Nā pono
Ke kū'ē kū'ē i ka wela wela
Kūleʻa ʻino maikaʻi loa
Kūleʻa maikaʻi abrasion
Kiʻekiʻe coefficient o ka wela conductivity
Lubricity pono'ī, haʻahaʻa haʻahaʻa
Paʻakiki kiʻekiʻe
Hoʻolālā maʻamau.
Nā noi
- Kūleʻa kūʻokoʻa: bushing, plate, sandblasting nozzle, cyclone lining, grinding barrel, etc ...
-Kiʻekiʻe Temperature Field: siC Slab, Quenching Furnace Tube, Radiant Tube, crucible, Heating Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC boat, Kiln Car Structure, Setter, etc.
-Silicon Carbide Semiconductor: SiC wafer boat, sic chuck, sic hoe, sic cassette, sic diffusion tube, wafer fork, suction plate, guideway, etc.
-Silicon Carbide Seal Field: nā ʻano like ʻole o ke apo sealing, bearing, bushing, etc.
-Photovoltaic Field: Cantilever Paddle, Grinding Barrel, Silicon Carbide Roller, etc.
-Ke kahua pākaukau Lithium
Na Waiwai Kino o SiC
| Waiwai | Waiwai | ʻano hana |
| ʻO ka mānoanoa | 3.21 g/cc | Piko-lele a me ke ana |
| wela kūikawā | 0.66 J/g °K | Pulsed laser flash |
| Ka ikaika wiliwili | 450 MPa560 MPa | 4 piko piko, RT4 piko piko, 1300° |
| ʻOoleʻa haʻihaʻi | 2.94 MPa m1/2 | Microindentation |
| ʻoʻoleʻa | 2800 | ʻO Vicker, 500g ukana |
| Elastic ModulusYoung's Modulus | 450 GPa430 GPa | 4 pt piko, RT4 pt piko, 1300 °C |
| Ka nui o ka palaoa | 2 – 10 µm | SEM |
Na waiwai wela o SiC
| ʻO ka hoʻoili wela | 250 W/m °K | ʻO ke ala uila laser, RT |
| Hoʻonui wela (CTE) | 4.5 x 10-6 °K | ʻO ka mahana lumi i 950 °C, silica dilatometer |
Nā ʻāpana ʻenehana
| 'ikamu | Unite | ʻIkepili | ||||
| RBSiC(SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| maʻiʻo SiC | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Maʻiʻo silika manuahi | % | 15 | 0 | 0 | 0 | 0 |
| Max wela lawelawe | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| ʻO ka mānoanoa | g/cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| ʻO ka porosity wehe | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| ʻO ka ikaika piʻi 20 ℃ | Мpa | 250 | 160 | 380 | 100 | / |
| Ka ikaika kulou 1200 ℃ | Мpa | 280 | 180 | 400 | 120 | / |
| Modulus o ka elasticity 20 ℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus o ka elasticity 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Ka wela wela 1200 ℃ | W/mK | 45 | 19.6 | 100-120 | 36.6 | / |
| Coefficient o ka hoonui wela | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
ʻO ka CVD silicon carbide coating ma ka ʻaoʻao o waho o ka recrystallized silicon carbide ceramic huahana hiki ke hōʻea i kahi maʻemaʻe ma mua o 99.9999% e hoʻokō i nā pono o nā mea kūʻai aku i ka ʻoihana semiconductor.
