā ʻāpana mālama wela i ke kaʻina hana semiconductor.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Nānā Huahana

ʻO kaʻO Silicon-Impregnated Silicon Carbide (SiC) hoe a me ka mea lawe Waferua hana ʻia e hoʻokō i nā koi koi o nā noi hoʻoili wela semiconductor. Hana ʻia mai ka SiC maʻemaʻe kiʻekiʻe a hoʻonui ʻia ma o ka impregnation silicon, hāʻawi kēia huahana i kahi hui kūʻokoʻa o ka hana wela kiʻekiʻe, maikaʻi loa ka thermal conductivity, corrosion resistance, a me ka ikaika mechanical outstanding.

Ma ka hoʻohui ʻana i ka ʻepekema waiwai kiʻekiʻe me ka hana pololei, hōʻoia kēia hopena i ka hana ʻoi aku ka maikaʻi, hilinaʻi, a me ka lōʻihi no nā mea hana semiconductor.

Nā mea nui

1.Kū'ē Kūlana Kiʻekiʻe

Me kahi helu heheʻe ma mua o 2700°C, paʻa maoli nā mea SiC ma lalo o ka wela nui. Hoʻonui hou ka Silicon impregnation i ko lākou kūpaʻa wela, e ʻae iā lākou e kū i ka lōʻihi o ka hoʻolaha ʻana i nā mahana kiʻekiʻe me ka hoʻonāwaliwali ʻole o ka hana a i ʻole ka hoʻohaʻahaʻa hana.

2.ʻOi aku ka maikaʻi o ka wela wela

ʻO ka conductivity thermal kūikawā o ka silicon-impregnated SiC e hōʻoia i ka hāʻawi ʻana i ka wela, e hōʻemi ana i ke koʻikoʻi wela i ka wā o ka hana koʻikoʻi. Hoʻopaneʻe kēia waiwai i ke ola o nā mea hana a hoʻemi i ka manawa haʻahaʻa o ka hana ʻana, e lilo ia i mea kūpono no ka hana wela wela.

3.ʻO ka ʻoki ʻana a me ka pale ʻana

Hoʻokumu maoli ʻia kahi papa silicon oxide paʻa ma ka ʻili, e hāʻawi ana i ke kūpaʻa kūʻokoʻa i ka oxidation a me ka corrosion. Mālama kēia i ka hilinaʻi lōʻihi i nā kaiapuni hana paʻakikī, e pale ana i nā mea a me nā mea e pili ana.

4.ʻO ka ikaika Mechanical kiʻekiʻe a me ka pale ʻana i ka lole

Hōʻike ʻo Silicon-impregnated SiC i ka ikaika compressive maikaʻi loa a me ke kūpaʻa ʻana, e mālama ana i kona kūpaʻa ʻana ma lalo o nā kūlana kiʻekiʻe. Hoʻemi kēia i ka pilikia o ka pōʻino pili i ka ʻaʻahu, e hōʻoia ana i ka hana mau ʻana i nā pōʻai hoʻohana lōʻihi.

Nā kikoʻī

Inoa Huahana	SC-RSiC-Si
Mea waiwai	Silicon Impregnation Silicon Carbide Compact (ka maʻemaʻe kiʻekiʻe)
Nā noi	Nā Māhele Hoʻomaʻamaʻa Wela Semiconductor, Nā Mea Hana Hana Semiconductor
Palapala hoʻouna	Kino hoʻoheheʻe ʻia (Sintered body)

Huina			Waiwai Mechanical	ʻŌpio Modulus (GPa)	Kulou ikaika (MPa)
Huina (vol%)	α-SiC	α-SiC	RT	370	250
Huina (vol%)	82	18	800°C	360	220
ʻOi aku ka nui (kg/m³)	3.02 x 10³		1200°C	340	220
Ka wela wela°C	1350		Ka ratio o Poisson	0.18(RT)
Waiwai Thermal	ʻO ka hoʻoili wela (W/(m· K))	Kaha Wela Kūikawā (kJ/(kg·K))	Coefficient o ka hoonui wela (1/K)
RT	220	0.7	RT~700°C	3.4 x 10^-6
700°C	60	1.23	700~1200°C	4.3 x10^-6

