Tantalum carbide (TaC)mea he super-kiʻekiʻe wela e kū'ē i ka ceramic mea me ka pono o kiʻekiʻe hehee ai wahi, kiʻekiʻe paakiki, maikai kemika paʻa, ikaika uila a me ka thermal conductivity, etc.ka uhi ʻana o TaChiki ke hoʻohana ʻia e like me ka ablation-resistant coating, oxidation-resistant coating, a me ka lole pale pale, a hoʻohana nui ʻia i ka pale wela aerospace, ke kolu o ka hanauna semiconductor hoʻokahi kristal ulu, ikehu uila a me nā kula ʻē aʻe.
Kaʻina hana:
Tantalum carbide (TaC)He ʻano ʻano mea hana seramika ultra-kiʻekiʻe me ka maikaʻi o ka helu heheʻe kiʻekiʻe, ka paʻakikī kiʻekiʻe, ke kūpaʻa kemika maikaʻi, ka uila ikaika a me ka conductivity thermal. No laila,ka uhi ʻana o TaChiki ke hoʻohana ʻia e like me ka ablation-resistant coating, oxidation-resistant coating, a me ka lole pale pale, a hoʻohana nui ʻia i ka pale wela aerospace, ke kolu o ka hanauna semiconductor hoʻokahi kristal ulu, ikehu uila a me nā kula ʻē aʻe.
ʻO nā hiʻohiʻona koʻikoʻi o nā uhi:
Hoʻohana mākou i ke ʻano slurry-sintering e hoʻomākaukau aiʻO nā pale TaCo nā mānoanoa like ʻole ma nā substrate graphite o nā ʻano nui like ʻole. ʻO ka mua, ua hoʻonohonoho ʻia ka pauka maʻemaʻe kiʻekiʻe me ke kumu Ta a me ke kumu C me ka dispersant a me ka binder e hana i kahi slurry precursor paʻa a paʻa. I ka manawa like, e like me ka nui o nā ʻāpana graphite a me nā koi mānoanoa oka uhi ʻana o TaC, ua hoʻomākaukauʻia ka hoʻopili muaʻana ma o ka pīpīʻana, ka nininiʻana, ka infiltration a me nāʻano'ē aʻe. ʻO ka mea hope loa, ua wela ia ma luna o 2200 ℃ i loko o kahi kaʻawale e hoʻomākaukau ai i kahi ʻano like, paʻa, hoʻokahi-phase, a me ka maikaʻi-crystalline.ka uhi ʻana o TaC.
ʻO nā hiʻohiʻona koʻikoʻi o nā uhi:
ʻO ka mānoanoa oka uhi ʻana o TaCaia ma kahi o 10-50 μm, ulu nā hua i kahi ʻano manuahi, a ua haku ʻia ʻo TaC me kahi hoʻolālā cubic i hoʻohālikelike ʻia i ka maka, me ka ʻole o nā haumia ʻē aʻe; paʻa ka uhi, paʻa ka hale, a kiʻekiʻe ka crystallinity.ka uhi ʻana o TaChiki ke hoʻopiha i nā pores ma ka ʻili o ka graphite, a ua hoʻopaʻa ʻia i ka graphite matrix me ka ikaika hoʻopaʻa kiʻekiʻe. ʻO ka lakio o Ta a C i ka uhi ʻana kokoke i 1:1. ʻO ka GDMS purity detection reference maʻamau ASTM F1593, ʻoi aku ka nui o ka haumia ma mua o 121ppm. ʻO ka helu helu mean deviation (Ra) o ka ʻaoʻao uhi ʻo 662nm.
Nā noi maʻamau:
GaN aSiC epitaxialʻO nā ʻāpana reactor CVD, me nā mea lawe wafer, nā kīʻaha ukali, nā poʻo ʻauʻau, nā uhi o luna a me nā susceptors.
ʻO SiC, GaN a me AlN nā mea ulu kristal, me nā crucibles, nā mea paʻa aniani hua, nā alakaʻi kahe a me nā kānana.
ʻO nā mea ʻenehana, me nā mea hoʻomehana resistive, nā nozzles, nā apo pale a me nā mea hoʻopaʻa paʻa.
Nā hiʻohiʻona nui:
Paʻa wela kiʻekiʻe ma 2600 ℃
Hāʻawi i ka palekana kūlana paʻa i nā wahi kemika koʻikoʻi o H2, NH3, SiH4a me Si mahu
He kūpono no ka hana nui me nā pōkole hana pōkole.
