ʻO SiC pale wela kiʻekiʻe i hui pū ʻia me ka papa hoʻoheheʻe Si3N4

ʻO ka wehewehe pōkole:

ʻO WeiTai Energy Technology Co., Ltd. kahi mea hoʻolako alakaʻi kūikawā i ka wafer a me nā mea hoʻohana semiconductor holomua.Hoʻolaʻa mākou i ka hāʻawi ʻana i nā huahana kiʻekiʻe, hilinaʻi, a me nā mea hou i ka hana semiconductor, ʻoihana photovoltaic a me nā ʻoihana ʻē aʻe e pili ana.

Loaʻa i kā mākou laina huahana nā huahana graphite i uhi ʻia ʻo SiC/TaC a me nā huahana seramika, e hoʻopuni ana i nā mea like ʻole e like me ka silicon carbide, silicon nitride, a me ka alumini oxide a me nā mea ʻē aʻe.

Ma keʻano he mea hoʻolako hilinaʻi, hoʻomaopopo mākou i ke koʻikoʻi o nā mea hoʻohana i ka hana hana, a ua kūpaʻa mākou i ka hāʻawiʻana i nā huahana i kūpono i nā kūlana kiʻekiʻe loa e hoʻokō i nā pono o kā mākou mea kūʻai.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

ʻO ka Silicon nitride i hui pū ʻia me ka silicon carbide kiln he mau hiʻohiʻona o ka ikaika wela kiʻekiʻe, maikaʻi thermal shock resistance, maʻalahi deformation, oxidation resistance, corrosion resistance, maikaʻi thermal conductivity a pēlā aku.

Nā hōʻailona hana nui

'ikamu	Papa kuhikuhipuu ahi	Kiln kikoʻī	Papa kuhikuhi o ka huahana i hoʻohālikelike ʻia
ʻIke ʻia ka porosity（%）	<16	<16	<14
ʻAno nui（g/cm3）	2 2.65	2 2.65	2 2.68
Ka ikaika compressive ma ka lumi wela（MPa）	2 160	2 170	2 180
Ka ikaika kulou ma ka lumi wela（1400X：） MPa	2 40	2 45	2 45
Ka ikaika kulou wela wela（1400r） MPa	2 50	2 50	2 50
Coefficient o ka hoonui wela（110CTC）xioVC	<4.18	<4.18	<4.18
ʻO ke kau wela wela（1100C）	216	2 16	216
Nā mea hoʻopaʻa（°C ）	1800	1800	1800
0.2 MPa Hoʻomaʻamaʻa wela ma lalo o ka ukana（X：）	1600	1600	> 1700
ʻO ka wela hana kiʻekiʻe（°C）	1550	1550	1550

Hoʻohana nui ʻia nā huahana i ka huila wili seramika, nā huahana alumini kiʻekiʻe, ka pōlele porcelain aluminika, ka kiln ʻoihana, ka seramika uila, ka porcelain uila uila kiʻekiʻe, nā mea hoʻomaʻemaʻe, ka porcelain i kēlā me kēia lā, nitride alloy a me nā seramics foam a me nā ʻoihana ʻē aʻe.