Maʻiʻo haumia ((ppm)

ʻElemu

Ka helu maʻiʻo

<0.5

<0.1

0.3

<0.1

<0.3

Nā noi

▪ʻO ka hana wela semiconductor:He kūpono no nā kaʻina hana e like me ka chemical vapor deposition (CVD), ka ulu ʻana o ka epitaxial, a me ka annealing, kahi e koʻikoʻi ai ka mālama ʻana i ka wela a me ka lōʻihi o nā mea.

▪ʻO nā mea lawe Wafer a me nā hoe:Hoʻolālā ʻia e paʻa a lawe i nā wafers i ka wā o ka mālama wela wela.

▪Kaiapuni hana loa: He kūpono no nā hoʻonohonoho e koi ana i ke kū'ē i ka wela, ka ʻike kemika, a me ke koʻikoʻi mechanical.

ʻO nā pono o ka Silicon-Impregnated SiC

ʻO ka hui pū ʻana o ka silicon carbide maʻemaʻe kiʻekiʻe a me ka ʻenehana impregnation silicon kiʻekiʻe e hāʻawi i nā pono hana like ʻole:

▪pololei:Hoʻonui i ka pololei a me ka mana o ka hana semiconductor.

▪Paʻa:Hoʻopaʻa i nā kaiapuni paʻakikī me ka ʻole o ka hoʻokō ʻana i ka hana.

▪Ka lōʻihi:Hoʻonui i ke ola lawelawe o nā lako hana semiconductor.

▪Pono:Hoʻonui i ka huahana ma ka hōʻoia ʻana i nā hopena hilinaʻi a kūlike.

No ke aha e koho ai i kā mākou Silicon-Impregnated SiC Solutions?

At Semicera, mākou kūikawā i ka hāʻawiʻana i nā hoʻonā hana kiʻekiʻe i kūpono i nā pono o nā mea hana semiconductor. ʻO kā mākou Silicon-Impregnated Silicon Carbide Paddle a me ka Wafer Carrier e hoʻāʻo ikaika a hōʻoia i ka maikaʻi e hoʻokō i nā kūlana ʻoihana. Ma ke koho ʻana iā Semicera, loaʻa iā ʻoe ke komo i nā mea ʻokiʻoki i hoʻolālā ʻia e hoʻomaikaʻi i kāu kaʻina hana hana a hoʻonui i kāu hiki ke hana.

Nā Kūlana ʻenehana

▪Huina Mea:Kiʻekiʻe-maʻemaʻe silika carbide me ka silika impregnation.

▪Kaulana Mahana Hana:A hiki i 2700°C.

▪ ʻO ka wela wela:Kiʻekiʻe loa no ka hāʻawi like ʻana i ka wela.

▪Nā waiwai kū'ē:Oxidation, corrosion, a me ka lole-pale.

▪Nā noi:Hoʻohālikelike me nā ʻōnaehana hoʻoili wela semiconductor like ʻole.

ʻO ka hana CNN, hoʻomaʻemaʻe kemika, ka uhi CVD

Kāhea iā mā˚ou

Mākaukau e hoʻokiʻekiʻe i kāu kaʻina hana semiconductor? HoʻopiliSemicerai kēia lā e aʻo hou e pili ana i kā mākou Silicon-Impregnated Silicon Carbide Paddle a me ka Wafer Carrier.

▪leka uila: sales01@semi-cera.com/sales05@semi-cera.com

▪Kelepona: +86-0574-8650 3783

▪Wahi:No.1958 Jiangnan Road, Ningbo High tech, Zone, Zhejiang Province, 315201, Kina

Mua: ʻO ka waʻa PECVD Graphite Isostatic

Aʻe: Maʻemaʻe kiʻekiʻe CVD Silicon Carbide maka