SiC Bonded Si3N4 Ceram panel

ʻO ka wehewehe pōkole:

ʻO WeiTai Energy Technology Co., Ltd. kahi mea hoʻolako alakaʻi kūikawā i ka wafer a me nā mea hoʻohana semiconductor holomua.Hoʻolaʻa mākou i ka hāʻawi ʻana i nā huahana kiʻekiʻe, hilinaʻi, a me nā mea hou i ka hana semiconductor,ʻoihana photovoltaica me nā kahua ʻē aʻe e pili ana.

Loaʻa i kā mākou laina huahana nā huahana graphite i uhi ʻia ʻo SiC/TaC a me nā huahana seramika, e hoʻopuni ana i nā mea like ʻole e like me ka silicon carbide, silicon nitride, a me ka alumini oxide a me nā mea ʻē aʻe.

Ma keʻano he mea hoʻolako hilinaʻi, hoʻomaopopo mākou i ke koʻikoʻi o nā mea hoʻohana i ka hana hana, a ua kūpaʻa mākou i ka hāʻawi ʻana i nā huahana i kūpono i nā kūlana kiʻekiʻe loa e hoʻokō ai i nā pono o kā mākou mea kūʻai.


Huahana Huahana

Huahana Huahana

ʻO ka Silicon nitride i hui pū ʻia me ka silicon carbide kiln he mau hiʻohiʻona o ka ikaika wela kiʻekiʻe, maikaʻi thermal shock resistance, maʻalahi deformation, oxidation resistance, corrosion resistance, maikaʻi thermal conductivity a pēlā aku.

Lako Kiln (5)

Nā hōʻailona hana nui

'ikamu

Papa kuhikuhipuu ahi

Kiln kikoʻī

Papa kuhikuhi o ka huahana i hoʻohālikelike ʻia

ʻIke ʻia ka porosity%

<16

<16

<14

ʻAno nuig/cm3

2 2.65

2 2.65

2 2.68

Ka ikaika compressive ma ka lumi welaMPa

2 160

2 170

2 180

Ka ikaika kulou ma ka lumi wela1400X MPa

2 40

2 45

2 45

Ka ikaika kulou wela wela1400r MPa

2 50

2 50

2 50

Coefficient o ka hoonui wela110CTCxioVC

<4.18

<4.18

<4.18

ʻO ke kau wela wela1100C

216

2 16

216

Nā mea hoʻopaʻa°C

1800

1800

1800

0.2 MPa ʻO ka mahana palupalu ma lalo o ka ukanaX:)

1600

1600

> 1700

ʻO ka wela hana kiʻekiʻe°C

1550

1550

1550

Hoʻohana nui ʻia nā huahana i ka huila wili seramika, nā huahana alumini kiʻekiʻe, ka pōlele porcelain aluminika, ka kiln ʻoihana, ka seramika uila, ka porcelain uila uila kiʻekiʻe, nā mea maʻemaʻe, ka porcelain i kēlā me kēia lā, nitride alloy a me nā seramics foam a me nā ʻoihana ʻē aʻe.

Lako Kiln (7)

  • Mua:
  • Aʻe: