ʻO ke kia carbide silikoni i hoʻopaʻa ʻia

ʻO ka wehewehe pōkole:

ʻO Si3N4 i hoʻopaʻa ʻia ʻo SiC ma ke ʻano he mea refractory ʻano hou, hoʻohana nui ʻia. ʻO 1400 C ka mahana e noi ai.-oxidation, kiʻekiʻe corrosion kū'ē, aahu-kū'ē, kiʻekiʻe kulou ikaika. Hiki ke pale aku i ka corrosion a me ka wili ana, aole haumia a me ka hookeai wela conduction i loko o ka hooheheeia metala e like me AL, Pb, Zn, Cu ect.


Huahana Huahana

Huahana Huahana

描述

Silicon nitride i hoʻopaʻa ʻia i ka silikon carbide

ʻO Si3N4 i hoʻopaʻa ʻia ʻo SiC ceramic refractory material, ua hui pū ʻia me ka pauka maikaʻi SIC maʻemaʻe kiʻekiʻe a me ka pauka Silicon, ma hope o ka hoʻoheheʻe ʻana i ka papa, hoʻopili ʻia ka hopena ma lalo o 1400 ~ 1500 ° C. I ka wā o ka sintering, e hoʻopiha ana i ka Nitrogen maʻemaʻe kiʻekiʻe i loko o ka umu, a laila e hana ke silika me ka Nitrogen a hoʻohua iā Si3N4, No laila ʻo Si3N4 i hoʻopaʻa ʻia ʻo SiC mea i haku ʻia me ka silicon nitride (23%) a me ka silicon carbide (75%) ma ke ʻano kumu kumu. , hui pū ʻia me nā mea kūlohelohe, a hana ʻia e ka hui ʻana, extrusion a ninini ʻana paha, a laila hana ʻia ma hope o ka maloʻo ʻana a me ka nitrogenization.

 

特点

Nā hiʻohiʻona a me nā pono:

1.High mahana hoʻomanawanui
2.High thermal conductivity a me ka haʻalulu kū'ē
3.High ikaika mechanical a me ka abrasion
4.Excellent ikehu pono a me ka corrosion kū'ē

Hāʻawi mākou i nā ʻāpana seramika NSiC kiʻekiʻe a me ka pololei i hana ʻia e

1. Slip hoolei
2.Extruding
3.Uni Axial Pressing
4.Isostatic Pressing

Pepa ʻIke Mea

>Ka Hui Kemika ʻO Sic 75%
Si3N4 ≥23%
Kuokoa Si 0%
ʻAno nui (g/cm3) 2.702.80
ʻIke ʻia ka porosity (%) 1215
Piʻo ikaika ma 20 ℃(MPa) 180190
Piʻo ikaika ma 1200 ℃(MPa) 207
Piʻo ikaika ma 1350 ℃(MPa) 210
Ka ikaika compressive ma 20 ℃(MPa) 580
Ka wela wela ma 1200 ℃ (w/mk) 19.6
Koefficient hoʻonui wela ma1200 ℃(x 10-6/C) 4.70
Ke kū'ē i ka ha'alulu wela Maikaʻi
Max. wela (℃) 1600

Kahi hana Semicera Kahi hana Semicera 2 mīkini lako ʻO ka hana CNN, hoʻomaʻemaʻe kemika, ka uhi CVD ʻO kā mākou lawelawe


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